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    STROBE FLASHER USE IGBT Search Results

    STROBE FLASHER USE IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    STROBE FLASHER USE IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CT20TM-8

    Abstract: STROBE FLASHER USE IGBT
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE CT20TM-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 17 8.5 5.0 1.2 5.2 1.3MAX. 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.7MAX. 13.5MIN. φ 3.2 q w e w q GATE w COLLECTOR e EMITTER q ¡VCES . 400V


    Original     		PDF CT20TM-8 O-220F CT20TM-8 STROBE FLASHER USE IGBT

    STROBE FLASHER USE IGBT

    Abstract: strobe trigger CT40TMH-8
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 17 8.5 5.0 1.2 5.2 1.3MAX. 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.7MAX. 13.5MIN. φ 3.2 q w e w q GATE w COLLECTOR e EMITTER q ¡VCES . 400V


    Original     		PDF CT40TMH-8 O-220F STROBE FLASHER USE IGBT strobe trigger CT40TMH-8

    CT20VML-8

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML-8 OUTLINE DRAWING Dimensions in mm 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 r 1.5MAX. 10.5MAX. 13.2 ± 0.5 1 0.5 0.5 w e wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES . 400V


    Original     		PDF CT20VML-8 O-220C Pulsed20A CT20VML-8

    700uF

    Abstract: capacitor 800 uf voltage rating 330v CT20VM-8 2.6 uf 400v maximum ic IGBT
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VM-8 STROBE FLASHER USE CT20VM-8 OUTLINE DRAWING Dimensions in mm 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 r 1.5MAX. 10.5MAX. 13.2 ± 0.5 1 0.5 0.5 w e wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES . 400V


    Original     		PDF CT20VM-8 O-220C 700uF capacitor 800 uf voltage rating 330v CT20VM-8 2.6 uf 400v maximum ic IGBT

    STROBE FLASHER USE IGBT

    Abstract: CT30TM-8
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE CT30TM-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 17 8.5 5.0 1.2 5.2 1.3MAX. 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.7MAX. 13.5MIN. φ 3.2 q w e w q GATE w COLLECTOR e EMITTER q ¡VCES . 400V


    Original     		PDF CT30TM-8 O-220F temperat60A STROBE FLASHER USE IGBT CT30TM-8

    symbol of capacitor 1000uf

    Abstract: CT30VM-8 STROBE FLASHER USE IGBT capacitor 800 uf voltage rating 330v 30 v 1000uF capacitor 25 v 1000uF capacitor 50 v 1000uF capacitor
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 OUTLINE DRAWING Dimensions in mm 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 r 1.5MAX. 10.5MAX. 13.2 ± 0.5 1 0.5 0.5 w e wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES . 400V


    Original     		PDF CT30VM-8 O-220C symbol of capacitor 1000uf CT30VM-8 STROBE FLASHER USE IGBT capacitor 800 uf voltage rating 330v 30 v 1000uF capacitor 25 v 1000uF capacitor 50 v 1000uF capacitor

    STROBE FLASHER USE IGBT

    Abstract: 130A CT20VS-8
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w COLLECTOR e EMITTER r COLLECTOR


    Original     		PDF CT20VS-8 O-220S STROBE FLASHER USE IGBT 130A CT20VS-8

    STROBE FLASHER USE IGBT

    Abstract: 400UF CT20ASJ-8
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 1.0 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 0.5 ± 0.2 2.3 0.8 1 2 3 wr q GATE w COLLECTOR


    Original     		PDF CT20ASJ-8 10MAX. Collector-120A STROBE FLASHER USE IGBT 400UF CT20ASJ-8

    STROBE FLASHER USE IGBT

    Abstract: CT35SM-8
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w e 5.45 5.45 0.6 2.8 4 wr q GATE w COLLECTOR e EMITTER r COLLECTOR q ¡VCES . 400V


    Original     		PDF CT35SM-8 tempe80A STROBE FLASHER USE IGBT CT35SM-8

    CT25ASJ-8

    Abstract: cm400uf
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE CT25ASJ-8 OUTLINE DRAWING Dimensions in mm 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 1.0 2.3 2.3 10MAX. 2.3MIN. 0.9MAX. 1.0MAX. 5.5 ± 0.2 4 0.5 ± 0.2 2.3 0.8 1 2 3 wr q GATE w COLLECTOR


    Original     		PDF CT25ASJ-8 10MAX. Collector130A CT25ASJ-8 cm400uf

    CT35SM-8

    Abstract: CT35SM8
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT35SM-8 STROBE FLASHER USE CT35SM-8 •400V • 200A ' VCES >ICM APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol VCES Vges Vgem Icm Tj Tstg Tc = 25 0 Parameter Collector-emitter voltage Gate-emitter voltage


