STP19N06FI Search Results

STP19N06FI Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STP19N06FI		STMicroelectronics	N-Channel Enhancement Mode Power MOS Transistor		Original	PDF
STP19N06FI		STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN		Original	PDF

STP19N06FI Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
c1913 Abstract: STP19N06 STP19N06FI 0119a Text: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP19N06 STP19N06FI 100oC 175oC O-220 ISOWATT220 c1913 STP19N06 STP19N06FI 0119a	PDF
STP19N06 Abstract: STP19N06FI Text: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	STP19N06 STP19N06FI 100oC 175oC O-220 ISOWATT220 STP19N06 STP19N06FI	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

c1913

Abstract: STP19N06 STP19N06FI 0119a
Text: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Original

STP19N06 STP19N06FI 100oC 175oC O-220 ISOWATT220 c1913 STP19N06 STP19N06FI 0119a

PDF

STP19N06

Abstract: STP19N06FI
Text: STP19N06 STP19N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP19N06 STP19N06FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.1 Ω < 0.1 Ω 19 A 13 A TYPICAL RDS(on) = 0.085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED