STATIC-RAM 8K-X-8 150ns
Abstract: 29205BXA 80C86 80C88 HM1-65642-9 HM-65642
Text: HM-65642 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which
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HM-65642
HM-65642
80C86
80C88
STATIC-RAM 8K-X-8 150ns
29205BXA
HM1-65642-9
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HM1-65642
Abstract: 29205BXA 80C86 80C88 HM1-65642-9 HM-65642
Text: HM-65642 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which
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HM-65642
HM-65642
80C86
80C88
HM1-65642
29205BXA
HM1-65642-9
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HM1-65642/883
Abstract: HM4-65642/883 80C86 80C88
Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell
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HM-65642/883
MIL-STD883
150ns
HM1-65642/883
HM4-65642/883
80C86
80C88
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HM1-65642/883
Abstract: HM4-65642/883 80C86 80C88 HM65642C intersil eprom
Text: HM-65642/883 8K x 8 Asynchronous CMOS Static RAM May 2002 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Full CMOS Design • Six Transistor Memory Cell
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HM-65642/883
MIL-STD883
150ns
HM1-65642/883
HM4-65642/883
80C86
80C88
HM65642C
intersil eprom
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Untitled
Abstract: No abstract text available
Text: DS1553 64kB, Nonvolatile, Year-2000-Compliant Timekeeping RAM www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS1553 is a full-function, year-2000compliant Y2KC real-time clock/calendar (RTC) with an RTC alarm, watchdog timer, power-on reset, battery monitor, and 8k x 8 nonvolatile static
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DS1553
Year-2000-Compliant
DS1553
year-2000compliant
24-hour
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EEPROM 2864 CMOS
Abstract: No abstract text available
Text: DS1225AB/AD 64k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Directly replaces 8k x 8 volatile static RAM
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DS1225AB/AD
28-pin
DS1225AD)
DS1225AB)
150ns
200ns
EEPROM 2864 CMOS
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Untitled
Abstract: No abstract text available
Text: S-28 Series PARALLEL E2PROM FEATURES The S-2812A and the S-2817A are 2K x 8-bit, and the S2860B and the S-2864B are 8K x 8-bit parallel E 2PROMs that feature low current consumption. The S-2812A and the S2860B operate within a wide voltage range and can operate
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S-2812A
S-2817A
S2860B
S-2864B
32-byte
150ns
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M48T18
Abstract: crystal 24 MH DS1643 M48T08 SOH28 M4T18-BR12SH1 M4T18-BR12SH1TR
Text: M48T08 M48T18 64Kb 8K x 8 TIMEKEEPER SRAM DATA BRIEFING INTEGRATED ULTRA LOW POWER SRAM, REAL TIME CLOCK, POWER-FAIL CONTROL CIRCUIT and BATTERY BYTEWIDE RAM-LIKE CLOCK ACCESS BCD CODED YEAR, MONTH, DAY, DATE, HOURS, MINUTES and SECONDS TYPICAL CLOCK ACCURACY of ± 1 MINUTE
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M48T08
M48T18
M48T08:
M48T18:
28-LEAD
AI01021B
150ns
PCDIP28
SOH28
M48T18
crystal 24 MH
DS1643
M48T08
SOH28
M4T18-BR12SH1
M4T18-BR12SH1TR
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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TRANSISTOR 8808 W
Abstract: HM5-8808A-8 8808 FTD01 HM-8808A HM5-8808B-8
Text: i l l H a r r is o u HM-8808 HM-8808A .,co .u c,o - 8K x 8 Asynchronous CMOS Static RAM Module January 1992 Features Description • Full CMOS Design The HM-8808 and HM-8808A are 8K x 8 Asynchronous CMOS Static RAM Modules, based on multi-layered, co-fired, dual-in-line
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HM-8808
HM-8808A
HM-8808A
HM-6S162
HM-65162
HM8808)
HM-8808A)
TRANSISTOR 8808 W
HM5-8808A-8
8808
FTD01
HM5-8808B-8
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Untitled
Abstract: No abstract text available
Text: t> rij 005403 D p m DPS8808, DPS8808A 8K 8 Dense-Pac Microsystems, Inc. CM OS SRAM X DESCRIPTION: The DPS8808 A>85, -120, -150, -200 is an 8K by 8 bit high speed static RAM constructed on a ceramic substrate using 4 DP6116 (2,048 x 8 static RAMs in leadless chip carriers Functional
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DPS8808,
DPS8808A
DPS8808
DP6116
DPS8808A
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TRANSISTOR 8808 W
Abstract: HM5-8808B-8
Text: i l l h a r f r is O U HM-8808 HMS808A S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM Module January 1992 Features Description • Full CMOS Design The HM-8808 and HM-8808A are 8K x 8 Asynchronous CMOS Static RAM Modules, based on multi-layered, co-fired, dual-in-line
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HM-8808
HMS808A
HM-8808A
HM-65162
HM8808)
HM-8808A)
TRANSISTOR 8808 W
HM5-8808B-8
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Untitled
Abstract: No abstract text available
Text: HM-65642/883 S 8K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65642/883 is a CMOS 8192 x 8-bit Static Random
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HM-65642/883
MIL-STD883
HM-65642/883
80C86
80C88
100kHz
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Untitled
Abstract: No abstract text available
Text: GREENWICH 8K x 8 NON-VOLATILE RAM INSTRUMENTS LTD • • • • • • • • • GR881 Has instant power circuit, does not require voltage slew Plug-in replacement for Static RAM chips Retains data for up to 10 years No erasure required Functions as Data or Proram RAM
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GR881
28-pin
GR881
GR881.