    OCR Scan     		PDF CT35SM-8 RGS30il) UeS200A CT35SM-8 CT35SM8

    MITSUBISHI CM400

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VSL-8 STROBE FLASHER USE CT20VSL-8 • VCES •400V • ICM • 130A APPLICATION Strobe Flasher. MAXIMUM RATINGS Sym bol ïc = 25 C Param eter Conditions R atings Unit 400 V VCES C ollector-em itter voltage


    OCR Scan     		PDF CT20VSL-8 400uF MITSUBISHI CM400

    800NF

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30VS-8 STROBE FLASHER USE APPLICATION Strobe Flasher. MAXIMUM RATINGS Symbol T.: = 25°C Parameter Conditions Ratings Unit 400 V VCES Collector-emitter voltage V ge = OV VGES Gate-emitter voltage V ce = OV, See notice 4


    OCR Scan     		PDF CT30VS-8 800nF 1000jiF)

    IG8T

    Abstract: LXES1
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20TM-8 STROBE FLASHER USE CT20TM-8 • VCES •400V • ICM ■ 1 3 0 A APPLICATION Strobe Flasher. MAXIMUM RATINGS To = 25-C Parameter Conditions Ratings Unit VCES Collector-emitter voltage V ge = OV 400 V


    OCR Scan     		PDF CT20TM-8 lxeS130A IG8T LXES1

    STROBE FLASHER USE IGBT

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20AS-8 STROBE FLASHER USE CT20AS-8 %% • VCES . 400V • ICM .- •130A


    OCR Scan     		PDF CT20AS-8 400fiF lxeSi130A STROBE FLASHER USE IGBT

    STROBE FLASHER USE IGBT

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25ASJ-8 STROBE FLASHER USE !i CT25ASJ-8 * % • VCES . 400V • ICM . 150A


    OCR Scan     		PDF CT25ASJ-8 CT25ASJ-8 RGS30Q) lxeS5150A STROBE FLASHER USE IGBT

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30VM-8 STROBE FLASHER USE CT30VM-8 V c e s . 400V Ic m . 180A


    OCR Scan     		PDF CT30VM-8 temperature1000

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT30TM-8 STROBE FLASHER USE CT30TM-8 • VCES .400V • ICM .1 8 0 A


    OCR Scan     		PDF CT30TM-8 1000h

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT20VML-8 STROBE FLASHER USE APPLICATION Strobe Flasher. MAXIMUM RATINGS Sym bol To = 25°C Param eter C onditions Ratings Unit V c es C ollecto r-e m itte r voltage V g e = OV 400 V V g es G a te -e m ltte r voltage


    OCR Scan     		PDF CT20VML-8

    IGBT G

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VM-8 STROBE FLASHER USE CT20VM-8 OUTLINE DRAWING • VCES •400V S • ICM • • • 1 3 0 A D im e n sio n s in mm TO-220C APPLICATION Strobe Flasher. MAXIMUM RATINGS To = 25 C Ratings Unit VCES Collector-emitter voltage


    OCR Scan     		PDF CT20VM-8 O-220C IGBT G

    MITSUBISHI CM400

    Abstract: STROBE FLASHER USE IGBT CM400
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VML-8 STROBE FLASHER USE CT20VML-8 OUTLINE DRAWING Dimensions in mm • VCES . 400V • ICM .130A


    OCR Scan     		PDF CT20VML-8 O-220C 400jiF MITSUBISHI CM400 STROBE FLASHER USE IGBT CM400

    CT30TM-8

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT30TM-8 STROBE FLASHER USE OUTLINE DRAWING Dimensions in mm 10.5MAX. H O' q GATE w COLLECTOR e EMITTER V c e s . 400V Ic m . 180A


    OCR Scan     		PDF CT30TM-8 O-22QF 800jiF 10OOjiF CT30TM-8

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT20VSL-8 STROBE FLASHER USE OUTLINE DRAWING q w Dimensions in mm •V 6 +i e CO Q w r oi q w e r V c e s . 400V Ic m . 130A


    OCR Scan     		PDF CT20VSL-8 O-220S

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20ASJ-8 STROBE FLASHER USE CT20ASJ-8 OUTLINE DRAWING Dimensions in mm 6.5 0.5±0.1 5.0 ±0 .2 — — H -H - 1 h i X < Í! 2 <* : Ii ET [ 1.0 0.9MAX. Jl 0.5 ± 0 .2 2,3 2.3 Ü öljQ • VCES .


    OCR Scan     		PDF CT20ASJ-8 RG2S30Q)