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    STANFORD AMPLIFIER Search Results

    STANFORD AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    HA7-5137A-5 Rochester Electronics LLC HA7-5137 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA7-5221-5 Rochester Electronics LLC HA7-5221 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA2-5102-5 Rochester Electronics LLC HA2-5102 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC HA1-2542 - Operational Amplifier Visit Rochester Electronics LLC Buy

    STANFORD AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of


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    SCA-11 19dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of


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    SCA-11 SCA-11 19dBm 31mil PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of


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    100mW PDF

    188-114 DB 25 pin out

    Abstract: 120C AX RF amplifier IC
    Text: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of


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    100mW 20dBm 188-114 DB 25 pin out 120C AX RF amplifier IC PDF

    100C

    Abstract: SCA-11
    Text: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of


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    SCA-11 SCA-11 19dBm 31mil 100C PDF

    Untitled

    Abstract: No abstract text available
    Text: ßäf Stanford M icrodevices SCA-1 Product Description Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable


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    100mW PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET M MIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable


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    SCA-11 SCA-11 19dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier


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    100mW PDF

    LM 344 IC

    Abstract: LM 344 H pin for lm 339 ic cy 5103
    Text: ¿3 Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of


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    100mW LM 344 IC LM 344 H pin for lm 339 ic cy 5103 PDF

    Untitled

    Abstract: No abstract text available
    Text: EJ Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of


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    SCA-11 19dBm SCA-11 0000C PDF

    sna476tr1

    Abstract: sna4 sna476
    Text: Stanford Microdevices Product Description SNA-476 Stanford Microdevices' SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V.


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    SNA-476 SNA-400) SNA-476 sna476tr1 sna4 sna476 PDF

    Untitled

    Abstract: No abstract text available
    Text: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


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    SCA-14 SCA-14 100mA 36dBm. 100mW PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SMM-208 Stanford Microdevices' SM M -208 is a gallium arsenide monolithio-microwave-integrated circuit M M IC amplifier housed in a low cost, surface-mountable ceramic package. Designed for operation in w ireless system s


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    SMM-208 28dBm 600mA PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 Stanford Microdevices Product Description SCA-5 Stanford M icrodevices’ SCA-5 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


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    29dBm. PDF

    Untitled

    Abstract: No abstract text available
    Text: É0 Stanford Microdevices Product Description SNA-586 Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V.


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    SNA-586 SNA-586 SNA-500) PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SMM-280-4 Stanford Microdevices' SMM-280-4 is a gallium arsenide monolithic-microwave-integrated circuit MMIC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier


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    SMM-280-4 SMM-280-4 36dBm 46dBm 3000mA 3600mA 1000mW PDF

    Untitled

    Abstract: No abstract text available
    Text: èSl Stanford Microdevices SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases


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    SCA-15 27dBm. PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SNA-387 Stanford Microdevices1 SNA-387 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 21 dB of gain when biased at 35mA and 4V. DC-3 GHz, Cascadable


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    SNA-387 SNA-300) SNA-387 PDF

    Untitled

    Abstract: No abstract text available
    Text: § Stanford Microdevices Product Description SMM-280-2 Stanford Microdevices’ SM M -280-2 is a gallium arsenide monolithic-microwave-integrated circuit M M IC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 2 Watt


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    SMM-280-2 33dBm 43dBm 1500mA 1800m PDF

    Untitled

    Abstract: No abstract text available
    Text: ßäf Stanford M icrodevices Product Description SCA-16 Stanford M icrodevices’ SCA-16 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases


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    SCA-16 28dBm. PDF

    SNA-587

    Abstract: ic 7710 SNA-587-TR1
    Text: Stanford Microdevices Product Description SNA-587 Stanford Microdevices’ SNA-587 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V, DC-3 GHz, Cascadable


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    SNA-587 SNA-500) SNA-587 18dBm ic 7710 SNA-587-TR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SCA-6 Stanford M icrodevices’ SCA-6 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ mance up to 3 GHz. The heterojunction increases break­


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    30dBm. PDF

    SNA-276

    Abstract: No abstract text available
    Text: gO Stanford Microdevices Product Description SNA-276 Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V.


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    SNA-276 SNA-200) SNA-276 CasA-276-TR1 SNA-276-TR2 SNA-276-TR3 -155C PDF

    SNA-576

    Abstract: No abstract text available
    Text: Stanford Microdevices Product Description SNA-576 Stanford Microdevices' SNA-576 is a GaAs monolithic broadband amplifier housed in a tow-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V, DC-3 GHz, Cascadable


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    SNA-576 SNA-500) SNA-576 Ampl36 -190C PDF