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    SURFACE MOUNT TRANSISTOR A4 Search Results

    SURFACE MOUNT TRANSISTOR A4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    SURFACE MOUNT TRANSISTOR A4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		PDF KSH340 15ner

    Untitled

    Abstract: No abstract text available
    Text: KSH350 KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSH350

    KSH350

    Abstract: No abstract text available
    Text: KSH350 KSH350 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor


    Original     		PDF KSH350 KSH350

    KSH340

    Abstract: surface mount transistor A4
    Text: KSH340 KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I-PAK, “- I” Suffix) D-PAK 1 1.Base I-PAK 1 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor


    Original     		PDF KSH340 KSH340 surface mount transistor A4

    surface mount transistor A4

    Abstract: MARKING A4 transistor
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMA4PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-553 * High current gain.


    Original     		PDF OT-553) OT553 CHDTA114T tp300uS; 100MHz -40OC -100u -100m -500m surface mount transistor A4 MARKING A4 transistor

    ML2011

    Abstract: HSJ1636-011020 JACK3 2SC1815 pcb MOUNT JACK CONNECTOR headphone HSJ1636 2sc1815 transistor hrs connector 30 pin LM4922 QFN32
    Text: ML2011 reference board specification Revision A2 Date: 2006/06/19 ML2011 Reference board circuit diagram  Any surface mount transistor that can drive LED is OK.  Any surface mount LED is OK. DVDD Tr1 2SC1815 LED1 R4 10k ohm S1 DVDD ML2011 QFN32 5 TP1 connecter 50pins


    Original     		PDF ML2011 2SC1815 ML2011 QFN32) 50pins LM4922 10pins -10DA-2 HSJ1636-011020 JACK3 2SC1815 pcb MOUNT JACK CONNECTOR headphone HSJ1636 2sc1815 transistor hrs connector 30 pin LM4922 QFN32

    CHEMA4GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMA4GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-553 * High current gain.


    Original     		PDF OT-553) OT553 CHDTA114T 300uS; 100MHz -40OC -100u -100m -500m CHEMA4GP

    Untitled

    Abstract: No abstract text available
    Text: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C


    Original     		PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C

    Untitled

    Abstract: No abstract text available
    Text: MJD31/31C NPN Epitaxial Silicon Transistor Features • • • • • General Purpose Amplifier Low Speed Switching Applications Load Formed for Surface Mount Application No Suffix Straight Lead (I-PAK, “- I” Suffix) Electrically Similar to Popular TIP31 and TIP31C


    Original     		PDF MJD31/31C TIP31 TIP31C MJD31 MJD31C

    mark a7 sot23 DIODE

    Abstract: GRM188R71H104K Y2 sot23 mark MARK Y6 Transistor Y5 sot23 C0603C224K4RAC C1608X5R0J106M C1608X7R1H104K GRM188R60J106M GRM188R71H221K
    Text: 19-0855; Rev 0; 7/07 MAX17010 Evaluation Kit Features The MAX17010 evaluation kit EV kit is a fully assembled and tested surface-mount printed circuit board (PCB) that provides the voltages and features required for active-matrix, thin-film transistor (TFT), liquid-crystal


    Original     		PDF MAX17010 300mA MAX17010 mark a7 sot23 DIODE GRM188R71H104K Y2 sot23 mark MARK Y6 Transistor Y5 sot23 C0603C224K4RAC C1608X5R0J106M C1608X7R1H104K GRM188R60J106M GRM188R71H221K

    sot-23 Marking 3D

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components MMBTA44 Features NPN Silicon High Surface Mount SOT-23 Package 150oC Junction Temperature Voltage Transistor


    Original     		PDF MMBTA44 350mW OT-23 OT-23 150oC 3D/A44 perature-------------------------------55 sot-23 Marking 3D

    TRANSISTOR a43

    Abstract: No abstract text available
    Text: Cascadable Amplifier 100 to 3200 MHz A43/ SMA43 V3 Features Product Image • ULTRAWIDE BANDWIDTH: 10-3200 MHz • EXCELLENT GAIN BLOCK: 11.5 dB TYP. • MEDIUM OUTPUT POWER: +8.5 dBm (TYP.) Description The A43 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA43 MIL-STD-883 SMA43 TRANSISTOR a43

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 10 to 400 MHz A411/ SMA411 V3 Features • • • • Product Image LOW NOISE FIGURE: 3.0 dB TYP. HIGH EFFICIENCY: 16 mA at +5 Vdc HIGH THIRD ORDER I.P.: +29 dBm at +8 Vdc (TYP.) MEDIUM OUTPUT LEVEL:+14.5 dBm at +8 Vdc (TYP.) Description


