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Microchip Technology Inc AT21CS11-SSH10-T IC EEPROM 1KBIT I2C 125KHZ 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AT21CS11-SSH10-T	Digi-Reel	7,948		1	1 $0.26 10 $0.26 100 $0.26 1000 $0.26 10000 $0.26	Buy Now
	AT21CS11-SSH10-T	Cut Tape	7,948		1	1 $0.26 10 $0.26 100 $0.26 1000 $0.26 10000 $0.26	Buy Now
	AT21CS11-SSH10-T	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.2575	Buy Now
Mouser Electronics	AT21CS11-SSH10-T		7,982			1 $0.25 10 $0.25 100 $0.25 1000 $0.25 10000 $0.25	Buy Now
Microchip Technology Inc	AT21CS11-SSH10-T	Reel	9,268	7 Weeks		1 $0.25 10 $0.25 100 $0.24 1000 $0.23 10000 $0.22	Buy Now
Onlinecomponents.com	AT21CS11-SSH10-T					1 - 10 - 100 - 1000 - 10000 $0.2526	Buy Now
NAC	AT21CS11-SSH10-T		8,000		1	1 $0.31 10 $0.31 100 $0.28 1000 $0.25 10000 $0.25	Buy Now

Avnet Silica	AT21CS11-SSH10-T			9 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Microchip Technology Inc AT21CS11-SSH10-B IC EEPROM 1KBIT I2C 125KHZ 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AT21CS11-SSH10-B	Tube	5,488		1	1 $0.26 10 $0.26 100 $0.26 1000 $0.26 10000 $0.26	Buy Now
Mouser Electronics	AT21CS11-SSH10-B		1,298			1 $0.25 10 $0.25 100 $0.25 1000 $0.25 10000 $0.25	Buy Now
Microchip Technology Inc	AT21CS11-SSH10-B	Tube	11,900	7 Weeks		1 $0.25 10 $0.25 100 $0.24 1000 $0.23 10000 $0.22	Buy Now
Onlinecomponents.com	AT21CS11-SSH10-B					1 - 10 - 100 $0.2985 1000 $0.274 10000 $0.2488	Buy Now
NAC	AT21CS11-SSH10-B	Tube	9,500		1	1 $0.31 10 $0.31 100 $0.28 1000 $0.25 10000 $0.25	Buy Now

Avnet Silica	AT21CS11-SSH10-B			6 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	AT21CS11-SSH10-B			5 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TE Connectivity OJS-SH-105HEF,-00000 RELAY GEN PURPOSE SPST 16A 5V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	OJS-SH-105HEF,-00000	Tray	908		1	1 $2.28 10 $1.991 100 $1.7396 1000 $1.51952 10000 $1.38412	Buy Now
Littelfuse Inc NPSSH103F3T1NDM01 THERM NTC 10KOHM 3892K PROBE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NPSSH103F3T1NDM01	Bulk	515		1	1 $6.92 10 $6.92 100 $4.8691 1000 $3.75324 10000 $3.75324	Buy Now
Mouser Electronics	NPSSH103F3T1NDM01					1 $5.88 10 $5.48 100 $4.33 1000 $3.57 10000 $3.57	Get Quote
RS	NPSSH103F3T1NDM01	Bulk		8 Weeks	100	1 - 10 - 100 $5.53 1000 $5.53 10000 $5.53	Get Quote
TE Connectivity OJS-SH-105HMF,-00000 RELAY GEN PURPOSE SPST 10A 5V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	OJS-SH-105HMF,-00000	Tray	181		1	1 $1.94 10 $1.696 100 $1.4813 1000 $1.29392 10000 $1.17862	Buy Now

Find more SSH10 price and stock on Findchips.com

SSH10 Datasheets (37)

