RC snubber
Abstract: snubber Snubber circuit Design
Text: Series connection of IGBTs Effective factors for voltage sharing: device characteristics driver static dynamic ∆ICES, ∆Tj ∆Tj, ∆Vgeth, ∆tdon, ∆tdoff, ∆Qrr - ∆Lwire , ∆ton, ∆toff Recommendations: use devices of one production lot smallest parameter deviations guaranteed
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IGBT 3kv
Abstract: OF IGBT igbts paralleling seperate
Text: Paralleling of IGBTs Effective factors for current sharing: static dynamic commutation inductance - ∆Lσ driver - ∆Lwire , ∆ton, ∆toff device characteristics ∆Vcesat, ∆Tj ∆Tj, ∆tdon, ∆tdoff Recommendations: symmetrical design of IGBT current paths identical stray inductances
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MOS Controlled Thyristor
Abstract: thyristor lifetime
Text: Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules Siddarth Sundaresan, Aye-Mya Soe, Ranbir Singh GeneSiC Semiconductor Inc. Dulles, VA 20152, USA Abstract— Silicon Carbide Anode Switched Thyristors ASTs overcome major limitations of conventional Si and SiC IGBT
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SiC BJT
Abstract: transistor 304
Text: Proceedings of The 25th International Symposium on Power Semiconductor Devices & ICs, Kanazawa 6-1 10 kV SiC BJTs – static, switching and reliability characteristics Siddarth Sundaresan, Stoyan, Jeliazkov, Brian Grummel, Ranbir Singh GeneSiC Semiconductor, Inc.
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12M6501
SiC BJT
transistor 304
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Untitled
Abstract: No abstract text available
Text: Proceedings of the 26th International Symposium on Power Semiconductor Devices & IC's June 15-19, 2014 Waikoloa, Hawaii Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Siddarth Sundaresan, Stoyan Jeliazkov, Hany Issa, Brian Grummel, Ranbir Singh
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IC1 723
Abstract: IGBT THEORY AND APPLICATIONS IGBT parallel DIM800DDM17-A000 AN5505 failure analysis IGBT DIM800DDM17
Text: AN5505 Application Note AN5505 Parallel Operation of Dynex IGBT Modules Application Note Replaces October 2001, version AN5505-1.2 AN5505-1.3 July 2002 INTRODUCTION IGBT modules can be connected in parallel to create a switch with a higher current rating. However, successful paralleling of
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AN5505
AN5505
AN5505-1
IC1 723
IGBT THEORY AND APPLICATIONS
IGBT parallel
DIM800DDM17-A000
failure analysis IGBT
DIM800DDM17
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73E05
Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
Text: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules
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0600G650100
73E05
73E-05
abb inverter protection
single phase igbt based inverter 200 amps circuit
97E-05
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pj 69 diode
Abstract: shottky barrier diode 100V 100A diode pj sic igbt 1000V 400 A failure analysis IGBT sic diode diode schottky 600v Cree SiC diode die 300C 600C
Text: Characterisation of 4H-SiC Schottky Diodes for IGBT Applications C. M. Johnson*, M. Rahimo*, N. G. Wright*, D. A. Hinchley*, A. B. Horsfall*, D. J. Morrison*, A. Knights* *Department of Electrical and Electronic Engineering University of Newcastle Newcastle-upon-Tyne NE1 7RU
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LeicestershireLE17
Vo145
p1595
ICSCRM99)
0-7803-6404-X/00/
pj 69 diode
shottky barrier diode 100V 100A
diode pj
sic igbt 1000V 400 A
failure analysis IGBT
sic diode
diode schottky 600v
Cree SiC diode die
300C
600C
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Semiconductor Group igbt
Abstract: IGBT power loss static characteristics of igbt
Text: Connecting IGBTs in Parallel Fundamentals 1 Introduction Apart from looking for an IGBT which is designed for a particular power range there is also the possibility, particularly at high currents, of connecting two or more smaller IGBTs in parallel. Noteworthy advantages of this are a more flexible and individual organization of the layout,
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Untitled
Abstract: No abstract text available
Text: AND9100/D Paralleling of IGBTs Introduction http://onsemi.com High power systems require the paralleling of IGBTs to handle loads well into the 10’s and sometimes the 100’s of kilowatts. Paralleled devices can be discrete packaged devices, or bare die assembled within a module. This is done
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AND9100/D
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Abstract: No abstract text available
Text: JULY 1996 ITC14415006D PRELIMINARY DATA DS4393-2.6 ITC14415006D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 600V IC(CONT) 150A VCE(sat) 2.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.
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ITC14415006D
DS4393-2
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Untitled
Abstract: No abstract text available
Text: JULY 1996 ITC14407516D PRELIMINARY DATA DS4580-1.4 ITC14407516D POWERLINE N-CHANNEL IGBT CHIP FEATURES TYPICAL KEY PARAMETERS 25˚C VCES 1600V IC(CONT) 75A VCE(sat) 3.3V • n - Channel. ■ Enhancement Mode. ■ High Input Impedance. ■ High Switching Speed.
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ITC14407516D
DS4580-1
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IGBT THEORY AND APPLICATIONS 400V
Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page
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AN-1086
1628/D.
IGBT THEORY AND APPLICATIONS 400V
TEK 370A
tesec
IGBT THEORY AND APPLICATIONS
bj transistor igbt
high voltage pnp transistor 700v
jfet curve tracer
short circuit tracer schematic
bipolar transistor tester
AN10861
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APT0405
Abstract: TRANZORB IGBT parallel DRIVE OSCILLATION GE215 g3 diode "ADVANCED POWER TECHNOLOGY EUROPE" SP6 CASE TO SINK SP6 CASE TO SINK THERMAL RESISTANCE "SP6 CASE TO SINK" THERMAL RESISTANCE capacitor RG
Text: Application note APT0405 November 2004 Parallel Connection of IGBT and MOSFET Power Modules. Serge Bontemps Product Manager Advanced Power Technology Europe Chemin de Magret 33700 Merignac, France Introduction Several dice are usually connected in parallel within high current power modules.