    Original     		PDF SMA411 MIL-STD-883

    TRANSISTOR a43

    Abstract: CA43 SMA43
    Text: A43 / SMA43 Cascadable Amplifier 100 to 3200 MHz Rev. V3 Features Product Image • ULTRAWIDE BANDWIDTH: 10-3200 MHz • EXCELLENT GAIN BLOCK: 11.5 dB TYP. • MEDIUM OUTPUT POWER: +8.5 dBm (TYP.) Description The A43 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA43 MIL-STD-883 TRANSISTOR a43 CA43 SMA43

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 1000 to 4000 MHz A4012 / SMA4012 V3 Features • • • • Product Image WIDE BANDWIDTH: 1.0 to 4.0 GHz TYP. HIGH GAIN: 18 dB (TYP.) MEDIUM OUTPUT POWER: +15.5 dBm (TYP.) LOW NOISE FIGURE: 3.5 dB (TYP.) Description The A4012 microwave amplifier is a discrete hybrid design,


    Original     		PDF A4012 SMA4012 MIL-STD-883 SMA4012 CA4012

    TRANSISTOR a45

    Abstract: No abstract text available
    Text: Cascadable Amplifier 1000 to 4000 MHz A45/ SMA45 V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA45 MIL-STD-883 SMA45 TRANSISTOR a45

    TRANSISTOR a45

    Abstract: No abstract text available
    Text: Cascadable Amplifier 1000 to 4000 MHz A45-1/ SMA45-1 V3 Features • • • • Product Image WIDE BANDWIDTH HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.1 dB (TYP.) GaAs FET DESIGN Description The A45-1 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance


    Original     		PDF A45-1/ SMA45-1 A45-1 MIL-STD-883 SMA45-1 CA45-1 TRANSISTOR a45

    Untitled

    Abstract: No abstract text available
    Text: Cascadable Amplifier 1000 to 4000 MHz A4011 / SMA4011 V3 Features • • • • Product Image LOW NOISE FIGURE: 2.0 dB TYP. MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc PHEMT AMPLIFIER Description The A4011 microwave amplifier is a discrete hybrid design,


    Original     		PDF A4011 SMA4011 MIL-STD-883 SMA4011 CA4011

    A4012

    Abstract: CA4012 MAAM-008738-CA4012 SMA4012
    Text: A4012 / SMA4012 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image WIDE BANDWIDTH: 1.0 to 4.0 GHz TYP. HIGH GAIN: 18 dB (TYP.) MEDIUM OUTPUT POWER: +15.5 dBm (TYP.) LOW NOISE FIGURE: 3.5 dB (TYP.) Description The A4012 microwave amplifier is a discrete hybrid design,


    Original     		PDF A4012 SMA4012 MIL-STD-883 A4012 CA4012 MAAM-008738-CA4012 SMA4012

    CA4011

    Abstract: A4011 SMA4011
    Text: A4011 / SMA4011 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image LOW NOISE FIGURE: 2.0 dB TYP. MEDIUM OUTPUT POWER: +18.3 dBm (TYP.) HIGH EFFICIENCY: 65 mA (TYP.) @ +5 Vdc PHEMT AMPLIFIER Description The A4011 microwave amplifier is a discrete hybrid design,


    Original     		PDF A4011 SMA4011 MIL-STD-883 A4011 CA4011 SMA4011

    CA45

    Abstract: SMA45 TRANSISTOR a45
    Text: A45 / SMA45 Cascadable Amplifier 1000 to 4000 MHz Rev. V3 Features • • • • Product Image HIGH GAIN 17.5 dB TYP. LOW NOISE: 4.5 dB (TYP.) HIGH OUTPUT POWER: +19.5 dBm (TYP.) GaAs FET DESIGN Description The A45 RF amplifier is a discrete hybrid design, which uses


    Original     		PDF SMA45 MIL-STD-883 CA45 SMA45 TRANSISTOR a45

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose


    OCR Scan     		PDF BUK464-60H SQT404

    Untitled

    Abstract: No abstract text available
    Text: b 3 b ? 2 5 4 G l O l b l G Sbb « M O T b O rder th is data sheet by MUN5211T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor TVansistor NPN Silicon Surface Mount Transistor With M onolithic Bias Resistor N etw ork M UN5211T1 M UN5212T1 M UN5213T1


    OCR Scan     		PDF MUN5211T1/D SC-70/SOT-323 2PHX31155F-0

    SE110N

    Abstract: A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode
    Text: Index Type No. Order Type No. Type Type No. 2SA1186 Type 16 2SC3830 16 2SC3831 16 2SC3832 19 2SC3833 2SA1294 1R 2SC3834 2SA1295 16 2SC3835 16 2SC3851 General Purpose Transistor 19 16 2SC3852 Low VcE(sat)-High hFE Transistor 18 19 2SC3856 16 2SC3857 Transistors for Audio Am plifier (Single Emitter)


    OCR Scan     		PDF 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1488 2SA1492 SE110N A4032 SE130N SE005N SE090N high hfe transistor FMQG5FM SLA7022M SE012 3gu diode