Part	Manufacturer	Description	Datasheet Type	PDF
SSH10	Tyco Electronics	DIP Switches, Switches, SWITCH DIP SIP RT ANG 10POS	Original	PDF
SSH100-05	Allegro MicroSystems	AC to DC Power Supply, Open Frame, 5V Output	Original	PDF
SSH100-05-T	Allegro MicroSystems	AC/DC POWER SUPPLY SNGL OUT 5V 20A 100W	Original	PDF
SSH100-12	Allegro MicroSystems	AC to DC Power Supply, Open Frame, 12V Output	Original	PDF
SSH100-12-T	Allegro MicroSystems	AC/DC POWER SUPPLY SNGL OUT 12V 8.5A 100W	Original	PDF
SSH100-24	Allegro MicroSystems	AC to DC Power Supply, Open Frame, 24V Output	Original	PDF
SSH100-24-T	Allegro MicroSystems	AC/DC POWER SUPPLY SNGL OUT 24V 4.5A 100W	Original	PDF
SSH10 (2-1437589-1)	Tyco Electronics	DIP, Rotary DIP, SIP Switches and DIP Shunts - Standard; SSH10=10 POS SIP SWITCH ( Alcoswitch )	Original	PDF
SSH10N05	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
SSH10N05	Unknown	FET Data Book	Scan	PDF
SSH10N05	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
SSH10N06	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
SSH10N06	Unknown	FET Data Book	Scan	PDF
SSH10N06	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

SSH10N08	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
SSH10N08	Unknown	FET Data Book	Scan	PDF
SSH10N08	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
SSH10N10	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
SSH10N10	Unknown	FET Data Book	Scan	PDF
SSH10N10	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

SSH10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SSH10N60B Abstract: No abstract text available Text: SSH10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching	Original	PDF	SSH10N60B SSH10N60B
SSH10N90A Abstract: MOSFET 10A Text: N-CHANNEL POWER MOSFET SSH10N90A FEATURES BVDSS = 900V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 900V	Original	PDF	SSH10N90A SSH10N90A MOSFET 10A
mosfet 10a 800v Abstract: MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs Text: N-CHANNEL POWER MOSFET SSH10N80A FEATURES BVDSS = 800V • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Lower Leakage Current: 25µA Max. @ VDS = 800V	Original	PDF	SSH10N80A mosfet 10a 800v MOSFET 800V 10A SSH10N80A mosfet 10a 800v fs
SSH10N60A Abstract: No abstract text available Text: SSH10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS on = 0.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V	Original	PDF	SSH10N60A SSH10N60A
SSH107 Abstract: SSH104 Text: SSH101 THRU SSH107 1.0 AMP SURFACE MOUNT HIGH EFFICIENCY RECTIFIERS VOLTAGE RANGE 50 to 800 Volts CURRENT 1.0 Ampere FEATURES * Ideal for surface mount applications * Easy pick and place * Built-in strain relief * Fast switching speed SS .106 2.7 .098(2.5)	Original	PDF	SSH101 SSH107 300us SSH107 SSH104
SSH10N60B Abstract: No abstract text available Text: SSH10N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching	Original	PDF	SSH10N60B SSH10N60B
SSH10N90A Abstract: gs 05 Text: SSH10N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 1.2 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 900V	Original	PDF	SSH10N90A 200nF 300nF SSH10N90A gs 05
SSH10N80A Abstract: SSF10N80A Text: SSH10N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 0.95 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 25 µA (Max.) @ VDS = 700V	Original	PDF	SSH10N80A SSH10N80A SSF10N80A
OIML C3 Abstract: OIMLR60 Text: SSH 单点式传感器 1. 产品特点： o 不锈钢材质 o 激光焊接密封，适用于恶劣环境 o 紧凑结构 o 适用于不锈钢防水秤以及化工，食品和制药行业的过程称重控制 2. SSH 单点式传感器技术指标： SSH 型号	Original	PDF	SSH50500kg) SSH1000kg) OIML C3 OIMLR60
SSV06 Abstract: SSV10 SSH06 SSH06 1-1437589-9 Text: S Series Sip Switches, Low Profile, Vertical and Right Angle S Series A FEATURES: MATERIAL SPECIFICATIONS: • End-to-end stackable in .100" center SSV/SLV versions Base .PPS 94V-0/Encapsulated Ceramic (SLV/SLH) Cover .PBT 94V-0	Original	PDF	SSH02 SSH04 SSH06 SSH08 SSH10 SSV06 SSV10 SSH06 SSH06 1-1437589-9
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
SSH6N80 Abstract: SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80 SSH8N80 SSH12N70 Text: FUNCTION GUIDE MOSFETs TO-3P N-CHANNEL Continued Part Number BV dss(V) lD(on)(A) RDS(on){Q) R0jc(K/W) Po(Watt) Page SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 700 4.00 5.00 6.00 8.00 10.00 12.00 3.500 2,500 1.900 1.400 1.200 0.900 0.93 0.83 0.73 0.65	OCR Scan	PDF	SSH4N70 SSH5N70 SSH6N70 SSH8N70 SSH10N70 SSH12N70 SSH4N80 SSH5N80 SSH6N80 SSH8N80 SSH3N90 ssh12n80 ssh7n90 SSH11N90 ssh-6n80
DIODE S3c Abstract: ssm10n70 Text: SAMSUNG SEM ICO NDUCTOR INC - SSM10N70 SSH10N70 >.U DE I T T t m M S □□OSB'it. □ W ~ N-CHANNEL - • r * POWER MOSFETS V - ^ - IS t' Preliminary Specifications PRODUCT SUMMARY 700 Volt, i.a O h m SFET Part Number Vos Rosion Id SSM10N70 700V 1.00	OCR Scan	PDF	SSM10N70 SSH10N70 SSH10N70 DIODE S3c
SSH10N60A Abstract: No abstract text available Text: SSH10N60A Advanced Power MOSFET FEATURES B V d ss = 6 0 0 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 t-i A M ax. @ VDS = 600V	OCR Scan	PDF	SSH10N60A SSH10N60A

