FMMT620
Abstract: 450-170 FMMT620TA FMMT620TC PD6255 DSA003701
Text: FMMT620 SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure combined with advanced assembly techniques. Users
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FMMT620
INFOR43-7100
FMMT620
450-170
FMMT620TA
FMMT620TC
PD6255
DSA003701
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Supersot6
Abstract: Supersot 6 NDC7002N FDC6303N complementary FDC655AN fdc640p FDC6301N FDC6305N FDC637AN
Text: Discrete MOSFET SuperSOT-6 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SuperSOT-6 N-Channel FDC6401N 20 Dual - 0.07 0.095 - 3.3 3 0.96 FDC6305N 20 Dual - 0.08 0.12 - 3.5
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FDC6401N
FDC6305N
FDC637AN
FDC6303N
FDC6301N
FDC6561AN
FDC645N
FDC638P
FDC640P
FDC642P
Supersot6
Supersot 6
NDC7002N
FDC6303N
complementary
FDC655AN
fdc640p
FDC6301N
FDC6305N
FDC637AN
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marking Y1 transistor
Abstract: transistor marking y1 y1 transistor Supersot 6 transistor y1 Supersot6 PR63 y1 npn FMB2227A
Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring
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FMB2227A
300mA.
150mA,
300mA,
150mA
300mA
100kHz
100MHz
lwpPr19
marking Y1 transistor
transistor marking y1
y1 transistor
Supersot 6
transistor y1
Supersot6
PR63
y1 npn
FMB2227A
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marking Y1 transistor
Abstract: fairchild pin 1 marking
Text: FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 E1 C1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring
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FMB2227A
300mA.
marking Y1 transistor
fairchild pin 1 marking
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transistor Y2
Abstract: Y2 TRANSISTOR Supersot6 transistor marking y2 marking 002 complementary npn-pnp FMB3946 Supersot 6
Text: FMB3946 C2 E1 C1 Package: SuperSOT-6 Device Marking: .002 Note: The " . " dot signifies Pin 1 B2 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a general purpose amplifier and switch. The useful
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FMB3946
100mA
100MHz
100MHz
100uA,
fmb3946
lwpPr23
transistor Y2
Y2 TRANSISTOR
Supersot6
transistor marking y2
marking 002
complementary npn-pnp
Supersot 6
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NPN SOT23-6
Abstract: ZXT10N20DE6 ZXT10N20DE6TA ZXT10N20DE6TC DSA0037433
Text: ZXT10N20DE6 SuperSOT 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10N20DE6
OT23-6
OT23-6
NPN SOT23-6
ZXT10N20DE6
ZXT10N20DE6TA
ZXT10N20DE6TC
DSA0037433
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NPN SOT23-6
Abstract: ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC DSA0037435
Text: ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10N50DE6
OT23-6
OT23-6
NPN SOT23-6
ZXT10N50DE6
ZXT10N50DE6TA
ZXT10N50DE6TC
DSA0037435
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ZXT10P12DE6
Abstract: ZXT10P12DE6TA ZXT10P12DE6TC Marking 717 DSA0037437
Text: ZXT10P12DE6 SuperSOT 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=-12V; RSAT = 65m ; IC= -3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give
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ZXT10P12DE6
OT23-6
OT23-6
ZXT10P12DE6
ZXT10P12DE6TA
ZXT10P12DE6TC
Marking 717
DSA0037437
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FSB560
Abstract: FSB560A
Text: FSB560/FSB560A July 1998 FSB560 / FSB560A C E B TM SuperSOT -3 SOT-23 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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FSB560/FSB560A
FSB560
FSB560A
OT-23)
FSB560A
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FMMT723
Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
FMMT723
FMMT618
FMMT624
FMMT625
FMMT717
FMMT718
FMMT720
FMMT722
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FMMT617
Abstract: FMMT-617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 V12E
Text: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
vE130
100NLA
FMMT-617
FMMT618
FMMT624
FMMT625
FMMT717
V12E
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Untitled
Abstract: No abstract text available
Text: FSB660A PNP Low Saturation Transistor Description C These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. E B SuperSOT -3 SOT-23 Ordering Information Part Number Marking Package Packing Method
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FSB660A
OT-23)
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Untitled
Abstract: No abstract text available
Text: FSB660/FSB660A July 1998 FSB660 / FSB660A C E B TM SuperSOT -3 SOT-23 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol
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FSB660/FSB660A
FSB660
FSB660A
OT-23)
FSB660/FSB660A
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Untitled
Abstract: No abstract text available
Text: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDN338P
OT-23
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FDN337N
Abstract: SOIC-16
Text: March 1998 FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDN337N
OT-23
FDN337N
SOIC-16
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iss-400 diode
Abstract: FDN338P SOIC-16
Text: March 1998 FDN338P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
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FDN338P
FDN338P
iss-400 diode
SOIC-16
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FMMT619
Abstract: FMMT617 FMMT618 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722 FMMT723
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
FMMT618
FMMT624
FMMT625
FMMT717
FMMT718
FMMT720
FMMT722
FMMT723
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FMMT
Abstract: FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 FMMT717 FMMT718 FMMT720 FMMT722
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
FMMT
FMMT618
FMMT624
FMMT625
FMMT717
FMMT718
FMMT720
FMMT722
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NDS356AP
Abstract: No abstract text available
Text: September 1996 NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high
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NDS356AP
NDS356AP
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FT717
Abstract: fT723 FT619 BR-C ic108 FT624 FT625 FT618 I.C. 165
Text: 上海毅钧商贸有限公司 Http:www.ic108.com SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)
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ic108
625mW
FT617
FT717
FT618
FT718
FT619
FT720
FT624
FT723
FT717
fT723
FT619
BR-C
FT624
FT625
FT618
I.C. 165
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Untitled
Abstract: No abstract text available
Text: SuperSOTTM-8 Package Dimensions SuperSOT-8 FS PKG Code 34, 35 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0416 2000 Fairchild Semiconductor International September 1998, Rev. A
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supersot-3
Abstract: SuperSOTTM -3
Text: SuperSOTTM-3 Package Dimensions SuperSOT-3 FS PKG Code 32 1:1 Scale 1:1 on letter size paper Di mensions shown below are in: inches [mil limeters] Part Weight per unit (gram): 0.0097 2000 Fairchild Semiconductor International September 1998, Rev. A
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supersot 6 TE
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige
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FMBA0656
300mA.
supersot 6 TE
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D marking PNP
Abstract: MARKING IC RP 6 PR63
Text: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge
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FMB2227A
300mA.
150mA
150mA,
300mA,
100kHz
100MHz
D marking PNP
MARKING IC RP 6
PR63
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