Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSM3K301T Search Results

    SF Impression Pixel

    SSM3K301T Price and Stock

    Toshiba America Electronic Components SSM3K301T(TE85L,F)

    MOSFET N-CH 20V 3.5A TSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SSM3K301T(TE85L,F) Digi-Reel 1
    • 1 $0.43
    • 10 $0.43
    • 100 $0.43
    • 1000 $0.43
    • 10000 $0.43
    		Buy Now
    SSM3K301T(TE85L,F) Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SSM3K301T(TE85L,F) Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    SSM3K301T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3K301T Toshiba Silicon N-Channel MOS Type Power Management Switch Applications Original PDF
    SSM3K301T(TE85L,F) Toshiba FETs - Single, Discrete Semiconductor Products, MOSF N-CH 20V 3.5A TSM Original PDF

    SSM3K301T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 m max (@VGS = 1.8 V) Ron = 74 m (max) (@VGS = 2.5 V)


    Original     		SSM3K301T PDF

    SSM3K301T

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T SSM3K301T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T PDF

    SSM3K301T

    Abstract: No abstract text available
    Text: SSM3K301T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K301T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 110mΩ max (@VGS = 1.8V)


    Original     		SSM3K301T SSM3K301T PDF

    SSM3K301T

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T SSM3K301T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Preliminary SSM3K301T Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T PDF

    SSM3K301T

    Abstract: No abstract text available
    Text: SSM3K301T 東芝電界効果トランジスタ シリコンＮチャネルMOS形 SSM3K301T ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : Ron = 110mΩ max (@VGS = 1.8V)


    Original     		SSM3K301T SSM3K301T PDF

    SSM3K301T

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T SSM3K301T PDF

    SSM3K301T

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • 1.8 V drive • Low ON-resistance: Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T SSM3K301T PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K301T TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K301T Power Management Switch Applications High-Speed Switching Applications • • 1.8 V drive Low ON-resistance: Unit: mm Unit: mm Ron = 110 mΩ max (@VGS = 1.8 V) Ron = 74 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K301T PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983 PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    18650 charger

    Abstract: 18650 lithium ion 18650 lithium ion constant voltage charge 18650 25A1037ak mcr03 toshiba battery charger 2SC2412K GRM188 SSM3K301T
    Text: CMOS IC Application Note S-8209B Series Usage Guidelines Rev.1.3_00 The S-8209B Series is a battery protection IC with the cell-balance function. This application note is guideline on the typical connection examples when using the S-8209B Series for applications.


    Original     		S-8209B S-8209B 18650 charger 18650 lithium ion 18650 lithium ion constant voltage charge 18650 25A1037ak mcr03 toshiba battery charger 2SC2412K GRM188 SSM3K301T PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 PDF

    S-8209A

    Abstract: s8209a GRM188 8209A 2SA1037AK 2SC2412K 2SJ210 MCR03 S-812C S-8211D
    Text: CMOS IC应用手册 S-8209A系列的应用示例 Rev.1.3_00 S-8209A系列是带电量平衡功能的电池保护用IC。 本应用手册是说明有关使用S-8209A系列的具有代表性的电路连接示例的参考资料。 有关产品的详情和规格，请确认该产品的数据表。


    Original     		S-8209A S-8209AIC S-8209A s8209a GRM188 8209A 2SA1037AK 2SC2412K 2SJ210 MCR03 S-812C S-8211D PDF

    18650 charger

    Abstract: 18650* battery RCO1 20 PIN IC 2SJ210 2SA1037AK 2SC2412K GRM188 MCR03 18650 c1 S-8211D
    Text: CMOS IC Application Note S-8209A Series Usage Guidelines Rev.1.3_00 The S-8209A Series is a battery protection IC with the cell-balance function. This application note is guideline on the typical connection examples when using the S-8209A Series for applications.


    Original     		S-8209A S-8209A 18650 charger 18650* battery RCO1 20 PIN IC 2SJ210 2SA1037AK 2SC2412K GRM188 MCR03 18650 c1 S-8211D PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01 PDF