ALLIANCE SEMICONDUCTOR
Abstract: AS80M2185
Text: Product Proposal Alliance Semiconductor AS80M2185 EMI Reduction IC FEATURES • 2 spread % selections: - 1.25% and – 3.75% Provides up to 15 dB EMI reduction • 3.3V operating voltage • Generates a 1X low EMI spread spectrum clock from the input frequency
|
Original
|
PDF
|
AS80M2185
ALLIANCE SEMICONDUCTOR
AS80M2185
|
mpx2100ap altimeter
Abstract: FE202 AN1552 MC68HC11/mpx2100ap altimeter MPX7000 Digital Pressure Gauge circuit diagram HC11 MC33272 MC78L08ACP MPX2000
Text: MOTOROLA Order this document by AN1552/D SEMICONDUCTOR APPLICATION NOTE MPX7100AP: The Sensor at the Heart of Solid-State Altimeter Applications AN1552 By Chris Winkler and Jeff Baum Sensor Systems Engineering Group Motorola Semiconductor Products Sector Phoenix, Arizona
|
Original
|
PDF
|
AN1552/D
MPX7100AP:
AN1552
AN1552/D*
mpx2100ap altimeter
FE202
AN1552
MC68HC11/mpx2100ap altimeter
MPX7000
Digital Pressure Gauge circuit diagram
HC11
MC33272
MC78L08ACP
MPX2000
|
Untitled
Abstract: No abstract text available
Text: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case: QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg
|
Original
|
PDF
|
BAV200
OD-80)
BAV201
BAV202
BAV203
BAV200-GS18
BAV200-GS08
BAV201-GS18
BAV201-GS08
|
BAV203-GS08
Abstract: No abstract text available
Text: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case:QuadroMELF Glass Case SOD-80 Weight: approx. 34 mg Cathode Band Color: Black Packaging Codes/Options:
|
Original
|
PDF
|
BAV200
OD-80)
BAV201
BAV202
BAV203
BAV200-GS18
BAV200-GS08
BAV201-GS18
BAV201-GS08
BAV203-GS08
|
Untitled
Abstract: No abstract text available
Text: BAV200 / 201 / 202 / 203 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data 9612009 Case:QuadroMELF Glass Case SOD-80 Weight: approx. 33.7 mg Cathode Band Color: Black Packaging Codes/Options:
|
Original
|
PDF
|
BAV200
OD-80)
BAV201
BAV202
BAV203
BAV200-GS18
BAV200-GS08
BAV201-GS18
BAV201-GS08
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER <*855452 SS INTERNATIONAL d ËT| MÛ554S2 ODOSOSS R EC TIFIER 55C 05055 D Data Sheet No. PD-2.047B INTERNATIONAL R E C T IF IE R I R / - 3 - / “ 7 SOSO SERIES 8 Am p Schottky Power Rectifiers Description/Features Major Ratings and Characteristics
|
OCR Scan
|
PDF
|
554S2
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER SS DE I MÖ55452 GDGSIEB 55C 05 123 'V855452 INTERNATIONAL RECTIFIER D Data Sheet No. PD-2.055A r-oy- ^ INTERNATIONAL RECTIFIER IOR BQHQ SERIES 6 0 Amp, 100V Schottky Power Rectifers I j i i
|
OCR Scan
|
PDF
|
V855452
|
Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER SS î Êr| 4ÖS5I45E GD0SD17 Data Sheet No. PD-2.058B 55C 05097 4855452 INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R r- i 3-0 f 40CDQ & GQCDQ SERIES AND SDS41 40 and 60 Amp Dual Schottky Center Tap Rectifiers Description/Features
|
OCR Scan
|
PDF
|
S5I45E
GD0SD17
40CDQ
SDS41
40CDQ
SD241
60CDQ
SD241)
|
2025 ct
Abstract: n5204 T30 rectifier 2N5204 2N681 T120 16A CK801 2N6204 2N682 LT 5226
Text: international SS rectifier '4855452 INTERNATIONAL RECTIF IE R ]M f|4 ÔS54S2 00047^5 4 550 04795 Data Sheet No. PD-3.081A 1 INTERNATIONAL RECTIFIER r ~ /s-' IÖR SN681 & SN5S04 SERIES 25 and 3 5 Amp RMS SCRs Major Ratings and Characteristics 2N681-92 2N5204-Q7
