Untitled
Abstract: No abstract text available
Text: Photoelectrics Retro-reflective, Transistor Output Type PMR • Range: 10 m • Modulated, infrared light • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable • Fully protected
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Abstract: Power One PMP 6p power switching
Text: Photoelectrics Retro-reflective, Polarized, Transistor Output Type PMP • Range: 6 m • Modulated, visible light, polarized • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable
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MB02
Abstract: No abstract text available
Text: Photoelectrics Retro-reflective, Transistor Output Type PMR • Range: 10 m • Modulated, infrared light • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable • Fully protected
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transistor c-111
Abstract: TRANSISTOR 111
Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a genHigh-Current Gain Bandwidth Product fT : eral-purpose amplifier or switch in applications that
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PN2907A
MMBT2907A
PZT2907A
PN2907A,
MMBT2907A,
PZT2907A
OT-223)
PN2222A,
MMBT2222A,
transistor c-111
TRANSISTOR 111
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Untitled
Abstract: No abstract text available
Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General-Purpose Transistor Description Features The PN2907A, MMBT2907A, and PZT2907A are 60 V PNP bipolar transistors designed for use as a generalHigh-Current Gain Bandwidth Product fT : purpose amplifier or switch in applications that require
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PN2907A
MMBT2907A
PZT2907A
PN2907A,
MMBT2907A,
PZT2907A
OT-223)
PN2222A,
MMBT2222A,
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Untitled
Abstract: No abstract text available
Text: Photoelectrics Diffuse-reflective, Transistor Output Type PMD • Range: 800 mm • Modulated, infrared light • Rated operational voltage: 10 to 40 VDC • Output: 200 mA, NPN or PNP • Make or break switching function switch selectable • LED-indication for target detected
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PN2907A
Abstract: PN2222A/2907A
Text: PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor Features Description • High DC Current Gain hFE Range: 100 – 300 The PN2907A, MMBT2907A, and PZT2907A are 60 V -PNP bipolar transistors designed for use as a general-purpose amplifier or switch in applications that
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PN2907A
MMBT2907A
PZT2907A
PN2907A,
MMBT2907A,
PZT2907A
OT-223)
OT-223
PZT2907A)
PN2222A/2907A
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OMRON H7ET manual
Abstract: No abstract text available
Text: Self-powered Time Counter H7ET Subminiature Time Counters With Enhanced Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Seven digits, time range 0 to 3999d23.9h Key-protect switch to prevent front
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3999d23
999h59m59s
9999h59
4/IP66
1-800-55-OMRON
M064C-E3-1
OMRON H7ET manual
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OMRON H7et manual
Abstract: H7ET-N-B 7-segment diagram and application note two digit 7-segment display with decimal single digit 7 Segment Display diagram GHz PNP transistor omron proximity sensor POWER SUPPLY WITH 7 SEGMENT DISPLAY EN50082-2 circuit diagram water level sensor
Text: R Self-Powered Time Counter H7ET Subminiature Time Counters With Enhanced Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Seven digits, time range 0 to 3999d23.9h Key-protect switch to prevent front resetting
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3999d23
999h59m59s
9999h59
4/IP66
1-800-55-OMRON
OMRON H7et manual
H7ET-N-B
7-segment diagram and application note
two digit 7-segment display with decimal
single digit 7 Segment Display diagram
GHz PNP transistor
omron proximity sensor
POWER SUPPLY WITH 7 SEGMENT DISPLAY
EN50082-2
circuit diagram water level sensor
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PPCP
Abstract: transistor BU 210 SS TRANSISTOR namur npn transistors,pnp transistors transistor DJ marking transistor BU 110 NPCP dj bk
Text: Proximity Sensors Inductive ABS Housing Types DJ, Ø 77 and EI, Ø 77 • ABS housing, Ø 77 mm • Sensing distance: 40 mm • Power supply: 8.2 VDC NAMUR 24 VDC • Output: Namur (DIN 19234) Transistor NPN or PNP, make or break switching • Protection: Reverse polarity
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DJ40/EI
PPCP
transistor BU 210
SS TRANSISTOR
namur
npn transistors,pnp transistors
transistor DJ marking
transistor BU 110
NPCP
dj bk
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OMRON H7ec manual
Abstract: TRANSISTOR 12 GHZ EN50082-2 RF NPN POWER TRANSISTOR 2.5 GHZ 7-segment diagram and application note transistor npn high speed switching omron H7EC H7EC-N-B transistor CR NPN push switch
Text: R Self-Powered Tachometer H7EC Subminiature Total Counters With Improved Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Eight-digits, counting range 0 to 99999999 Key-protect switch to prevent front resetting
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4/IP66
1-800-55-OMRON
OMRON H7ec manual
TRANSISTOR 12 GHZ
EN50082-2
RF NPN POWER TRANSISTOR 2.5 GHZ
7-segment diagram and application note
transistor npn high speed switching
omron H7EC
H7EC-N-B
transistor CR NPN
