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    SQD2 Price and Stock

    Vishay Siliconix SQD25N15-52_GE3

    MOSFET N-CH 150V 25A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD25N15-52_GE3 Digi-Reel 5,283 1
    • 1 $4.8
    • 10 $3.179
    • 100 $4.8
    • 1000 $1.74144
    • 10000 $1.74144
    		Buy Now
    SQD25N15-52_GE3 Cut Tape 5,283 1
    • 1 $4.8
    • 10 $3.179
    • 100 $4.8
    • 1000 $1.74144
    • 10000 $1.74144
    		Buy Now
    SQD25N15-52_GE3 Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.7325
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    New Advantage Corporation SQD25N15-52_GE3 34,000 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.9289
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    Vishay Siliconix SQD25N06-22L_GE3

    MOSFET N-CH 60V 25A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD25N06-22L_GE3 Digi-Reel 3,760 1
    • 1 $2.24
    • 10 $1.433
    • 100 $2.24
    • 1000 $0.71437
    • 10000 $0.71437
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    SQD25N06-22L_GE3 Cut Tape 3,760 1
    • 1 $2.24
    • 10 $1.433
    • 100 $2.24
    • 1000 $0.71437
    • 10000 $0.71437
    		Buy Now
    SQD25N06-22L_GE3 Reel 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.66122
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    Vishay Siliconix SQD23N06-31L_GE3

    MOSFET N-CH 60V 23A TO252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SQD23N06-31L_GE3 Cut Tape 3,440 1
    • 1 $2.38
    • 10 $1.531
    • 100 $2.38
    • 1000 $0.76874
    • 10000 $0.76874
    		Buy Now
    SQD23N06-31L_GE3 Digi-Reel 3,440 1
    • 1 $2.38
    • 10 $1.531
    • 100 $2.38
    • 1000 $0.76874
    • 10000 $0.76874
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    SQD23N06-31L_GE3 Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.66825
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    New Advantage Corporation SQD23N06-31L_GE3 2,000 1
    • 1 -
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    • 1000 -
    • 10000 $0.8635
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    TT electronics / BI Technologies P170S-QD25BR5K

    PANEL ROTARY POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P170S-QD25BR5K Tray 5,040
    • 1 -
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    • 100 -
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    • 10000 $1.3029
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    Sager P170S-QD25BR5K 630
    • 1 -
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    • 100 -
    • 1000 $1.29
    • 10000 $1.29
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    TT electronics / BI Technologies P170S-QD20AR5K

    PANEL ROTARY POTENTIOMETER
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P170S-QD20AR5K Tray 5,040
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.3029
    		Buy Now
    Sager P170S-QD20AR5K 630
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.29
    • 10000 $1.29
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    Find more SQD2 price and stock on Findchips.com

    SQD2 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQD200A40 SanRex Transistor Module Original PDF
    SQD200A40 SanRex TRANSISTOR MODULE Original PDF
    SQD200A40 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    SQD200A60 SanRex Transistor Module Original PDF
    SQD200A60 SanRex TRANSISTOR MODULE Original PDF
    SQD200A60 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    SQD23N06-31L-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 23A TO252 Original PDF
    SQD23N06-31L_T4GE3 Vishay Siliconix MOSFET N-CH 60V 23A TO252AA Original PDF
    SQD23N06-31L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 23A TO252 Original PDF
    SQD25N06-22L-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 25A TO252 Original PDF
    SQD25N06-22L_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 25A TO252 Original PDF
    SQD25N06-22L_T4GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 25A TO252AA Original PDF
    SQD25N15-52-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 25A TO252 Original PDF
    SQD25N15-52-T4_GE3 Vishay Siliconix MOSFET N-CH 150V 25A TO252AA Original PDF
    SQD25N15-52_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 150V 25A TO252 Original PDF

    SQD2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SQD25N06-22L-GE3

    Abstract: No abstract text available
    Text: SQD25N06-22L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQD25N06-22L AEC-Q101 2002/95/EC O-252 SQD25N06-22L-GE3 18-Jul-08 SQD25N06-22L-GE3

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 O-252 SQD25N15-52-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    37021

    Abstract: 4802 c 4692 AN609 68708
    Text: SQD25N15-52_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SQD25N15-52 AN609, 09-May-08 37021 4802 c 4692 AN609 68708

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQD25N06-22L Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQD25N06-22L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQD23N06-31L Vishay Siliconix N-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SQD23N06-31L 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQD25N06-22L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.022 RDS(on) () at VGS = 4.5 V 0.033 ID (A)


