STL12IE90 Search Results

STL12IE90 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STL12IE90		STMicroelectronics	900V 12A 90 Mohm Power Cascode Monolithic Configuration		Original	PDF

STL12IE90 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STL12IE90 Abstract: P025M sot935 gs 2030 1226 BM Text: STL12IE90 900 V - 12 A - 90 mΩ POWER CASCODE MONOLITHIC CONFIGURATION ADVANCE DATA • ■ ■ ■ ■ ■ HIGH VOLTAGE / HIGH CURRENT CASCODE CONFIGURATION LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH UP TO 150 KHz SQUARED RBSOA UP TO 900 V VERY LOW CISS DRIVEN BY RG = 56 Ω	Original	PDF	STL12IE90 OT-93 STL12IE90 P025M sot935 gs 2030 1226 BM
ESBT Abstract: an1699 STL12IE90 AN-1699 Text: AN1699 APPLICATION NOTE Efficient driving network for ESBT to reduce the dynamic V CESAT and enhance the switching performances Introduction This document deals with the ESBT driving requirements emitter switched bipolar transistor . First of all the classic driving network proposed in the literature has been analyzed to highlight	Original	PDF	AN1699 ESBT an1699 STL12IE90 AN-1699
ESBT Abstract: AN1699 STL12IE90 AN-1699 Text: AN1699 APPLICATION NOTE EFFICIENT DRIVING NETWORK FOR ESBT IN FORWARD TOPOLOGY SMPS S.Buonomo, L.Difalco & R.Scollo 1. THE CLASSICAL DRIVING CIRCUIT The ESBT Emitter Switching Bipolar Transistor configuration consists of a High Voltage Bipolar Transistor and a Low Voltage Power Mosfet in Cascode topology, as shown in figure 1.	Original	PDF	AN1699 ESBT AN1699 STL12IE90 AN-1699
ESBT Abstract: AN1699 AN-1699 STL12IE90 emitter switched bipolar transistor Text: AN1699 Application note Efficient driving network for ESBT to reduce the dynamic VCESAT and enhance the switching performances Introduction This document deals with the ESBT driving requirements emitter switched bipolar transistor . First of all the classic driving network proposed in the literature has been analyzed to	Original	PDF	AN1699 ESBT AN1699 AN-1699 STL12IE90 emitter switched bipolar transistor