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APT0405
APT0405
TRANZORB
IGBT parallel DRIVE OSCILLATION
GE215
g3 diode
"ADVANCED POWER TECHNOLOGY EUROPE"
SP6 CASE TO SINK
SP6 CASE TO SINK THERMAL RESISTANCE
"SP6 CASE TO SINK" THERMAL RESISTANCE
capacitor RG
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cm500ha-34a
Abstract: vmos CM100DY-34A CM400DY-34A series connection igbt cm200dy-34a IGBT cross CM100DU-34KA CM200DU-34KA CM300DY-34A
Text: NEW 1700V A-SERIES IGBT MODULES WITHS CSTBT AND IMPROVED FWDi By Nicholas Clark1, John Donlon1, Shinichi Iura2 1 Powerex Inc., Youngwood, PA, USA 2) Power Device Works, Mitsubishi Electric Corp., Fukuoka, Japan Abstract: This paper presents a new series of 1700V IGBT Insulated Gate Bipolar Transistor) modules using
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Abstract: No abstract text available
Text: AND9068/D Reading ON Semiconductor IGBT Datasheets http://onsemi.com APPLICATION NOTE Abstract The Insulated Gate Bipolar Transistor is a power switch well suited for high power applications such as motor control, UPS and solar inverters, and induction heating. If
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AND9068/D
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Untitled
Abstract: No abstract text available
Text: F206NIA200SA-M105F preliminary datasheet NPC Application flowNPC2 600V/200A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Figure 2.
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F206NIA200SA-M105F
00V/200A
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Abstract: No abstract text available
Text: F206NIA300SA-M106F preliminary datasheet NPC Application flowNPC2 600V/300A General conditions BUCK = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Vout= 230 VAC Figure 1. Buck IGBT BOOST = = = = VGEon VGEoff Rgon Rgoff 15 V -15 V 4Ω 4Ω Figure 2.
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F206NIA300SA-M106F
00V/300A
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Rogowski Coil design
Abstract: Rogowski Coil Measurement of stray inductance for IGBT IGBT Pspice IGBT 5kV pspice high frequency igbt pwm igbt rogowski coil measurement IGBT with V-I characteristics Rogowski
Text: Research of Current Distribution in IGBT Modules with Multiple Chips in Parallel M.Bäßler1, M.Münzer1, S.Burkert2 1 eupec GmbH, Max Planck Str.5, D-59581Warstein Germany, Tel: +49-2902-764-2290, Fax: +492902-764-1150, email: [email protected] 2) Otto-von-Guericke-Universität, Universitätsplatz2 Magdeburg Germany
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D-59581Warstein
2003-Toulouse
Rogowski Coil design
Rogowski Coil
Measurement of stray inductance for IGBT
IGBT Pspice
IGBT 5kV
pspice high frequency igbt
pwm igbt
rogowski coil measurement
IGBT with V-I characteristics
Rogowski
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POWER BJTs
Abstract: AN1540 IXYS SCR Gate Drive vertical pnp bjt failure analysis IGBT Drive Base BJT Nippon capacitors IGBT tail time
Text: MOTOROLA Order this document by AN1540/D SEMICONDUCTOR APPLICATION NOTE AN1540 Application Considerations Using Insulated Gate Bipolar Transistors IGBTs Prepared by: C.S. Mitter Motorola Inc. DEVICE CHARACTERISTICS The recently introduced Insulated Gate Bipolar Transistor
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AN1540/D
AN1540
AN1540/D*
POWER BJTs
AN1540
IXYS SCR Gate Drive
vertical pnp bjt
failure analysis IGBT
Drive Base BJT
Nippon capacitors
IGBT tail time
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Untitled
Abstract: No abstract text available
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
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STGW30NC120HD
Abstract: GW30NC120HD JESD97
Text: STGW30NC120HD N-channel 1200V - 30A - TO-247 very fast PowerMESH IGBT Features VCES VCE sat @25°C IC @100°C STGW30NC120HD 1200V < 2.75V 30A Type • Low on-losses ■ Low on-voltage drop (Vcesat) ■ High current capability ■ High input impedance (voltage driven)
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STGW30NC120HD
O-247
STGW30NC120HD
GW30NC120HD
JESD97
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gb10nb
Abstract: GB10NB60S GB10NB60 STGB10NB60S gp10nb60s
Text: STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features • Low on-voltage drop VCE(sat ■ High current capability TAB TAB Applications ■ Light dimmer ■ Static relays ■ Motor drive 3 3 1 TO-220 1 2 D2PAK Description This IGBT utilizes the advanced PowerMESH
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STGB10NB60S
STGP10NB60S
O-220
GB10NB60S
GP10NB60S
O-220
STGB10NB60ST4
STGB10NB60S,
gb10nb
GB10NB60
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Untitled
Abstract: No abstract text available
Text: STGB10NB60S STGP10NB60S 16 A, 600 V, low drop IGBT Features • Low on-voltage drop VCE(sat ■ High current capability TAB TAB Applications ■ Light dimmer ■ Static relays ■ Motor drive 3 3 1 TO-220 1 2 D2PAK Description This IGBT utilizes the advanced PowerMESH
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STGB10NB60S
STGP10NB60S
O-220
STGB10NB60ST4
GB10NB60S
GP10NB60S
STGB10NB60S
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