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    diode marking 41a on semiconductor

    Abstract: SSF3339 SSF33
    Text: SSF3339 D DESCRIPTION The SSF3339 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G S GENERAL FEATURES Schematic diagram


    Original     		PDF SSF3339 SSF3339 OT-23 OT-23 diode marking 41a on semiconductor SSF33

    Mosfet

    Abstract: SSF3339
    Text: SSF3339 30V P-Channel MOSFET Main Product Characteristics D VDSS -30V RDS on 37mΩ (typ.) ID -4.1A G S ① SOT-23 Marking and Pin Schematic Diagram Assignment Features and Benefits   Advanced MOSFET process technology Special designed for PWM, load switching and


    Original     		PDF SSF3339 OT-23 reliSF3339 Mosfet SSF3339