FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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USER MANUAL ESH2-Z5
Abstract: MANUAL ESH2-Z5 ESH2-Z5 IFAXDM1414 RS ESH2-Z5 Kyoritsu KNW-242 ps2 controller adaptor to usb MS-6728 E5XKB5121WTH0110 KNW-242
Text: PEP Testing Laboratory 12-3Fl, No. 27-1, Lane 169, Kang-Ning St., Hsi-Chih, Taipei Hsien, Taiwan, R. O. C. TEL: 886-2-26922097 FAX: 886-2-26956236 NVLAP LAB CODE: 200097-0- REPORT NO. :E940698 FCC DoC TEST REPORT According to FCC Part 15 Test Κ Κ Κ Item
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12-3Fl,
E940698
UC232R
G58QB
USER MANUAL ESH2-Z5
MANUAL ESH2-Z5
ESH2-Z5
IFAXDM1414
RS ESH2-Z5
Kyoritsu KNW-242
ps2 controller adaptor to usb
MS-6728
E5XKB5121WTH0110
KNW-242
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7105
Abstract: 035H IRFPE30
Text: PD - 95198 IRFP440PbF • Lead-Free www.irf.com 1 4/27/04 IRFP440PbF 2 www.irf.com IRFP440PbF www.irf.com 3 IRFP440PbF 4 www.irf.com IRFP440PbF www.irf.com 5 IRFP440PbF 6 www.irf.com IRFP440PbF TO-247AC Package Outline Dimensions are shown in millimeters inches
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IRFP440PbF
O-247AC
IRFPE30
7105
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95198 IRFP440PbF • Lead-Free Document Number: 91228 4/27/04 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228
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IRFP440PbF
O-247AC
IRFPE30
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91228
Abstract: 035H IRFPE30
Text: PD - 95198 IRFP440PbF • Lead-Free Document Number: 91228 4/27/04 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228
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IRFP440PbF
O-247AC
IRFPE30
91228
035H
IRFPE30
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Transistor Mosfet N-CH 400V 40A
Abstract: AN-994 IRFR120 R120 Transistor Mosfet N-CH 200V 40A IRF 548
Text: PD - 95192 IRG4RC10SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1V typ @ 2A • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4
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IRG4RC10SDPbF
O-252AA
Transistor Mosfet N-CH 400V 40A
AN-994
IRFR120
R120
Transistor Mosfet N-CH 200V 40A
IRF 548
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ge-20 transistor
Abstract: IRG4PH50UPBF 035H IRFPE30 960V
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
ge-20 transistor
IRG4PH50UPBF
035H
IRFPE30
960V
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035H
Abstract: IRFPE30
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247AC
IRFPE30
035H
IRFPE30
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Untitled
Abstract: No abstract text available
Text: PD - 95196A IRF7328PbF HEXFET Power MOSFET lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿ Available in Tape & Reel lÿ Lead-Free VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from
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5196A
IRF7328PbF
EIA-481
EIA-541.
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F7101
Abstract: IRF7101 IRF7328PBF 2675 so8
Text: PD - 95196A IRF7328PbF HEXFET Power MOSFET lÿÿTrench Technology lÿÿUltra Low On-Resistance lÿ Dual P-Channel MOSFET lÿ Available in Tape & Reel lÿ Lead-Free VDSS -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from
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5196A
IRF7328PbF
EIA-481
EIA-541.
F7101
IRF7101
IRF7328PBF
2675 so8
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Equivalent IRF 740
Abstract: IRF7341PbF HEXFET Power MOSFET HEXFET SO-8 IRF Power MOSFET code marking EIA-541 IRF7101
Text: PD -95199 IRF7341PbF Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description HEXFET Power MOSFET l S1 1 8 D1 G1 2 7 D1 S2 3 6 D2
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IRF7341PbF
EIA-481
EIA-541.