    Original     		PDF SQD25N06-22L AEC-Q101 2002/95/EC O-252 SQD25N06-22L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SOD200

    Abstract: SQD200A40 SQD200A60
    Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V


    Original     		PDF SQD200A40/60 E76102 SQD200A 95max IC200A, 62max 110Tab 30max VCEX400/600V OD200A SOD200 SQD200A40 SQD200A60

    SQD25N15-52-GE3

    Abstract: C4825
    Text: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) (Ω) at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 2002/95/EC SQD25N15-52-GE3 18-Jul-08 SQD25N15-52-GE3 C4825

    Untitled

    Abstract: No abstract text available
    Text: SQD23N06-31L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.045 ID (A)


    Original     		PDF SQD23N06-31L 2002/95/EC AEC-Q101 O-252 SQD23N06-31L-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: SQD23N06-31L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQD23N06-31L AN609, 8741m 4727m 0317m 8651u 4087m 3729m 6723m 4088m

    Untitled

    Abstract: No abstract text available
    Text: SQD25N06-22L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.022 RDS(on) () at VGS = 4.5 V 0.033 ID (A)


    Original     		PDF SQD25N06-22L AEC-Q101 2002/95/EC O-252 O-252 SQD25N06-22L-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQD23N06-31L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 60 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.31 ID (A) Configuration RoHS • Package with Low Thermal Resistance


    Original     		PDF SQD23N06-31L AEC-Q101 O-252 O-252 SQD23N06-31L-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration


    Original     		PDF SQD25N15-52 AEC-Q101 2002/95/EC O-252 O-252 SQD25N15-52-GE3 11-Mar-11

    SQD25N15-52-GE3

    Abstract: No abstract text available
    Text: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free 150 RDS(on) (Ω) at VGS = 10 V • TrenchFET Power MOSFET 0.0052 ID (A) Configuration Single COMPLIANT AEC-Q101 RELIABILITY D TO-252


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 SQD25N15-52-GE3 18-Jul-08 SQD25N15-52-GE3

    Darlington 40A

    Abstract: SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor SQD200A40 380 darlington
    Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 M SQD200A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for


    Original     		PDF SQD200A40/60 E76102 SQD200A 400/600V SQD200A40 SQD200A60 SQD200A40 Darlington 40A SQD200A60 300V switching transistor Application sqd200a60 darlington 8A 300V darlington power transistor diode 300v 200A sit transistor 380 darlington

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25 Configuration


    Original     		PDF SQD25N15-52 AEC-Q101 2002/95/EC O-252 O-252 SQD25N15-52-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 150 RDS(on) () at VGS = 10 V 0.052 ID (A) • TrenchFET Power MOSFET 25


    Original     		PDF SQD25N15-52 AEC-Q101 2002/95/EC O-252 O-252 SQD25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    A 22L

    Abstract: No abstract text available
    Text: SQD25N06-22L Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualifiedd


    Original     		PDF SQD25N06-22L AEC-Q101 2002/95/EC O-252 O-252 SQD25N06-22L-GE3 18-Jul-08 A 22L

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 SQD25N15-52-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD25N06-22L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQD25N06-22L AN609, 2571m 8896m 7954m 0579m 6716m 5318u 0862m 4864m

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52 www.vishay.com Vishay Siliconix Automotive N-Channel 150 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 150 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.052 ID (A) • 100 % Rg and UIS Tested


    Original     		PDF SQD25N15-52 AEC-Q101 O-252 SQD25N15-52-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    QF30AA60

    Abstract: QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60
    Text: TRANSISTOR MODULE SQD200A40/60 UL;E76102 （M） 95max 80±0.25 23 23 ● IC＝200A, 62max 48±0.25 15 （Applications） Motor Control（VVVF）, AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 4ｰφ5.5 1 2 3 C1 E1 C1 B2 E2 VCEX＝400/600V


    Original     		PDF SQD200A40/60 E76102 SQD200A 95max IC200A, 62max 110Tab 30max VCEX400/600V QF30AA60 QF20AA60 TRANSISTOR JC SQD200A60 SQD300A40 SQD200A40 D 1380 Transistor SQD400BA60 20S0 sqd300a60

    Untitled

    Abstract: No abstract text available
    Text: SQD23N06-31L www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 60 RDS(on) () at VGS = 10 V 0.031 RDS(on) () at VGS = 4.5 V 0.045 ID (A)


    Original     		PDF SQD23N06-31L 2002/95/EC AEC-Q101 O-252 SQD23N06-31L-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SQD25N15-52_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SQD25N15-52 AN609, 0449m 8764m 5279m 7571m 5776m 4258m 9407m 2556m