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    SRAM 1M X 8 DIP Search Results

    SRAM 1M X 8 DIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC Standard SRAM, 16X4, 55ns, TTL, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics Standard SRAM, 16KX1, 35ns, CMOS, PDIP20, 0.300 INCH, PLASTIC, DIP-20 Visit Rochester Electronics Buy
    MM54C89J Rochester Electronics LLC Standard SRAM, 16X4, 910ns, CMOS, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC Standard SRAM, 4KX1, 220ns, CMOS, PDIP18 Visit Rochester Electronics LLC Buy

    SRAM 1M X 8 DIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1M x 8 SRAM MODULE SYS81000FKX - 55/70/85/10/12 Elm Road, West Chirton Industrial Estate, North Shields, NE29 8SE, ENGLAND. TEL +44 0191 2930500. FAX +44 (0191) 2590997 Issue 2.4 : February 1999 Description Features The SYS81000FKX is a plastic 8 Mbit Static RAM


    Original     		PDF SYS81000FKX 565mW 990mW

    UT8Q1024K8

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet April, 2002 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q1024K8 44-lead -40oC 10krad 30krad 50krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet March 19, 2002 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q1024K8 44-lead -40oC 10krad 30krad 50krad

    ELO14

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet October 1, 2001 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q1024K8 1E-10 0E14n/cm 44-lead 10krad 30krad 50krad ELO14

    UT8Q1024K8

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet December 18, 2001 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q1024K8 -40oC 10krad 30krad 50krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet August 27, 2001 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q1024K8 1E-10 0E14n/cm 44-lead 10krad 30krad 50krad

    Untitled

    Abstract: No abstract text available
    Text: Standard Products QCOTSTM UT8Q1024K8 SRAM Preliminary Data Sheet March 6, 2002 INTRODUCTION The QCOTS TM UT8Q1024K8 Quantified Commercial Off-theShelf product is a high-performance 1M byte 8Mbit CMOS static RAM built with two individual 524,288 x 8 bit SRAMs


    Original     		PDF UT8Q1024K8 44-lead -40oC 10krad 30krad 50krad

    Untitled

    Abstract: No abstract text available
    Text: TRAILING EDGE PRODUCT - MINIMUM ORDER APPLIES 1M x 8 SRAM MODULE SYS81000FKX - 70/85/10/12 Elm Road, West Chirton, NORTH SHIELDS, Tyne & Wear NE29 8SE, England Tel. +44 0191 2930500 Fax. +44 (0191) 2590997 Description Issue 3.0 : February 2000 Features The SYS81000FKX is a plastic 8 Mbit Static RAM


    Original     		PDF SYS81000FKX 120ns

    7C109B

    Abstract: CU7C109-VC CY7C109 EME-6300H
    Text: Qualification Report August, 1994 QTP# 94111 Version 1.1 1M SRAM - RAM 2.5, 7% SHRINK MARKETING PART NUMBER CY7C109 DEVICE DESCRIPTION 128K x 8 Static RAM, 400-mil wide package PRODUCT DESCRIPTION for qualification Information provided in this document is intended for generic qualification and technically describes the Cypress part


    Original     		PDF CY7C109 400-mil 7C109B June/1994 CY7C109-VC 7C109B CU7C109-VC CY7C109 EME-6300H

    Untitled

    Abstract: No abstract text available
    Text: 1M x 8 SRAM MODULE SYS81000FKX - 70/85/10/12 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 001 858 674 2233, Fax No: (001) 858 674 2230 Issue 3.0 : February 2000 Description Features The SYS81000FKX is a plastic 8 Mbit Static RAM Module housed in a JEDEC standard 36 pin Dual


    Original     		PDF SYS81000FKX 565mW

    Untitled

    Abstract: No abstract text available
    Text: 1M x 8 SRAM MODULE SYS81000FK - 020/025/35 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 001 858 674 2233, Fax No: (001) 858 674 2230 Issue 3.0 : February 2000 Description Features The SYS81000FK is a plastic 8Mbit Static RAM Module housed in a JEDEC standard 36 pin Dual


