SS8550 Y2 TRANSISTOR Search Results

SS8550 Y2 TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

SS8550 Y2 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
ss8050 sot-323 Abstract: ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-323 Plastic-Encapsulate Transistors SS8550 SOT-323 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2. Emitter 3. Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	OT-323 SS8550 OT-323 SS8050 ss8050 sot-323 ss8550 Y2 TRANSISTOR SS8050 ss8550 transistor SS8550 SS8050 Y2	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8550 OT-23 SS8050 -100mA -800mA -800mA, -80mA	PDF
SS8550 sot-23 Y2 Abstract: ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8550 SOT-23 TRANSISTOR PNP FEATURES Complimentary to SS8050 1. Base 2.Emitter 3.Collector MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8550 OT-23 SS8050 SS8550 sot-23 Y2 ss8550 sot-23 transistor ss8050 sot23 transistor marking y2 ss8050 sot-23 MARKING Y2 SS8050 SS8050 equivalent SS8050 sot-23 equivalent transistor SS8550	PDF
ss8550 sot-23 Abstract: SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR Text: SS8550 SOT-23 Transistor PNP SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Dimensions in inches and (millimeters) Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 SS8550 OT-23 SS8050 -100A, -100mA -800mA -800mA, -80mA ss8550 sot-23 SS8550 sot-23 Y2 sot23 transistor marking y2 SS8050 Y2 marking Y2 ss8550 ss8050 sot-23 transistor marking y2 SS8050 sot-23 Y2 ss8550 TRANSISTOR	PDF
SS8550 sot-23 Y2 Abstract: ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23 Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8550 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector Dissipation: PC=0.3W (TC=25°C Lead-free APPLICATIONS z High Collector Current. SOT-23	Original	SS8550 SS8550. OT-23 BL/SSSTC087 SS8550 sot-23 Y2 ss8550 sot-23 sot23 transistor marking y2 SS8550 transistor SS8550 ss8550 TRANSISTOR ss8550 Y2 TRANSISTOR ss8550 TRANSISTOR equivalent transistor marking y2 Y2 SOT23	PDF
ss8550 Abstract: 2SS8550 ss8550 sot-23 SS8550 sot-23 Y2 SS8550 transistor sot23 transistor marking y2 ss8550 Y2 TRANSISTOR Y2 SOT23-3 transistor SS8550 MARKING 01 Text: SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES Power dissipation 1 Base PCM : 0.3 W Collector Current ICM : - 1.5 A Collector-base voltage	Original	SS8550 OT-23 -80mA -100mA -800mA -50mA, 30MHz 01-June-2005 ss8550 2SS8550 ss8550 sot-23 SS8550 sot-23 Y2 SS8550 transistor sot23 transistor marking y2 ss8550 Y2 TRANSISTOR Y2 SOT23-3 transistor SS8550 MARKING 01	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR PNP SOT–23 FEATURES  High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value	Original	OT-23 SS8550 SS8050 VCE-10V	PDF
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8550 TRANSISTOR PNP SOT–323 FEATURES  High Collector Current  Complementary to SS8050 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 SS8550 SS8050 -100mA -800mA -800mA, -80mA -10mA	PDF
TPT5609 Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)	Original	2N3904 2N3906 2N4124 2N4400 2N4401 2N4402 2N4403 2N5401 2N5551 2N6517 TPT5609 SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A	PDF
bq 8050 Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ Text: 目录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管	Original	OD-123 OD-123 OD-323 OD-323 OD-523 OD-523 OT-23 OT-23 OT-323 OT-323 bq 8050 HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ	PDF
Y2 transistor Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123	Original	huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882	PDF
Transistor S8550 2TY Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250	Original	OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6	PDF