push switch
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cnc wiring
Abstract: inductive proximity sensor npn PROXIMITY inductive ic "inductive Proximity Sensor" transistor npn 150 volt npn transistor 70 volt 800 volt PNP transistor
Text: Proximity Sensors Inductive Rectangular Plast Housings Types IC, ID, Cable and Plug • • • • Nickel-plated brass housings Sensing distance: 2 or 4 mm For flush mounting ID25 or non-flush mounting (IC17) Output: IC 17: Transistor, NPN/PNP, make or break
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PROXIMITY inductive ic
Abstract: inductive sensor IC
Text: Proximity Sensors Inductive Rectangular, Nickel-plated Brass Housing Types IC, ID, Cable and Plug • • • • Nickel-plated brass housings Sensing distance: 1.5 or 5 mm For flush mounting Output: IC 08: Transistor, NPN/PNP, make switching ID 25: Transistor, NPN/PNP, make switching or
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OMRON H7ec manual
Abstract: H7EC battery replacement omron h7ec H7EC N COUNTER H7EC-N-B H7EC-NV-B EN50081-1 EN50082-2 H7EC-NV RELAY LOGIC LIFT control circuit
Text: R Self-Powered Count Totalizer H7EC Subminiature Total Counters With Improved Appearance and Features Large display with 8.6 mm 0.338 in height Available with backlit LCD PNP/NPN DC voltage input available Eight-digits, counting range 0 to 99999999 Key-protect switch to prevent front resetting
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4/IP66
1-800-55-OMRON
OMRON H7ec manual
H7EC battery replacement
omron h7ec
H7EC N COUNTER
H7EC-N-B
H7EC-NV-B
EN50081-1
EN50082-2
H7EC-NV
RELAY LOGIC LIFT control circuit
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Untitled
Abstract: No abstract text available
Text: Proximity Sensors Inductive Rectangular, Nickel-plated Brass Housing Types IC, ID, Cable and Plug • • • • Nickel-plated brass housings Sensing distance: 1.5 or 5 mm For flush mounting Output: IC 08: Transistor, NPN/PNP, normally open ID 25: Transistor, NPN/PNP, normally open
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jfet differential transistor
Abstract: JFET 401 U402 N CHANNEL FET
Text: LS318 LOG CONFORMANCE MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES ∆re =1Ω TYP. LOG CONFORMANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted Collector Current IC Maximum Temperatures Storage Temperature Range Operating Junction Temperature
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LS318
250mW
500mW
LS318
jfet differential transistor
JFET 401
U402 N CHANNEL FET
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J201 Replacement
Abstract: 2N5019 "direct replacement"
Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation
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IT124
IT124
250mW
500mW
J201 Replacement
2N5019 "direct replacement"
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Untitled
Abstract: No abstract text available
Text: LS310 LS311 LS312 LS313 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 200 @ 10µA-1mA VERY HIGH GAIN TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 250MHz TYP. @ 1mA C1 E1 C2 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted
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LS310
LS311
LS312
LS313
250MHz
250mW
500mW
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Untitled
Abstract: No abstract text available
Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS301
LS302
LS303
100MHz
250mW
500mW
LS301ithic
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Untitled
Abstract: No abstract text available
Text: IT120A IT120 IT121 IT122 MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 E1 C2 TA= 25°C unless otherwise noted IC Collector Current
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IT120A
IT120
IT121
IT122
250mW
500mW
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TRANSISTOR M5
Abstract: Transistor npn BSF 70
Text: y Proximity Sensors Inductive ant r r a Short body, Stainless Steel Housing sw r a e Types IA, M5 5y • Miniature stainless steel housing M5 • Short body • Sensing distance: 1,2 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching
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J201 spice
Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated
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LS3250
OT-23
J201 spice
dual P-Channel JFET sot23
2n4416 transistor spice
LS3250A
a7 surface mount diode
J202 TRANSISTOR
fet j310
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transistor pnp 3015
Abstract: EC1808TBOP EC1808NPCP EC1808PPCP EC1808NPOP
Text: Proximity Sensors Capacitive Thermoplastic Polyester Housing Types EC, M18, M30, Cable • Thermoplastic polyester housing, cylindrical • Diameter: M18, M30 • Adjustable sensing distance • Power supply: 10 to 40 VDC 20 to 250 VAC • Output: Transistor NPN or PNP, make or
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diode m5p
Abstract: switch transistor pnp or npn NPN switching power transistor npn transistor 70 volt IA 05 IA05BSF m5x0.5 DIMENSIONS transistor BSF
Text: y ant r r a sw r a e 5y Proximity Sensors Inductive Short body, Stainless Steel Housing Types IA, M5 w/short-circuit protection • Miniature stainless steel housing M5 • Short body • Sensing distance: 1.0 mm • Power supply: 10 to 30 VDC • Output: Transistor NPN/PNP, make or break switching
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