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    Abstract: No abstract text available
    Text: SSF10N90A Advanced Power MOSFET BVdss = 900 V ^DS on = 1.2 Í2 lD = 6.5 A FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 MA(Max ) @ VDS = 900V


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    SSF10N90A SSF10N9OA PDF