|
OCR Scan
|
PDF
|
QDD47c
SN681
SN5S04
2N681-92
2N5204-07
2N5204
2025 ct
n5204
T30 rectifier
2N681
T120 16A
CK801
2N6204
2N682
LT 5226
|
SST6908
Abstract: SST6910 pa104
Text: SILICONIX INC IflE D • 8554735 QOlBlbl k ■ SST6908 SERIES H ÌS S 5& " \ N-Channel JFET Circuits The SST6908 Series is much more than a JFET. The addition of back-to-back diodes effectively clamps input "over-voltage” while a highperformance JFET provides an effective amplifica
|
OCR Scan
|
PDF
|
SST6908
OT-143
SST6910
pa104
|
Untitled
Abstract: No abstract text available
Text: 6 5 I 2 3 .470 , l00+:$' P.C.B. MOUNTING PATTERNS VIEW FROM COMPONENT SIDE SCALE NOTES; C 1- JACK FOR MATING WITH SHIELDED PLUG (MOLEX 95043 SERIES 2- PRODUCT SPECIFICATION : PS-85543-001 3- APPLICATION SPECIFICATION :A S - 9 5 0 0 I 4- PACKAGING SPECIFICATION; SEE CHART
|
OCR Scan
|
PDF
|
PS-85543-001
SD-85543-002
|
ss 8554
Abstract: No abstract text available
Text: L X 8554 5 A Extremely Lo w D ropout P ositive A djustable R egulator I HE I n f i n i t e P o w e r OF P R E L I M I N A R Y I n n o v a t i o n DESCRIPTION T h e LX855-4 is a very low d ropout three term inal adju stable regulator with a m inim um o f 5A output current.
|
OCR Scan
|
PDF
|
LX855-4
LX8554
10kHz
ss 8554
|
Intronic
Abstract: No abstract text available
Text: HB56TW132D-6BL/7BL/8BL 1,048,576-Word X 32-Bit High Density Dynamic RAM Module HITACHI The HB56TW 132D is a 1M x 32 dynamic RAM Sm all O utline D IM M S.O .D IM M , mounted 8 p ieces o f 4-M b it DR AM (H M 51W 4400B LTT ) sealed in TSOP package. An outline of the HB56TW132D is 72-pin Zig Zag
|
OCR Scan
|
PDF
|
HB56TW132D-6BL/7BL/8BL
576-Word
32-Bit
HB56TW
4400B
HB56TW132D
72-pin
72-pin)
Intronic
|
25275
Abstract: No abstract text available
Text: TE X A S IN S T R { L I N / I N T F O T s D Ê| 0033=127 TELECOM CIRCUITS r 3 T-75-11-37 TCM2101/2 PCM REPEATER DECEMBER 1982 Features GND M • • • • • • • PCM Signal amplification Two ALBO taps High Q or Low Q clock extraction Decision time adjustment
|
OCR Scan
|
PDF
|
T-75-11-37
TCM2101/2
ALB01
ALB02
25275
|
|
|
PK95
Abstract: No abstract text available
Text: 10 0.76 TYP. '.030 8.89 ±0.05 .350 ±.002 TYP. 0 .1 0 / .0 0 4 Y 1.27 .050 6.35 ±0.08 .250 ±.003 H 0.10/.004|x| RECOMMENDED F 15.15 ±0.08 .596 ±.003 6.54 ±0.08 .257 ±.003 2.54 +0.25 11.94 100 +,0”'0 •1üü-.ooo 3.60 +0.25 ,+.010 -.000 RECOMMENDED
|
OCR Scan
|
PDF
|
PS-85543-001
AS-95001
PK-95122-002
SD-85543-002
PK95
|
Untitled
Abstract: No abstract text available
Text: CIRCUIT ASSEMBLY CORP IbE D Solder C u p -M etal Shell • 51337SÖ DOOlbiS 5 m ^ Backshells-Straight& Angled Exit PVC u u "T INSERT * I Irl Irl H h Irl h H I ■ Benefits/Features U.L. recognized/C.S.A. certified Sizes available - 9,15,25, 37, and 50 position
|
OCR Scan
|
PDF
|
51337SÃ
UL94V-0
-09DPS
-15DPS
-19DPS
-25DPS
-50DPS
-15DPD
CA-19DPD
-25DPD
|
Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS U N P U B L IS H E D . BY W O O COPYRIGHT 4 RELEASED ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS 2 REVISIONS - - R E S ER V ED . G P LTR D E S C R IP TIO N R1 BODY D DATE REV PER ECR 0 8 - 0 0 1 3 3 7 16JAN08 DWN APVD JR TM D
|
OCR Scan
|
PDF
|
16JAN08
250CT07
|
50HQ020
Abstract: 1N1B0 AWM 2651 IQR 0387 KS 0302 1N6097 50HQ DO-203AB rectifier 1046 HI410
Text: INTERNATIONAL RECTIFIER 4855^52 ~S5 INTERNATIONAL RECTIFIER ]>lF| 14Ö5S4SS ÜDDS1D3 55C 05 103 D Data Sheet No. PD-2.032D J - 0 3 - 2^1_ INTERNATIONAL RECTIFIER IO R 5 0 H 0 , 1 N 6 0 S 7 & SB S E R IE S 5 0 and 6 0 Amp S cho ttky Power R ectifiers Major Ratings and Characteristics
|
OCR Scan
|
PDF
|
N6097
1N6097-98
1N6097
1N1B01
50HQ020
1N1B0
AWM 2651
IQR 0387
KS 0302
1N6097
50HQ
DO-203AB
rectifier 1046
HI410
|
Untitled
Abstract: No abstract text available
Text: Temic TP1220L, TP/VP2020L, BSS92 Semiconductors P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) n>s(on) Max (Q) VGS(th) (V) Id (A) TP1220L -120 20 @ Vq S = -4.5 V -1 to -2.4 -0.12 TP2020L -200 20 @ Vqs - - 4 - 5 V
|
OCR Scan
|
PDF
|
TP1220L,
TP/VP2020L,
BSS92
TP1220L
TP2020L
VP2020L
S-52426â
14-Apr-97
00EE570
|
stk 412 -410
Abstract: stk 5315 STK 419 150 IRF CANAL P stk 412 -420 STK 412 150 equivalent stk 412 750 LTM 4620 component data D965 equivalent
Text: Microprocessor Assembly Language Programming Manual National Semiconductor Publication Number 4200130A Order Number IPC-16S/969Y January 1977 PACE Processing And Control Element Assembly Language Programming Manual National Semiconductor Corporation 2900 Semiconductor Drive
|
OCR Scan
|
PDF
|
200130A
IPC-16S/969Y
200130A,
IPC-16S
DD10M17
stk 412 -410
stk 5315
STK 419 150
IRF CANAL P
stk 412 -420
STK 412 150 equivalent
stk 412 750
LTM 4620
component data
D965 equivalent
|
Untitled
Abstract: No abstract text available
Text: S4E I CIRCUIT ASSEMBLY CORP • 213375A OGÜ17flfl 2T7 « C A C A -& -0 5 -CPU. ORIENTATION DIP SOCKET OPEN FRAME [ 2.54 ] .177 .197 Features Open frame construction with precision turned screw machine contacts Closed bottom for 100% protection of contact
|
OCR Scan
|
PDF
|
13375A
17flfl
UL94V-0
|
g 9084
Abstract: bav 24 diode BAV 303
Text: BAV300.BAV303 Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Saving space • Herm etic se a led parts • Fits onto S O D 323 / S O T 23 footprints • Electrical data identical with the B A V 100.B AV103 / BAV 200.B AV203 devices Applications
|
OCR Scan
|
PDF
|
BAV300.
BAV303
AV103
AV203
BAV301
01-Apr-99
g 9084
bav 24 diode
BAV 303
|
Untitled
Abstract: No abstract text available
Text: HB56D836IB Series 8,388,608-W ord x 36-Bit High Density Dynamic RAM Module HITACHI The HB56D836IB is a 8M x 36 dynamic RAM module, mounted 16 pieces of 16-Mbit DRAM HM5117400AS sealed in SOJ package and 8 pieces of 4-Mbit DRAM (HM514100BS) sealed in SOJ package. An outline of the HB56D836IB is
|
OCR Scan
|
PDF
|
HB56D836IB
36-Bit
16-Mbit
HM5117400AS)
HM514100BS)
72-pin
|
VP0610, sot23
Abstract: marking HSs SOT23 TO206AC VP0610T
Text: SILICONIX INC läE D C X Silico n ix X V • Ö25473S 0014110 □ VP0610 SERIES in c o rp o r a te d P-Channel Enhancement-Mode MOS Transistors T Z I-Z S PRODUCT SUMMARY PART NUMBER V BR DSS r DS(ON) (Í1 ) (V) VP0610E -6 0 10 TO-92 ■o (A) PACKAGE -0.25
|
OCR Scan
|
PDF
|
25473S
VP0610
VP0610E
O-206AC
VP0610L
VP0610T
OT-23
VPDS06
VP0610, sot23
marking HSs SOT23
TO206AC
VP0610T
|
