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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 1 THIS COPY IS PROVIDED ON A RESTRICTED BASIS AND IS NOT TO BE USED IN ANY WAY DETRIMENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART NUMBER MLT4SH-LP316 MLT6SH-LP316 MLT8SH-LP316 MLT10SH-LP316 MLT12SH-Q316 .88 22.4 B .75 .02 [19.1] MAX BUNDLE DIAMETER


    Original     		MLT4SH-LP316 MLT6SH-LP316 MLT8SH-LP316 MLT10SH-LP316 MLT12SH-Q316 S41164 MLT12SH-Q316 N41164BS/05 N41164BS PDF

    JESD22-A113-B

    Abstract: EC-1019
    Text: EC-1019 PRODUCTION DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 3000 MHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 3000 MHz 18.5 dB Gain at 1000 MHz 19 dBm Output P1dB at 1000 MHz 34 dBm Output IP3 at 1000 MHz 5.5 dB Noise Figure at 2000 MHz


    Original     		EC-1019 OT-89 EC-1019 AP-000194-000 AP-000192-000 AP-000487-000 SS-000115-000 JESD22-A113-B PDF

    0.1 micro farad capacitor datasheet

    Abstract: capacitor 100 micro farad 0.01 micro farad capacitor data sheet 1 micro farad capacitor JESD22-A113-B 0.1 micro farad capacitor data sheet 100 micro farad capacitor 100 micro farad capacitor datasheet bipolar transistor ghz s-parameter GHZ micro-X Package
    Text: EC-1019 PRODUCTION DATA SHEET HIGH LINEARITY BROADBAND AMPLIFIER DC - 6 GHz Features Applications „ „ Broadband Gain Blocks „ „ „ „ DC to 6 GHz 18.5 dB Gain at 1000 MHz 19 dBm Output P1dB at 1000 MHz 34 dBm Output IP3 at 1000 MHz 5.5 dB Noise Figure at 2000 MHz


    Original     		EC-1019 OT-89 EC-1019 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 SS-000115-000 0.1 micro farad capacitor datasheet capacitor 100 micro farad 0.01 micro farad capacitor data sheet 1 micro farad capacitor JESD22-A113-B 0.1 micro farad capacitor data sheet 100 micro farad capacitor 100 micro farad capacitor datasheet bipolar transistor ghz s-parameter GHZ micro-X Package PDF

    Untitled

    Abstract: No abstract text available
    Text: QS83280 Q High-Speed CMOS 32Kx8 SRAM with Common I/O Q S83280 FEATURES/BENEFITS • • • • • 6-Transistor memory cell for high reliability JEDEC standard pinout Military product compliant to MIL-STD-883 Low power, high-speed QCMOS technology Equal access and cycle times


    OCR Scan     		QS83280 32Kx8 S83280 MIL-STD-883 12ns/15ns 15ns/20ns 28-pin QS83280 DSS-00011-00 PDF

    S-41166

    Abstract: No abstract text available
    Text: T H IS COPY IS PROVIDED ON A RESTRICTED BAS IS AND IS NOT TO BE USED O - .88 IN ANY WAY DETRIM ENTAL TO THE INTERESTS OF PANDUIT CORP. PANDUIT PART MAX.BUNDLE PACKAGE LENGTH NO. DIA. Q T Y . "L " + / -.3" [ 7 ] MLT4D5H-Q316 4" [ 102 ] 25 29.5" [ 749 ]


    OCR Scan     		MLT4D5H-Q316 MLT6D5H-Q316 SS00026 SS00011 S41166 S-41166 PDF

    Untitled

    Abstract: No abstract text available
    Text: THIS COPY IS PR OV ID ED ON A RESTRI CT ED BASIS AND IS NOT TO BE USED IN ANY WAY DE TR IM EN TA L TO THE INTERESTS OF PA NDUIT CORP. PANDUIT MAX.BUNDLE PACKAGE LENGTH PART NO. DIA. Q T Y . "L " + /-.3" [ 7 ] MLT4DSH-Q 4" [ 102 ] 25 29.5" [ 749 ] MLT6DSH-Q 6" [ 152 ]


    OCR Scan     		SS00026 SS00011 PDF