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    STATIC-RAM 8K-X-8 150NS Search Results

    STATIC-RAM 8K-X-8 150NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    STATIC-RAM 8K-X-8 150NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STATIC-RAM 8K-X-8 150ns

    Abstract: 29205BXA 80C86 80C88 HM1-65642-9 HM-65642
    Text: HM-65642 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which


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    PDF HM-65642 HM-65642 80C86 80C88 STATIC-RAM 8K-X-8 150ns 29205BXA HM1-65642-9

    HM1-65642

    Abstract: 29205BXA 80C86 80C88 HM1-65642-9 HM-65642
    Text: HM-65642 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which


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    PDF HM-65642 HM-65642 80C86 80C88 HM1-65642 29205BXA HM1-65642-9

    HM1-65642/883

    Abstract: HM4-65642/883 80C86 80C88
    Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


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    PDF HM-65642/883 MIL-STD883 150ns HM1-65642/883 HM4-65642/883 80C86 80C88

    HM1-65642/883

    Abstract: HM4-65642/883 80C86 80C88 HM65642C intersil eprom
    Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell


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    PDF HM-65642/883 MIL-STD883 150ns HM1-65642/883 HM4-65642/883 80C86 80C88 HM65642C intersil eprom

    Untitled

    Abstract: No abstract text available
    Text: DS1553 64kB, Nonvolatile, Year-2000-Compliant Timekeeping RAM www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS1553 is a full-function, year-2000compliant Y2KC real-time clock/calendar (RTC) with an RTC alarm, watchdog timer, power-on reset, battery monitor, and 8k x 8 nonvolatile static


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    PDF DS1553 Year-2000-Compliant DS1553 year-2000compliant 24-hour

    EEPROM 2864 CMOS

    Abstract: No abstract text available
    Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM


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    PDF DS1225AB/AD 28-pin DS1225AD) DS1225AB) 150ns 200ns EEPROM 2864 CMOS

    Untitled

    Abstract: No abstract text available
    Text: S-28 Series PARALLEL E2PROM FEATURES The S-2812A and the S-2817A are 2K x 8-bit, and the S2860B and the S-2864B are 8K x 8-bit parallel E 2PROMs that feature low current consumption. The S-2812A and the S2860B operate within a wide voltage range and can operate


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    PDF S-2812A S-2817A S2860B S-2864B 32-byte 150ns

    M48T18

    Abstract: crystal 24 MH DS1643 M48T08 SOH28 M4T18-BR12SH1 M4T18-BR12SH1TR
    Text: M48T08 M48T18 64Kb 8K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS TYPICAL CLOCK ACCURACY of ± 1 MINUTE


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    PDF M48T08 M48T18 M48T08: M48T18: 28-LEAD AI01021B 150ns PCDIP28 SOH28 M48T18 crystal 24 MH DS1643 M48T08 SOH28 M4T18-BR12SH1 M4T18-BR12SH1TR

    SOP 8 200MIL

    Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
    Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with


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    PDF D-85622 REJ01C0001-0100Z SOP 8 200MIL serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash

    TRANSISTOR 8808 W

    Abstract: HM5-8808A-8 8808 FTD01 HM-8808A HM5-8808B-8
    Text: i l l H a r r is o u HM-8808 HM-8808A .,co .u c,o - 8K x 8 Asynchronous CMOS Static RAM Module January 1992 Features Description • Full CMOS Design The HM-8808 and HM-8808A are 8K x 8 Asynchronous CMOS Static RAM Modules, based on multi-layered, co-fired, dual-in-line


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    PDF HM-8808 HM-8808A HM-8808A HM-6S162 HM-65162 HM8808) HM-8808A) TRANSISTOR 8808 W HM5-8808A-8 8808 FTD01 HM5-8808B-8

    Untitled

    Abstract: No abstract text available
    Text: t> rij 005403 D p m DPS8808, DPS8808A 8K 8 Dense-Pac Microsystems, Inc. CM OS SRAM X DESCRIPTION: The DPS8808 A>85, -120, -150, -200 is an 8K by 8 bit high speed static RAM constructed on a ceramic substrate using 4 DP6116 (2,048 x 8 static RAMs in leadless chip carriers Functional


