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    JESD97

    Abstract: STRH12P10ESY1 STRH12P10ESY3 MG 5248
    Text: STRH12P10ESY1 STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH12P10ESY1 100 V STRH12P10ESY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH12P10ESY1 STRH12P10ESY3 O-257AA 34Mev/cm JESD97 STRH12P10ESY1 STRH12P10ESY3 MG 5248

    Untitled

    Abstract: No abstract text available
    Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge


    Original     		PDF STRH12P10ESY3 O-257AA 100kRad 34Mev/cm O-257AA

    STRH12P10ESY1

    Abstract: STRH12P10ESY3
    Text: STRH12P10ESY3 P-channel 100V - 0.265Ω - TO-257AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH12P10ESY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge ■ Light weight


    Original     		PDF STRH12P10ESY3 O-257AA 100kRad 34Mev/cm STRH12P10ESY1 STRH12P10ESY3