Untitled
Abstract: No abstract text available
Text: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA
|
Original
|
STRH40P10FSY1
STRH40P10FSY3
O-254AA
34Mev/cm
O-254AA
|
PDF
|
STRH40P10FSY3
Abstract: JESD97 STRH40P10FSY1
Text: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA
|
Original
|
STRH40P10FSY1
STRH40P10FSY3
O-254AA
34Mev/cm
STRH40P10FSY3
JESD97
STRH40P10FSY1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
|
Original
|
STRH40P10
O-254AA
SC06140p
|
PDF
|
to-254aa
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
|
Original
|
STRH40P10
O-254AA
STRH40P10FSY1
STRH40P10FSY01
to-254aa
|
PDF
|
RH40P
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization
|
Original
|
STRH40P10FSY3
O-254AA
O-254AA
STRH40P10
RH40P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■
|
Original
|
STRH40P10FSY3
O-254AA
100kRad
34Mev/cm
O-254AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge
|
Original
|
STRH40P10FSY3
O-254AA
100kRad
34Mev/cm
O-254AA
|
PDF
|
STRH40P10FSY3
Abstract: No abstract text available
Text: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA
|
Original
|
STRH40P10FSY3
O-254AA
100kRad
34Mev/cm
STRH40P10FSY3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened
|
Original
|
STRH40P10
O-254AA
O-254AA
SC06140p
|
PDF
|