stn3p6f6
Abstract: No abstract text available
Text: STN3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET VI DeepGATE™ Power MOSFET in a SOT-223 package Datasheet — production data Features Type VDSS RDS on max ID STN3P6F6 60 V 0.16 Ω @ 10 V 3A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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OT-223
OT-223
stn3p6f6
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Untitled
Abstract: No abstract text available
Text: STN3P6F6 P-channel 60 V, 0.13 Ω typ., 3 A STripFET VI DeepGATE™ Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 Order code VDSS RDS on max ID STN3P6F6 60 V 0.16 Ω @ 10 V 3A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on)
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OT-223
OT-223
DocID023758
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Untitled
Abstract: No abstract text available
Text: LM4041 Precision micropower shunt voltage reference Datasheet - production data Description SOT23-3L The LM4041 is a micropower shunt voltage reference, providing a stable 1.225 V output voltage, with an initial accuracy of 0.1% @ 25 °C and a low temperature coefficient. Available in
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LM4041
OT23-3L
LM4041
OT323-5L
OT23-3L
OT323-5L
DocID018817
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m4412
Abstract: M44129
Text: Bulletin PD-20480 rev. F 05/05 20CJQ100 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Ratings and Characteristics Characteristics 20CJQ100 Units IF AV Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 µs sine 380 A VF 0.67 V waveform TJ @ 1 Apk, TJ = 125°C
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PD-20480
20CJQ100
OT-223
20CJQ100
m4412
M44129
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n3pf06
Abstract: MOSFET MARKING ST JESD97 STN3PF06
Text: STN3PF06 P-channel 60V - 0.18Ω - 2.5A - SOT-223 STripFET II Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STN3PF06 60V < 0.20Ω 2.5A • Extremely dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 2 1
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STN3PF06
OT-223
n3pf06
MOSFET MARKING ST
JESD97
STN3PF06
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N2NF10
Abstract: marking codes N2NF10 transistors sot-223 n2nf STN2NF10 JESD97 N2NF10 SOT223 ST MARKING 175 SOT
Text: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor
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STN2NF10
OT-223
N2NF10
N2NF10
marking codes N2NF10 transistors sot-223
n2nf
STN2NF10
JESD97
N2NF10 SOT223
ST MARKING 175 SOT
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N2NF10
Abstract: No abstract text available
Text: STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET General features Type VDSS RDS on ID STN2NF10 100V < 0.26Ω 2.4A 2 Description 1 This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”
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STN2NF10
OT-223
STN2NF10
OT-223
N2NF10
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Untitled
Abstract: No abstract text available
Text: ST715 High input voltage, 85 mA LDO linear regulator Datasheet - production data Applications • Mobile phones • Personal digital assistant PDAs SOT23-5L • Cordless phones and similar battery-powered systems DFN8 (3x3 mm) Description The ST715 is a high voltage, ultra low quiescent
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ST715
OT23-5L
ST715
OT323-5L
DocID14414
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3n40k
Abstract: STN3N40K3 3N40K3 stn3n40k 3N40 Power MOSFET SOT-223
Text: STN3N40K3 N-channel 400 V, 3 Ω, 3 A SOT-223 SuperMESH3 Power MOSFET Preliminary data Features Type VDSS RDS on max ID PW STN3N40K3 400 V < 3.3 Ω 3A 3.3 W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance
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STN3N40K3
OT-223
3n40k
STN3N40K3
3N40K3
stn3n40k
3N40
Power MOSFET SOT-223
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Untitled
Abstract: No abstract text available
Text: ST715 High input voltage, 85 mA LDO linear regulator Datasheet - production data Applications • Mobile phones • Personal digital assistant PDAs SOT23-5L • Cordless phones and similar battery-powered systems DFN8 (3x3 mm) Description The ST715 is a high voltage, ultra low quiescent
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ST715
OT23-5L
ST715
OT323-5L
DocID14414
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diode power 1404
Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
Text: MMBD1401 / 1403 / 1404 / 1405 Discrete POWER & Signal Technologies N MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 1 2 2 NC 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode
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MMBD1401
OT-23
MMBD1404
MMBD1403
MMBD1405
DO-35
OT-23
diode power 1404
MMBD1404
MMBD1405
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD UZ1086 LINEAR INTEGRATED CIRCUIT 1 .5 A ADJ U ST ABLE/FI X ED LOW DROPOU T LI N EAR REGU LAT OR DESCRI PT I ON The UTC UZ1086 and UZ1086-1.2V, 1.8V, 2.5V, 2.85V, 3.3V and 5V are low dropout three-terminal regulators with 1.5A output current
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UZ1086
UZ1086
UZ1086-1
QW-R102-008.