    Original     		PDF SYS81000FK 165mW 512Kx8

    Untitled

    Abstract: No abstract text available
    Text: ASi? MT5C1001 883C 1M X 1 SRAM AUSTIN SEMICONDUCTOR, INC. SRAM 1 MEG X 1 SRAM AVAILABLE AS MILITARY SPECIFICATIONS PIN ASSIGNMENT Top View • SMD 5962-92316 • M IL -S T D -8 8 3 28-Pin DIP 400 MIL FEATURES • • • • High speed: 15, 20, 25, 35 and 45ns


    OCR Scan     		PDF MT5C1001 28-Pin

    Untitled

    Abstract: No abstract text available
    Text: A C f '"if \1M < * \'l M •< ' ¡'Oi'-f ' SRAM -V1T5C1 0 0 0 8 8 3 C L:bK X 8 S R A M sinü " " 128K X 8 SRAM ■ WITH DUAL CHIP ENABLE AVAILABLE A S M ILITARY SPEC IFIC A TIO N S PIN ASSIGNMENT Top View) • SM D 5962-89598 • M IL-STD-883 FEATURES •


    OCR Scan     		PDF IL-STD-883 32-Pin MIL-STD-883 MT5C1008 DS000006

    KM616U1000BL-L

    Abstract: No abstract text available
    Text: MEMORY ICs FUNCTION GUIDE 1. Low Power SRAM 5V Operation Den. 256K Org. 32K X 8 Op. Temp Speed KM62256CL KM62256CL-L 0 -7 0 ’ C 4 5/55/70 KM62256CLE -2 5 -8 5 =C KM62256CLI KM62256CLI-L -4 0 -8 5 °C 1M 64K X 8 KM68512CL KM68512CL-L 0 -7 0 ‘ C KM68512CLI


    OCR Scan     		PDF KM62256CL KM62256CL-L KM62256CLE KM62256CLE-L KM62256CLI KM62256CLI-L 28-TSOP 28-DIP 28-SOP KM68512CL KM616U1000BL-L

    Untitled

    Abstract: No abstract text available
    Text: mosaic semiconductor, inc. 1M x 8 SRAM MODULE SYS81000FKX - 55/70/85/10/12 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Issue2.4 : February 1999 Fax No: (619) 674 2230 Description Features The SYS81000FKX is a plastic 8 Mbit Static RAM


    OCR Scan     		PDF SYS81000FKX 565mW 120ns

    Untitled

    Abstract: No abstract text available
    Text: July 1990 Edition 2.0 FUJITSU DATA SHEET MB84 1000-80/-80L/-10/-10L/-12/-12L CMOS 1M LOW POWER SRAM 128K Words x 8 Bits CMOS Static Random Access Memory with Data Retention The Fujitsu MB841000 is a 131,072 words x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory uses asynchronous


    OCR Scan     		PDF 1000-80/-80L/-10/-10L/-12/-12L MB841000 MB841000-80/-80L MB841000-10/-1 MB841000-12/-12L 32-LEAD DIP-32P-M0I)

    ICE 47E

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 47E I> • 3?in7b2 GOlflTb'i 5 ■ F M I July 1990 Edition 2.0 — DATASHEET- , MB8410 0 0 -80/- 80U -10/- 10L/-12/- 12L CMOS 1M LOW POWER SRAM 128K Words x 8 Bits CMOS Static Random Access Memory with Data Retention The Fujitsu MB841000 is a 131,072 words x 8 bits static random access memory


    OCR Scan     		PDF MB8410 10L/-12/- MB841000 T-46-23-14 MB841000-80/-80L MB841000-10/-10L MB841000-12/-12L 32-LEAD 32007S ICE 47E

