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    SSM3K329R Search Results

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    SSM3K329R Price and Stock

    Toshiba America Electronic Components SSM3K329R,LF

    MOSFET N CH 30V 3.5A 2-3Z1A
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    DigiKey SSM3K329R,LF Cut Tape 334 1
    • 1 $0.42
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    SSM3K329R,LF Digi-Reel 334 1
    • 1 $0.42
    • 10 $0.259
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    SSM3K329R,LF Reel 3,000
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    • 10000 $0.09177
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    Bristol Electronics SSM3K329R,LF 1,856
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    TTI SSM3K329R,LF Reel 3,000
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    • 10000 $0.07
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    Ameya Holding Limited SSM3K329R,LF 108,311
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    Toshiba America Electronic Components SSM3K329R,LF(T

    Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F T/R
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    Verical SSM3K329R,LF(T 4,660 190
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    Newark SSM3K329R,LF(T Cut Tape 12,940 5
    • 1 $0.476
    • 10 $0.366
    • 100 $0.174
    • 1000 $0.138
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    SSM3K329R,LF(T Reel 3,000
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    • 10000 $0.084
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    Chip1Stop SSM3K329R,LF(T Cut Tape 4,660
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    • 100 $0.132
    • 1000 $0.0921
    • 10000 $0.0615
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    EBV Elektronik SSM3K329R,LF(T 17 Weeks 3,000
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    Toshiba America Electronic Components SSM3K329R,LF(B

    Trans MOSFET N-CH Si 30V 3.5A 3-Pin SOT-23F T/R
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    Verical SSM3K329R,LF(B 1,110 397
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    • 1000 $0.1842
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    Quest Components SSM3K329R,LF(B 888
    • 1 $0.76
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    • 100 $0.342
    • 1000 $0.228
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    TME SSM3K329R,LF(B 5
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    • 10 $0.147
    • 100 $0.106
    • 1000 $0.095
    • 10000 $0.088
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    Toshiba America Electronic Components SSM3K329R

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    Ameya Holding Limited SSM3K329R 4,092
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    Win Source Electronics SSM3K329R 275,000
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    • 1000 $0.127
    • 10000 $0.105
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    Toshiba America Electronic Components SSM3K329RLF(T

    Trans MOSFET N-CH 30V 3.5A 3-Pin SOT-23F (Alt: SSM3K329R,LF(T)
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    Avnet Asia SSM3K329RLF(T 24 Weeks 3,000
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    Win Source Electronics SSM3K329RLF(T 275,200
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    • 1000 $0.1508
    • 10000 $0.1248
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    SSM3K329R Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3K329R Toshiba Japanese - Transistors - Mosfets Original PDF
    SSM3K329R Toshiba Transistors - Mosfets Original PDF
    SSM3K329R,LF Toshiba SSM3K329R - MOSFET, SOT23F Original PDF

    SSM3K329R Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K329R OT-23F PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R Power Management Switch Applications High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K329R OT-23F PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K329R PDF

    ssm3k329r

    Abstract: 86VDD
    Text: SSM3K329R 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K329R ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm +0.08 • 1.8V 駆動です • オン抵抗が低い : RDS ON = 289mΩ (max) (@VGS = 1.8V)


    Original     		SSM3K329R OT-23F ssm3k329r 86VDD PDF

    ssm3k329r

    Abstract: No abstract text available
    Text: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm +0.08 0.05 M A • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V)


    Original     		SSM3K329R ssm3k329r PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K329R TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K329R ○ Power Management Switch Applications ○ High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS ON = 289 mΩ (max) (@VGS = 1.8 V) : RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V)


    Original     		SSM3K329R PDF

    Untitled

    Abstract: No abstract text available
    Text: SSM3K329R 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM3K329R ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 1.8V 駆動です • オン抵抗が低い : RDS ON = 289mΩ (max) (@VGS = 1.8V)


    Original     		SSM3K329R PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 PDF

    toshiba laptop charging CIRCUIT diagram

    Abstract: TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120
    Text: Semiconductor Catalog Mar. 2013 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 5


    Original     		BCE0082H toshiba laptop charging CIRCUIT diagram TPC8123 TPH1400ANH TPCA8047-H TPC 8127 TPC8123 cross reference SSM3J328R SSM3J334R TPC8120 PDF

    TK12A10K3

    Abstract: tk12a10k TK33A60V TPCA*8065 TK40E10K3 SSM6K407TU TPCA*8064 tk6a65d equivalent TPCA*8036 TK100G10N1
    Text: Semiconductor Catalog 2012-3 MOSFETs SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes. 4


    Original     		PDF

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A PDF

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


    Original     		USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05 PDF

    *45F122

    Abstract: GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322
    Text: 東芝半導体製品総覧表 2010 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		SCJ0004O SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 *45F122 GT30f124 *30g122 *30f124 IGBT GT30F124 GT30J124 GT45F122 GT30F123 TPCA*8023 GT50N322 PDF