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Untitled
Abstract: No abstract text available
Text: STN3N45K3 N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 3 Order code VDSS RDS on max ID Pw STN3N45K3 450 V <4Ω 0.6 A 3W • 100% avalanche tested • Extremely high dv/dt capability
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STN3N45K3
OT-223
OT-223
AM01476v1
DocID024888
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sot223 device Marking
Abstract: 20CJQ100 40HFL40S02 EIA-541 IRFP460 2CJQJ
Text: Bulletin PD-20480 rev. E 01/03 20CJQ100 SCHOTTKY RECTIFIER 2 Amp SOT-223 Description/Features Major Ratings and Characteristics Characteristics 20CJQ100 Units IF AV Rectangular 2.0 A VRRM 100 V IFSM @ tp = 5 µs sine 380 A VF 0.67 V waveform @ 1 Apk, TJ = 125°C
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PD-20480
20CJQ100
OT-223
20CJQ100
EIA-418-1.
sot223 device Marking
40HFL40S02
EIA-541
IRFP460
2CJQJ
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diode power 1404
Abstract: MMBD1401 MMBD1403 MMBD1404 MMBD1405
Text: MMBD1401 / 1403 / 1404 / 1405 CONNECTION DIAGRAMS 3 3 1401 3 1403 29 3 1 2 NC 1 2 1 2 3 3 1404 1405 2 SOT-23 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings*
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MMBD1401
OT-23
MMBD1404
MMBD1403
MMBD1405
diode power 1404
MMBD1404
MMBD1405
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DIODE 33 25
Abstract: diode power 1404
Text: CONNECTION DIAGRAMS 3 3 1401 3 3 1403 29 3 1 2 SOT-23 SOT-23 2 NC 1 2 1 2 3 3 1404 1405 2 1 MARKING MMBD1401 29 MMBD1404 MMBD1403 32 MMBD1405 1 33 34 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 1H. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1401
OT-23
OT-23
MMBD1404
MMBD1403
MMBD1405
DIODE 33 25
diode power 1404
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1403A
Abstract: sot23-3 wa 1405A MMBD1401A a32 sot23-3 DIODE A34 wa sot23-3 R017 MMBD1403A MMBD1404A
Text: CONNECTION DIAGRAMS 3 3 1401A 1403A A29 3 2 NC 1 1 2 1 2 3 3 1404A 2 SOT-23 3 MARKING MMBD1401A A29 MMBD1404A A33 MMBD1403A A32 MMBD1405A A34 1 1405A 1 2 1 2 High Voltage General Purpose Diode Sourced from Process 2V. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1401A
MMBD1404A
MMBD1403A
MMBD1405A
1403A
sot23-3 wa
1405A
a32 sot23-3
DIODE A34
wa sot23-3
R017
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16W SOT-323 PLASTIC PACKAGE 3 Pin Configurat ion 1 = ANODE 2 = NC 3 = CATHODE 1 2 Marking BAS16W = A6 High Switching Diode
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BAS16W
OT-323
C-120
BAS16W
Rev090206E
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STPS4045CW
Abstract: STPS4045CT STPS4045C a2kk
Text: STPS4045C Power Schottky rectifiers Features ● Very small conduction losses ● Negligible switching losses ● Extremely fast switching ● Low thermal resistance ● Avalanche capability specified ● ECOPACK 2 compliant component STPS4045CT A1 K A2
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STPS4045C
STPS4045CT)
O-220AB
STPS4045CT
O-247
O-220AB
O-247
STPS4045CW
STPS4045CW
STPS4045CT
STPS4045C
a2kk
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STPS4045CT
Abstract: No abstract text available
Text: STPS4045C Power Schottky rectifiers Features ● Very small conduction losses ● Negligible switching losses ● Extremely fast switching ● Low thermal resistance ● Avalanche capability specified ● A1 K A2 ECOPACK 2 compliant component STPS4045CT
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STPS4045C
STPS4045CT)
O-220AB
STPS4045CT
O-247
O-220AB
O-247
STPS4045CW
STPS4045CT
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD LD1985 LINEAR INTEGRATED CIRCUIT V ERY LOW DROP AN D LOW N OI SE V OLT AGE REGU LAT OR LOW ESR CAP. COM PAT I BLE, WI T H I N H I BI T FU N CT I ON ̈ DESCRI PT I ON The UTC LD1985 is a 150mA fixed output voltage regulator. The
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LD1985
LD1985
150mA
QW-R102-021
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444p
Abstract: No abstract text available
Text: I IN R 4ÔSSMSS GGISTÌM SOT International [rag Rectifier PD-9.904 IRLZ24S HEXFET Power M O S FE T INTERNATIONAL R E C T I F I E R Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at V gs=4V & 5V 175°C Operating Temperature
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IRLZ24S
444p
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BCW65C
Abstract: FERRANTI ELECTRONICS transistors DEVICE MARKING BF197P BCV71 BCV72 BCW29 BCW30 BCW31 BCW32
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW 29 BCW 30 BCW31 BCW 32 BCW 33 BCW 60A BCW 60B BCW 60C BCW 60D B CW 61A BCW 61B BCW 61C B CW 61D B CW 65A
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OT-23
BCV71
BFQ31
BCV72
BFQ31A
BCW29
BFS20
BCW30
BCW31
BCW32
BCW65C
FERRANTI ELECTRONICS
transistors DEVICE MARKING
BF197P
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TOP-31
Abstract: top31
Text: STPS6045CP/CPI/CW POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 45 V Tj (max) 175 °C (max) 0.63 V Vf Insulated TOP-3I STPS6045CPI FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREME FAST SWITCHING
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STPS6045CP/CPI/CW
STPS6045CPI
OP-31
OT-93,
O-247,
TOP-31
top31
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