lucent photodetector
Abstract: 7495 pin configuration photodetector photodetectors D171C004BAA D171C004BAF D171C004CAN TR-NWT-000468 Diode BA 148
Text: Advance Data Sheet March 1999 D171-Type FastLight PIN Photodetectors Features The D171-Type PIN Photodetectors feature a rear-illuminated planar diode structure with a low-capacitance 4-mil active area for maximum responsivity and speed. • Low-profil e, 4-lead mini-DIL pa ckage
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D171-Type
TA-NWT-983
DS99-166LWP
DS99-091LWP)
lucent photodetector
7495 pin configuration
photodetector
photodetectors
D171C004BAA
D171C004BAF
D171C004CAN
TR-NWT-000468
Diode BA 148
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Untitled
Abstract: No abstract text available
Text: ESDAULC5-1BF4 Low clamping and ultra low capacitance single line bidirectional ESD protection Datasheet - production data Applications Where transient over voltage protection in ESD sensitive equipment is required, such as: • Smartphones, mobile phones and accessories
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DocID025890
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 1 3 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Very high speed switching series • Tail-less switching off 2 3 3 1 2 1 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF 600 V, 40 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series • Tail-less switching off 2 3 3 1 2 1 TO-247 • Low saturation voltage: VCE sat = 1.8 V (typ.)
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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GW40V60DF
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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PDF
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
GW40V60DF
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Untitled
Abstract: No abstract text available
Text: STGW40V60DF STGWT40V60DF Trench gate field-stop IGBT, V series 600 V, 40 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE sat = 1.8 V (typ.) @ IC = 40 A 2 • Tight parameters distribution
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STGW40V60DF
STGWT40V60DF
O-247
DocID024402
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
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bc 7-25 pnp
Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Text: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K
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1N914
1N4148
1N4150
1N4565
1N4565A
1N4566
1N4566A
1N4570
1N4570A
1N4571
bc 7-25 pnp
transistor bc 7-25
transistor 724
731 zener diode
transistor B 722
transistor Bc 2n2222
transistor BC 176
MPS6521
transistor 2N5952
TP2222A transistor
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Untitled
Abstract: No abstract text available
Text: O^OSD SERIES EVAR EXPONENTIAL VARACTOR 1M220 - 1M250 1T220 - 1T250 D0220 - D0250 fo r FREQUENCY-VOLTAGE LINEAR TUNING electronics^ Th e MSI Series 220 EV AR exponential varactor tuning diodeB feature a 7:1 mi ni mu m capa ci ta nc e tuni ng ratio from 0.5 to 10 volts for wi de
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1M220
1M250
1T220
1T250
D0220
D0250
MSI-123
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BB729
Abstract: E711
Text: ITT SEMICOND/ INTERMETALL blE D • mjfl5711 GGOaia? 714 M I S I BB729 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the whole range of VHF CTV tuners. m a x 1.35 - T ”' r ^ r .1 -rmm 0 25
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BB729
QQQ31Ã
BB729
E711
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5E DIODE
Abstract: ND5051-3A ND5051-5E L427 microwave sensors RF Microwave schottky Diode mixer ND5051-3G noise diode
Text: NEC N E C / CALIFORNIA 15E D • b427414 OOOl'ilM 5 ■ X TO K-BAND G aAs SCHOTTKY BARRIER MIXER DIODE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B T Y P at f = 10 G H z SYM BO LS U N IT S R A T IN G S
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L427414
ND5051-3A
ND5051-3G
ND5051-5E
ND5051-3A
ND5051
ND5051-3A,
ND5051-3G,
5E DIODE
ND5051-5E
L427
microwave sensors
RF Microwave schottky Diode mixer
noise diode
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BZX8SC15
Abstract: No abstract text available
Text: DO-41 Zener Diodes 1.3 W CPU Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified) Type No. rZT v ZT at lCT rZK at min nom max (V) !z k a t 'z K max (Ohm) (mA) max (Ohm) (mA) Temp. Coeff. of Zener Voltage typ (%/°C) @ lF Ir a* Vr Ta 25°C
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DO-41
BZX85C2V7
BZX85C3V0
BZX85C3V3
BZX85C
u5-50
BZX8SC15
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Untitled