ssh10n70 Abstract: 10N70 Text: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • • • • • • • T O -3 P Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSH10N70 10N70 ssh10n70 10N70
irfs250a Abstract: No abstract text available Text: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A	OCR Scan	PDF	IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a
mosfet yb Abstract: SSH10N60A Text: Advanced SSH10N60A P o w e r MOSFET FEATURES BV dss = • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea	OCR Scan	PDF	SSH10N60A mosfet yb SSH10N60A
OA 161 diode Abstract: SSH10N90A Text: Advanced SSH10N90A Power MOSFET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|^A (Max.) @ V DS = 900V	OCR Scan	PDF	SSH10N90A OA 161 diode SSH10N90A
SSH10 Abstract: No abstract text available Text: SSH10N90A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 900 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 p A Max. @ VOS= 900V	OCR Scan	PDF	SSH10N90A SSH10N9 SSH10
SSH10N80 Abstract: 250M SSH10N70 Text: N-CHANNEL POWER MOSFETS SSH10N80/70 FEATURES • Lower Rds<on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • improved high temperature reliability	OCR Scan	PDF	SSH10N80/70 SSH10N80 SSH10N70 250M
Untitled Abstract: No abstract text available Text: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|iA (Max.) @ V DS = 600V	OCR Scan	PDF	SSH10N60A Dio64 O-220-F-4L GQ3b33E 0G3b333
SSH10N55 Abstract: SSH10N60 Text: N-CHANNEL POWER MOSFETS SSH10N60/55 FEATURES • • • • • • • Lower R d sio n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSH10N60/55 SSH10N60 SSH10N55 gs-20
8275-2 Abstract: 2355D SSH10N60A Text: SSH10N60A Advanced Power MOSFET FEATURES BV dss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 10 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \|iA (Max.) @ V DS = 600V	OCR Scan	PDF	SSH10N60A 71bMm2 O-220-F-4L DD3b33E 003b333 8275-2 2355D SSH10N60A
SSH10N70 Abstract: No abstract text available Text: N-CHANNEL POWER MOSFETS SSH10N70 FEATURES • Low er Rds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSH10N70 SSM10N70 SSH10N70

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SSH10 Price and Stock

Microchip Technology Inc AT21CS11-SSH10-T

Microchip Technology Inc AT21CS11-SSH10-B

TE Connectivity OJS-SH-105HEF,-00000

Littelfuse Inc NPSSH103F3T1NDM01

TE Connectivity OJS-SH-105HMF,-00000

SSH10 Datasheets (37)

SSH10 Datasheets Context Search

SSH10N60B

SSH10N90A

mosfet 10a 800v

SSH10N60A

SSH107

SSH10N60B

SSH10N90A

SSH10N80A

OIML C3

SSV06

fqp60n06

SSH6N80

DIODE S3c

SSH10N60A

ssh10n70

irfs250a

mosfet yb

OA 161 diode

SSH10

SSH10N80

Untitled

SSH10N55

8275-2

SSH10N70