    A1719

    Abstract: 1m x 8 sram
    Text: "7 05*5 5 ^ . 1M x 8 SRAM DIL MODULE S Y iita q SYS81000FKX-55/70/85/10/12 limited 1,048,576 x 8 CMOS Static RAM Module Issue 2.0 : August 1994 Description j Features ] Access Times of 55/70/85/100/120 ns. 36 Pin JEDEC standard Dual-ln-Line package. The SYS81000FKX is a plastic 8M Static RAM


    OCR Scan     		PDF SYS81000FKX-55/70/85/10/12 SYS81000FKX 120ns YS81OOOFKX-55/7085/10/12 SYS81000FKX LI-10 A1719 1m x 8 sram

    1431 T

    Abstract: No abstract text available
    Text: 8 Megabit CM O S SRAM D E N S E - P A C D P S 1M S 8M P M I C R O S Y S T E M S DESCRIPTION: The D P S 1 M S 8 M P is a 1Meg x 8 high-density, low-power static RAM module comprised of two 512K x 8 monolithicSRAM's, an advanced high-speed CM OS decoder and decoupling capacitors surface mounted on


    OCR Scan     		PDF 600-mil-wide 32-pin 30A143-00 27Sims 1431 T

    Untitled

    Abstract: No abstract text available
    Text: mosaic 1M X 16 SRAM MODULE semiconductor, inc. S Y S 1 6 1 0 0 0 F K X - 7 0 /8 5 /1 0 /1 2 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Description Issue 1.4 : January 1999 Features The SYS161000FKX is a plastic 16Mbit Static


    OCR Scan     		PDF SYS161000FKX 16Mbit 512Kx8 512Kx16

    mb841000

    Abstract: No abstract text available
    Text: JW- ^ June 1992 Edition 4.0A FUJITSU DATA SHEET • MB841000-70, -85, -10 L, LL, and SL Versions CMOS 1M Low Power SRAM with Data Retention The Fujitsu MB841000 is a 131,072 word x 8 bits static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous circuitry and may be


    OCR Scan     		PDF MB841000-70, MB841000

    Untitled

    Abstract: No abstract text available
    Text: W S 1M 8-X D JX M/HITE /M ICROELECTRONICS 2x512Kx8 DUALITHIC SRAM ADVANCED* FEATURES REVOLUTIONARY PINOUT 36 CSOJ • Access Times 17, 20, 25, 35, 45, 55ns ■ TOP VIEW AO e r r A1 1- 2 1 36 z r N C 35 - 1A1ft A 2 T - 3 34 — A3C— - 4


    OCR Scan     		PDF 2x512Kx8 512Kx8

    samsung dram

    Abstract: cmos 4001 dip
    Text: MEMORY ICs FUNCTION GUIDE 4. ORDERING INFORMATION 4.1 DRAM KM 4 X DRAM X XXXXX X X X SPEED ORGANIZATION X1 X4 X8 X9 X16 X18 PROCESS & POWER •C: CMOS, 5V •V: CMOS, 3 3V •6 •7 : •8 : •10: 60ns 70ns 80ns 100ns PACKAGE DIP SOJ ZIP TS O P n TR: Reverse


    OCR Scan     		PDF 100ns 16M/4K, 16M/2K, 16M/1K, 75CXXA samsung dram cmos 4001 dip

    M8512

    Abstract: samsung dram AM8512 TSOP 56 Package nand memory
    Text: FUNCTION GUIDE MEMORY ICs 4. ORDERING INFORMATION 4.1 DRAM KM 4 X X XXXXX X X X - XX DRAM SPEED •6 : •7 : •8 : • 10: ORGANIZATION • 1: X1 • 4: X4 • 8: X8 60ns 70ns 80ns 100ns PACKAGE • 9: X9 •1 6 : X16 •P : DIP • 18: X18 • 32: x32 PROCESS & POWER


    OCR Scan     		PDF 100ns 150ns 16Bit 18Bit M8512 samsung dram AM8512 TSOP 56 Package nand memory