Abstract: No abstract text available
Text: • fl235b05 Q O ^ Q O b AM? ■ SIEMENS PROFET BTS 620 L1 Smart Two Channel Highside Power Switch • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Reverse battery protection1)
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fl235b05
-220AB/7
BTS620L1
Q67060-S6301-A2
GPT05167
fl235bD5
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Untitled
Abstract: No abstract text available
Text: LT-3/94 electronics EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - XT250 D022D - D0250 FREQUENCY-VOLTAGE LINEAR TUNING inc. - X " — 1— v. D024I 's \ N K323Í — In axial leaded glass DO-7, in the surface mount MSI Case 1M alumina substrate with epoxy encapsulation or in the surface mount MSI-123
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LT-3/94
1M220
1M250
1T220
XT250
D022D
D0250
D024I
MSI-123
OD123
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N755
Abstract: 1N74I
Text: 1N 746 thru 1N 759A and 1N 4 370 thru 1N 4372A DO-7 liifiwuiAifif /Vvm imcraserm burp. M ' c u s n u f ca ll T o r me 6 02 941-6300 1% and 2% V E R S IO N S “C ” and “ D” A V A IL A B L E SILICON 400 mW ZENER DIODES FE A T U R E S • Z E N E R V O L T A G E 2.4V to 12.0V
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MIL-S-19500/127
1N746A
1N759A
0D037bl
00037bE
N755
1N74I
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RD6120
Abstract: No abstract text available
Text: RHRD6120, RHRD6120S fil IH A R R IS U U S E M I C O N D U C T O R 6A, 1200V Hyperfast Diodes March 1995 Features Package • Hyperfast with Soft R eco • Operating Tem p eratu
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RHRD6120,
RHRD6120S
O-251
RHRD6120
TA49058)
RHRD6120S
RD6120
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diode 1NU
Abstract: equivalent of diode 1Nu diode 1NU 0 b 1NU 7 1nu toshiba
Text: TOSHIBA -CDISCRETE/OPTO} Sb DE [ ^ G ^ a S D POWER REGULATOR FOR LINE OPERATED TV APPLICATIONS. DD077Û1 ^ Unit in mm 02&OMAX. FEATURES: a 1.0 MAX . Excellent Vide Safe Operating Area c . 100 W.S at Tc=25°C , 0 1 .0 . Included Abalanche Diode. : Vz=55±10V
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DD077
VCB777
diode 1NU
equivalent of diode 1Nu
diode 1NU 0 b
1NU 7
1nu toshiba
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SIM 900 TE C
Abstract: chn 807 Diode BA 148
Text: Product Brief April 1998 group Lucent Technologies Bell Labs Innovations L7583A/B/C/D Line Card Access Switch Features • Sm all size/surface-m ount packaging ■ M onolithic IC reliability ■ Low im pulse noise ■ M ake-before-break, break-before-m ake operation
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L7583A/B/C/D
L7583A/B
PN98-108ALC
SIM 900 TE C
chn 807
Diode BA 148
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Untitled
Abstract: No abstract text available
Text: NEC N E C / CALIFORNIA 15 E D • b427414 7 OOOl'ilM 5 ■ X TO K-BAND GaAs SCHO TTKY BA RRIER MIXER DIO DE ND5051-3A ND5051-3G ND5051-5E FEATURES ABSOLU TE MAXIMUM RATINGS Ta • L O W N O IS E F IG U R E : 5 d B TYP at f = 10 GHz SYM BO LS U N IT S R A T IN G S
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b427414
ND5051-3A
ND5051-3G
ND5051-5E
ND5051
D5051-3A
5051-3G
D5051-5E
ND5051-3A,
ND5051-3G,
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640CT
Abstract: m3175 645CT
Text: PBYR635CT PBYR640CT PBYR645CT SCHOTTKY-BARRIER DOUBLE RECTIFIER DIO DES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence of stored charge. They are intended for use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
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PBYR635CT
PBYR640CT
PBYR645CT
M3177
M1246
640CT
m3175
645CT
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Untitled
Abstract: No abstract text available
Text: 2SK1948 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current No Secondary Breakdown Suitable for Sw itching regulator, M otor Control Outline 716 2SK1948
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2SK1948
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F10014
Abstract: ECL Handbook F10506 ECL 200 F10105 f10107 F10-100 f10504
Text: F10014 ACTIVE TERMINATOR F10K VOLTAGE COMPENSATED ECL G E N ER A L D ESC R IP TIO N — The F10014 Is a voltage com pensated ECL circuit w h ich replaces discrete diode clam ping circuits at considerable reduction in cost, board space and power dissipation. It operates from the standard - 5 . 2 V ECL
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F10014
F10014
F10118
F10518
F10119
F1Q519
F10121
F10521
ECL Handbook
F10506
ECL 200
F10105
f10107
F10-100
f10504
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