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    PDF DPS8808, DPS8808A DPS8808 DP6116 DPS8808A

    TRANSISTOR 8808 W

    Abstract: HM5-8808B-8
    Text: i l l h a r f r is O U HM-8808 HMS808A S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM Module January 1992 Features Description • Full CMOS Design The HM-8808 and HM-8808A are 8K x 8 Asynchronous CMOS Static RAM Modules, based on multi-layered, co-fired, dual-in-line


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    PDF HM-8808 HMS808A HM-8808A HM-65162 HM8808) HM-8808A) TRANSISTOR 8808 W HM5-8808B-8

    Untitled

    Abstract: No abstract text available
    Text: HM-65642/883 S 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random


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    PDF HM-65642/883 MIL-STD883 HM-65642/883 80C86 80C88 100kHz

    Untitled

    Abstract: No abstract text available
    Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM


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    PDF GR881 28-pin GR881 GR881.

    xxxxw

    Abstract: No abstract text available
    Text: £D HARRIS H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM June 1989 Features D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. The H M -6 564 2/88 3 is a CMOS 8192 x 8 -b it Static


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    PDF 80C86 80C88 HM-65642 xxxxw

    6216 static ram

    Abstract: transistor A6p
    Text: HM-65642 HARRIS S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM M arch 1 9 9 7 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which


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    PDF HM-65642 HM-65642 80C86 80C88 6216 static ram transistor A6p

    Untitled

    Abstract: No abstract text available
    Text: HM-8808-8 HM-8808A-8 HARRIS 8K x 8 Asynchronous CMOS Static RAM Module June 1989 P in o u ts Features • • • • • • • • • • • • • • TOP VIEW Full CMOS Design 6 Transistor Memory Cell Low Standby Current. 250/900 jA


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    PDF HM-8808-8 HM-8808A-8 100/120/150ns HM-8808A) HM-8808 HM-8808A

    Untitled

    Abstract: No abstract text available
    Text: DS1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SR A M PIN ASSIGNMENT • Data retention in the absence of V c c • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC I 1 2* 1


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    PDF DS1225AB/AD 150ns, 170ns, 200ns 28-pin DS1225AB/AD 28-PIN

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM


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    PDF DS1225Y 150ns, 170ns, 200ns 28-pin 0S1225Y DS1225Y 28-PIN

    transistor smd hq

    Abstract: No abstract text available
    Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which


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    PDF HM-65642 HM-65642 80C86 80C88 transistor smd hq

    ram 2064

    Abstract: t2064 2064 ram Static RAM 2064 ram 2064 150ns
    Text: jy u s HM 2064 U M K i /1/IATRA- HARRIS SEMICONDUCTOR 8K X 8 CMOS STATIC RAM < = y \fc y \ D E C E M B E R 1985 Features • ASYNCHRONOUS • OPERATING SUPPLY CURRENT : 60 mA max • ACCESS TIM E : 120 ns max • DATA RETENTION MODE : 2V, 50 ¡¡.A max • STAND BY CURRENT : 100 ;iA max


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    PDF 150ns 3-2064U T-2064U ram 2064 t2064 2064 ram Static RAM 2064 ram 2064 150ns

    Untitled

    Abstract: No abstract text available
    Text: h HM-65642 a rm s 8K x 8 Asynchronous CMOS Static RAM Features Pinouts • Full C M O S Design TOP VIEW • Six Transistor M em o ry Cell DQO c c c c c c c c c c c 11 16 3 DQ6 DQ1 c 12 17 DQ5 DO2 c c 13 16 3 3 14 15 3 DQ3 NC • Low Standby Supply C u rre n t. 100,uA


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    PDF HM-65642 150ns

    LM33256

    Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
    Text: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns


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    PDF 0QD75b3 150ns, versionofLC3518B ofLC3518B ofLC3518BL 120ns, LM33256 LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram

    DS1225Y

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC I NC * 25 1 AS 24 1 A9 • Over 10 years of data retention • Standard 28-pin JEDEC pinout • Available in 150ns, 170ns, or 200ns read access


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    PDF 28-pin 150ns, 170ns, 200ns DS1225Y DS1225Y