Equivalent IRF 740
IRF7341PbF
HEXFET Power MOSFET
HEXFET SO-8
IRF Power MOSFET code marking
EIA-541
IRF7101
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IRF7101
Abstract: z 409
Text: PD - 95196 IRF7328PbF HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance ● Dual P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free ● VDSS ● -30V RDS on max ID 21mΩ@VGS = -10V -8.0A 32mΩ@VGS = -4.5V -6.8A Description New trench HEXFET® Power MOSFETs from
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IRF7328PbF
EIA-481
EIA-541.
IRF7101
z 409
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Untitled
Abstract: No abstract text available
Text: PD - 95191 IRG4PH50UPbF Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than
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IRG4PH50UPbF
O-247AC
O-247in
IRFPE30
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50102 IK 07
Abstract: DIN1451-1E DIN1451-3E NBR70
Text: SCHURTER GmbH D – 79346 Endingen www.schurter.com Product manual Vandal-proof MSM switch Contents CONTENTS . 1
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B5218
Abstract: uc 1201a 14001-1
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. N orth C entral N o rth w e st N orth E a s t 20 M all R oad S u ite 410 B u rlin g to n, M A 01803 617 2 7 3 -4 8 88 F A X (6 1 7 )2 7 3 -9 3 6 3 901 W a rre n v ille R oad S uite 120 Lisle, IL 6 0 5 3 2 -13 5 9
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251-B574
B5218
uc 1201a
14001-1
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jd 1803 b 107
Abstract: jd 1803 IC jd 1803 19 B sung wei jd 1803 b jd 1803 b 106 94-4980 bay trail l samsung 943 ky 708
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest Northeast 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 119 Russell Street
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Clin-1205
jd 1803 b 107
jd 1803 IC
jd 1803 19 B
sung wei
jd 1803 b
jd 1803 b 106
94-4980
bay trail l
samsung 943
ky 708
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CH-5430
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.SA North Central Northwest Northeast 1 19 R ussell Street Littleton, M A 0 1 4 6 0 TE L: 5 0 8 4 8 6 -0 7 0 0 FA X : (5 0 8 ) 4 8 6 -8 2 0 9 3 0 0 Park Boulevard Suite 2 1 0 Itasca, IL 6 0 1 4 3 -2 6 3 6 TEL: (7 0 8 ) 7 7 5 -1 0 5 0
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124th
105th
CH-5430
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240-22
Abstract: 84107
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central
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516J-273-5500
240-22
84107
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sung wei
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708)775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest
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27408
Abstract: MSC 501 302 D3053 26138
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. Northeast North Central Northwest 119 Russell S treet Littleton, MA 01460 TEL: 508 486-0700 FAX: (508) 486-8209 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: (708) 775-1050 FAX: (708) 775-1058 3655 North First Street
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124th
516J-273-5500
105th
27408
MSC 501 302
D3053
26138
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SAMSUNG 834
Abstract: shing wai k27419 NA76 st 8843 D8024 ITT 813
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North East North Central Northwest 20 Mall Road Suite 410 Burlington, MA 01803 Tel: 617 273-4888 Fax: (617) 273-9363 300 Park Boulevard Suite 210 Itasca. IL 60143-2636 Tel: (708)775-1050 Fax: (708) 775-1058 3655 North First Street
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154th
W17194
SAMSUNG 834
shing wai
k27419
NA76
st 8843
D8024
ITT 813
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14624
Abstract: Intelatech 89324 SW 602 BP
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San Jose, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 South Central Southwest
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Deutsche Post
Abstract: sung wei 105th JTA Research
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 tasca, IL 60143-2636 TEL: (708 775-1050 FAX: (708)775-1058 3655 North First Street San Josa, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 Southwest South Central
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ky 708
Abstract: D-71272 bay trail l BC 546 203B
Text: SAMSUNG SEMICONDUCTOR SALES OFFICES-U.S.A. North Central Northwest 300 Park Boulevard Suite 210 Itasca, IL 60143-2636 TEL: 708 775-1050 FAX: (708) 775-1058 3655 North First Street San José, CA 95134 TEL: (408) 954-7000 FAX: (408) 954-7883 south Central
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