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Infineon Technologies AG SPW20N60C3 MOSFETs N-Ch 650V 20.7A TO247-3 CoolMOS C3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	SPW20N60C3		788			1 $5.76 10 $5.53 100 $2.59 1000 $2.4 10000 $2.4	Buy Now

SPW20N60C3 20N60C3 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
20n60c3 Abstract: 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.19 Ω	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 sp*20n60c3 SDP06S60 transistor 20N60c3 506V
20n60c3 Abstract: transistor 20N60c3 diode marking G36 Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 transistor 20N60c3 diode marking G36
20N60C3 equivalent Abstract: 20N60C3 SPW20N60C3 tp 2116 20n60c TO-247 SDP06S60 Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 equivalent 20N60C3 SPW20N60C3 tp 2116 20n60c TO-247 SDP06S60
20n60c3 Abstract: 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3 Text: SPW20N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A •=High peak current capability	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPW20N60C3 SPD06S60 transistor 20N60c3 131a SPW20N60C3 20N60C3
20N60C3 Abstract: SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3 Text: SPW20N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20N60C3 SPD06S60 SPW20N60C3 sp*20n60c3 transistor 20N60c3
SPW20N60C3 Abstract: transistor 20N60c3 Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 SPW20N60C3 transistor 20N60c3
diode marking G36 Abstract: SPW20N60C3 20N60C3 SPW20N60C3 20n60c3 Text: SPW20N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.19 Ω • Extreme dv/dt rated ID 20.7 A • High peak current capability	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 diode marking G36 SPW20N60C3 20N60C3 SPW20N60C3 20n60c3
20n60c3 Abstract: 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60 Text: SPW20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability	Original	PDF	SPW20N60C3 P-TO247 Q67040-S4406 20N60C3 20n60c3 20N60C3 equivalent SPD06S60 diode marking G36 SPW20N60C3 SPW20N60