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xxxxw
Abstract: No abstract text available
Text: £D HARRIS H M - 6 5 6 4 2 /8 8 3 8K x 8 Asynchronous CMOS Static RAM June 1989 Features D escrip tio n • This Circuit is Processed in Accordance to M il-S td 88 3 and is Fully Conform ant Under th e Provisions of Paragraph 1.2.1. The H M -6 564 2/88 3 is a CMOS 8192 x 8 -b it Static
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80C86
80C88
HM-65642
xxxxw
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6216 static ram
Abstract: transistor A6p
Text: HM-65642 HARRIS S E M I C O N D U C T O R 8K x 8 Asynchronous CMOS Static RAM M arch 1 9 9 7 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which allows easy memory board layouts which
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HM-65642
HM-65642
80C86
80C88
6216 static ram
transistor A6p
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Untitled
Abstract: No abstract text available
Text: HM-8808-8 HM-8808A-8 HARRIS 8K x 8 Asynchronous CMOS Static RAM Module June 1989 P in o u ts Features • • • • • • • • • • • • • • TOP VIEW Full CMOS Design 6 Transistor Memory Cell Low Standby Current. 250/900 jA
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HM-8808-8
HM-8808A-8
100/120/150ns
HM-8808A)
HM-8808
HM-8808A
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Untitled
Abstract: No abstract text available
Text: DS1225AB/AD DALLAS SEMICONDUCTOR FEATURES DS1225AB/AD 64K Nonvolatile SR A M PIN ASSIGNMENT • Data retention in the absence of V c c • Data is automatically protected during power loss • Directly replaces 8K x 8 volatile static RAM or EEPROM NC I 1 2* 1
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DS1225AB/AD
150ns,
170ns,
200ns
28-pin
DS1225AB/AD
28-PIN
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DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC 1 1 • Data is automatically protected during power loss 28 g VCC A12 I 2 27 § WE • Directly replaces 8K x 8 volatile static RAM or EEPROM
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DS1225Y
150ns,
170ns,
200ns
28-pin
0S1225Y
DS1225Y
28-PIN
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transistor smd hq
Abstract: No abstract text available
Text: f u H v i u S E M I C O N D U C T O R A R R HM-65642 IS 8K X 8 Asynchronous CMOS StStiC RAM January 1992 Features Description • Full CMOS Design The HM-65642 is a CMOS 8192 x 8-bit Static Random Access Memory. The pinout is the JEDEC 28 pin, 8-bit wide standard, which
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HM-65642
HM-65642
80C86
80C88
transistor smd hq
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ram 2064
Abstract: t2064 2064 ram Static RAM 2064 ram 2064 150ns
Text: jy u s HM 2064 U M K i /1/IATRA- HARRIS SEMICONDUCTOR 8K X 8 CMOS STATIC RAM < = y \fc y \ D E C E M B E R 1985 Features • ASYNCHRONOUS • OPERATING SUPPLY CURRENT : 60 mA max • ACCESS TIM E : 120 ns max • DATA RETENTION MODE : 2V, 50 ¡¡.A max • STAND BY CURRENT : 100 ;iA max
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150ns
3-2064U
T-2064U
ram 2064
t2064
2064 ram
Static RAM 2064
ram 2064 150ns
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Untitled
Abstract: No abstract text available
Text: h HM-65642 a rm s 8K x 8 Asynchronous CMOS Static RAM Features Pinouts • Full C M O S Design TOP VIEW • Six Transistor M em o ry Cell DQO c c c c c c c c c c c 11 16 3 DQ6 DQ1 c 12 17 DQ5 DO2 c c 13 16 3 3 14 15 3 DQ3 NC • Low Standby Supply C u rre n t. 100,uA
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HM-65642
150ns
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LM33256
Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Text: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns
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0QD75b3
150ns,
versionofLC3518B
ofLC3518B
ofLC3518BL
120ns,
LM33256
LM33256N
64K x 8 BIT DYNAMIC RAM
LM33256K
sanyo LC3564PL
lc3664* sanyo
LC324256 4m
static ram 8K
Static RAM
16k nmos dynamic ram
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DS1225Y
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS1225Y 64K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc NC I NC * 25 1 AS 24 1 A9 • Over 10 years of data retention • Standard 28-pin JEDEC pinout • Available in 150ns, 170ns, or 200ns read access
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28-pin
150ns,
170ns,
200ns
DS1225Y
DS1225Y
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