Untitled
Abstract: No abstract text available
Text: EU REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGE DIMENSIONS — DESCRIPTION The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the
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OPB706A/B/C
OPB7C16A/B/C.
100mA,
000b3b4
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Reflective Optical Sensor
Abstract: REFLECTIVE OBJECT SENSOR OPB706A OPB706B Reflective Optical Sensor with Transistor Output OPB706C
Text: EO p p .w . « ^ r j REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGED IMENSIONS DESCRIPTION T h e O P B 706 A /B /C reflective s e n s o rs co n sist of an infrared emitting d io d e an d an N P N silicon — .083 2.11 p hototransisto r m o u n ted s id e b y sid e in a b la ck plastic
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OPB706A/B/C
OPB706A/B/C.
OPB706C
100/xA,
Reflective Optical Sensor
REFLECTIVE OBJECT SENSOR
OPB706A
OPB706B
Reflective Optical Sensor with Transistor Output
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Untitled
Abstract: No abstract text available
Text: REFLECTIVE OBJECT SENSOR OPTOELECTRONICS OPB7Q6A/B/C PACKAGE DIMENSIONS — OPTICAL CENTERLINE — .083 2.11 - .240 (6.10) L — .173(4.39) P E S d H E IIU N The OPB706A/B/C reflective sensors consist of an infrared emitting diode and an NPN silicon phototransistor mounted side by side in a black plastic
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OPB706A/B/C
OPB706A/B/C.
OPB706A/B/C
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