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    ST93C67 Search Results

    ST93C67 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ST93C67 STMicroelectronics 4K (256 x 16 OR 512 x 8) SERIAL MICROWIRE EEPROM Original PDF
    ST93C67B1 SGS-Thomson EEPROM Serial Original PDF
    ST93C67B1TR STMicroelectronics 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C67B3 SGS-Thomson EEPROM Serial Original PDF
    ST93C67B3TR STMicroelectronics 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C67B6 SGS-Thomson EEPROM Serial Original PDF
    ST93C67B6TR STMicroelectronics 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C67CM1TR STMicroelectronics 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C67CM3TR STMicroelectronics 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C67CM6TR STMicroelectronics 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM Original PDF
    ST93C67M1 SGS-Thomson EEPROM Serial Original PDF
    ST93C67M3 SGS-Thomson EEPROM Serial Original PDF
    ST93C67M6 SGS-Thomson EEPROM Serial Original PDF

    ST93C67 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93C66 ST93C67 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		ST93C66 ST93C67 ST93C67 M93C66 ST93C66. PDF

    M93C66

    Abstract: ST93C66 ST93C67
    Text: ST93C66 ST93C67 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with


    Original     		ST93C66 ST93C67 ST93C66 ST93C67 M93C66 M93C66 PDF

    ST93C66

    Abstract: ST93C67
    Text: ST93C66 ST93C67C SERIAL MICROWIRE BUS 4K 256 x 16 or 512 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 256 x 16 or 512 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with AUTO-ERASE


    Original     		ST93C66 ST93C67C ST93C66 ST93C67 ST93C67C ST93C66. PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256 PDF

    s2914a

    Abstract: ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45
    Text: データシート マイクロワイヤー TMタイプ . SCIタイプ（Serial Communication Interface） . I2CTMタイプ .


    Original     		AK93CXX SCIAK64XX DACEEPROMAK98XX ST25C16 ST25W16 NM24C17LZ AK6010A AT24C32 CAT24C32 CAT24WC32 s2914a ak6416af s2914 ATMEL 24C32A S-29255 AK6416A AK93C12A national semiconductor cmos ATMEL 93C86 93c45 PDF

    256k x8 SRAM 5V

    Abstract: ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09
    Text: MEMORY PRODUCTS SELECTOR GUIDE A D) OTP Memory - 5V range Type M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 M27C801 Size 64K 256K 256K 512K 1 Meg 1 Meg 2 Meg 4 Meg 4 Meg 4 Meg 8 Meg Organisation Access Time ns)


    Original     		M27C64A M27C256B M87C257 M27C512 M27C1001* M27C1024* M27C2001* M27C405* M27C4001 M27C4002 256k x8 SRAM 5V ST95080 rom 1K x8 mod 10 asynchronous ST1335 M28V210 M6280 3.3 -35Y M48Z09 PDF

    M93C46BN1

    Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA


    Original     		M2716-1F1 M2716-1F6 M2716F1 M2716F6 M2732A-2F1 M2732AF1 M2732AF6 M2732A-3F1 M2764A-1F1 M2764A-20F1 M93C46BN1 PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93C66 ST93C67 SGS-THOMSON llllM JilLliM W Iiei 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS


    OCR Scan     		ST93C66 ST93C67 ST93C66 ST93C67 ST93C67are M93C66 150mil PDF

    Untitled

    Abstract: No abstract text available
    Text: w # SGS-THOMSON V # . WöfgMilLIKgTnsiOliiOögS ST93C66 ST93C67C SERIAL MICROW IRE BUS 4K 256 x 16 or 512 x 8 EEPROM • 1 MILLION ERASE/W RITE CYCLES, wfth 10 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 2 5 6 x 1 6 or 5 1 2 x 8 ■ BYTE/W ORD and ENTIRE MEMORY


    OCR Scan     		ST93C66 ST93C67C ST93C67C ST93C66. ST93Cithout PDF

    Untitled

    Abstract: No abstract text available
    Text: / T T S G S -T H O M S O N *7 # . ST93C66 ST93C67C SERIAL MICROWIRE BUS 4K 256 x 16 or 512 x 8 EEPROM • 1 MILLION ERASE/WRrTE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS


    OCR Scan     		ST93C66 ST93C67C ST93C67 150mil ST93C67C PDF

    ST93C66

    Abstract: ST93C67 RU110
    Text: S G S -IH O M S O N ST93C66 5 7 . ^a ^ ô [iLi© (Q)[ia(gS ST93C67C SERIAL MICROWIRE BUS 4K (256 x 16 or 512 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY


    OCR Scan     		ST93C66 ST93C67C ST93C67 ST93C67C ST93C66. ST93C66, RU110 PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS'THOMSON ST93C66 ST93C67C ^7# RfilOtg^OilLKgTOtoHDtgi SERIAL MICROWIRE BUS 4K 256 x 16 or 512 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 2 5 6 x 1 6 or 5 1 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS


    OCR Scan     		ST93C66 ST93C67C ST93C66 ST93C67 ST93C67C ST93C66, 7R2R237 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST93C66 ST93C67C SGS-THOMSON llllM JilLliM W Iiei 4K 256 x 16 or 512 x 8 SERIAL MICROWIRE EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION > DUAL ORGANIZATION: 256 x 16 or 512 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS


    OCR Scan     		ST93C66 ST93C67C ST93C66 ST93C67 ST93C67C M93C66 150mil ser67C PDF