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    STMicroelectronics STGWT40H65FB

    IGBT 650V 80A 283W TO3P-3L
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    Verical STGWT40H65FB 465 5
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    Future Electronics STGWT40H65FB Tube 600 1
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    STGWT40H65FB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGWT40H65FB STMicroelectronics IGBTs - Single, Discrete Semiconductor Products, IGBT 650V 80A 283W TO3P-3L Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB STGWT40H65FB 650 V, 40 A high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW40H65FB STGWT40H65FB O-247 DocID025171

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • High speed switching series • Minimized tail current 3 2 1 TO-3PF


    Original
    PDF STGW40H65FB, STGFW40H65FB, STGWT40H65FB O-247 DocID025171

    Untitled

    Abstract: No abstract text available
    Text: STGW40H65FB STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW40H65FB STGWT40H65FB O-247 DocID025171

    GW40H65FB

    Abstract: GWT40H65FB
    Text: STGW40H65FB STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • High speed switching series • Minimized tail current 2 3 3 2 1 1 TO-247 • Very low saturation voltage: VCE sat = 1.6 V


    Original
    PDF STGW40H65FB STGWT40H65FB O-247 DocID025171 GW40H65FB GWT40H65FB