sot-363 702
Abstract: MPS5172 "cross-reference" BC237 BC307 MMVL3700T1
Text: CHAPTER 4 Index http://onsemi.com 1121 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
sot-363 702
MPS5172 "cross-reference"
BC237
BC307
MMVL3700T1
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low noise transistors bc638
Abstract: BC548 MPS5172 "cross-reference" BC237 LOW NOISE BC638 BC449 "cross-reference" bc307b DTC114E SERIES 2N6520 DIODES MPF4856
Text: CHAPTER 4 Index http://onsemi.com 1121 http://onsemi.com 1122 Subject Index B J Bias Resistor Transistors BRTs . . . . . . . . . . . . . . . . . . . 17 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Switches and Choppers . . . . . . . . . . . . . . . . . . . . . . . . . 22
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MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
low noise transistors bc638
BC548
MPS5172 "cross-reference"
BC237
LOW NOISE BC638
BC449 "cross-reference"
bc307b
DTC114E SERIES
2N6520 DIODES
MPF4856
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thermistor 100k
Abstract: 0402CG101J9B200 600S0R3BT250XT 600S1R5BT250XT transistor smd 303 transistor SMD DK PANASONIC ECR SMD TRANSISTOR R90 SLD1026Z SLD1026Z-EVAL-E
Text: Design Application Note AN-090 2 x SLD-1026Z LDMOS Application Circuits Abstract Bias Discussion Sirenza Microdevices' SLD-1026Z is a high performance LDMOS transistor designed for operation up to 2.7 GHz. This application note demonstrates balanced configuration application circuits operating in the 800,
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AN-090
SLD-1026Z
EAN-105860
thermistor 100k
0402CG101J9B200
600S0R3BT250XT
600S1R5BT250XT
transistor smd 303
transistor SMD DK
PANASONIC ECR
SMD TRANSISTOR R90
SLD1026Z
SLD1026Z-EVAL-E
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pnp 8 transistor array
Abstract: ALA401 Boron 220 resistor array ALA402 RESISTORS transistor array pnp npn 8 transistor array GL RESISTOR ARRAY
Text: A T & T MELEC I C 2SE D • G0 5 G 0 2 b 000^54 1 Preliminary Data Sheet ALA401/402 Semicustom Linear Arrays Description The ALA401/402 Semicustom Linear Arrays are fabricated using a complementary bipolar integrated cir cuit (CBIC) process that offers the advantages of vertical NPN and PNP transistors. CBIC technology
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005005b
0002T54
ALA401/402
ALA401
ALA402
5002b
100x10-3
pnp 8 transistor array
Boron
220 resistor array
RESISTORS
transistor array pnp
npn 8 transistor array
GL RESISTOR ARRAY
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700 allen-bradley
Abstract: No abstract text available
Text: 6115950 MICROSEMI CORP/POWER 71C 00312 Series D T - 3 3 - f "5 PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes *700 Volts FEATURES • High Voltage Rating - 700 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue
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A22 T transistor
Abstract: RS Components transistor t03
Text: RS Technical Library T03 Transistor Cover Dimensions RS Stock No 402-131 A22-4015 T 0 3 thin flange 1.375 34 .93 480 ( 12 . 19 ) 00 in oo d m CM RS Components shall not b e liable for any liability or loss of any nature (howsoever caused and whether or not due to RS components' negligence)
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A22-4015
A22 T transistor
RS Components
transistor t03
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Avantek UTC 519
Abstract: Avantek UTC 518 UTO 211 AVANTEK Avantek UTO-1004 AVANTEK utc AVANTEK utc 1004 UTO-1004 UTO1004 Avantek utc 573 TC 14066
Text: AV A N T E K INC 7b deT| i m n t b □□□4sn Thin Film Cascadable Amplifier 10-1000 MHz 1004 Series o • t - 7 4 -/j ~&/ ^ 0AVAN TEK FEATURES • + 22.0 Output Power UTC 1004 TC 1 Case p. 398 UTO-1004 T O 8T C ase (p. 402) ELECTRICAL SPECIFICATIONS (Measured in a 50-ohm system @ + 15 VDC nominal unless otherwise noted)
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t-74-/j~
UTO-1004
50-ohm
Avantek UTC 519
Avantek UTC 518
UTO 211 AVANTEK
Avantek UTO-1004
AVANTEK utc
AVANTEK utc 1004
UTO-1004
UTO1004
Avantek utc 573
TC 14066
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diode sy 162
Abstract: SC236D 6P14P diode sy SF 127 C GF147S 6D22S 6P45S ECC88 6n23p
Text: SERVICE-MITTEILUNGEN VEB IN DUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN iR iU ii 1r a d i o - t e i e v i s l o n I SEITE JUNI 1 9 8 1 b 1 - 7 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig / S SERVICE-ANLEITUNG zum Translstor-Taschenempfänger "Signal 402"
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cd4538b application
Abstract: CD4538B MC14538 equivalent CD45388 15-V CD4098B MC14538 RCA-CD4538B
Text: G E S OL I D STATE 01 DEI ' 3 fi 7 S 0 f l l - : : G0 1 3 4 0 2 4 i ~402 _ _D T - 5 H f CD4538B Types CMOS Dual Precision Monostable Multivibrator High-Voltage Types 20-Volt Rating Features: • Retriggerable/resettable capability ■ Trigger and reset propagation delays
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00134DH
CD4538B
20-Volt
-Ht51ll
RCA-CD4538B
92CM-3309I
CD4S38BH.
92CS-36706
cd4538b application
MC14538 equivalent
CD45388
15-V
CD4098B
MC14538
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c454
Abstract: No abstract text available
Text: HIGH VOLTACI TRANSISTORS I TO-3 le Veto Ic SUS 25*C MAX SPC-401 SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-423^ Sii C-454 S^C-425 ♦ V cex @ t} 9 PT TYPE NO. lA/atts A V 100 100 80 100 2.0 3.5 3.5 3.5 300 325 200 300 3¿S 16 *5 3.!> 1Ò0 100 3.5 3.5 iôô
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SPC-401
SPC-402
SPC-410
SPC-411
SPC-413
SPC-423
SPC-423^
C-454
C-425
SPC-413
c454
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tungsram
Abstract: rft halbleiter service-mitteilungen service mitteilungen rft RFT Service Mitteilung Tesla VEB Funkwerk Erfurt VEB Kombinat Mitteilung VEB RFT Servicemitteilungen
Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D FE R N S E H E N r a d i o - television SEITE AUSGABE: OKTOBER E E 1 - 8 Der Taschenempfänger "QUARTZ - 402" setzt die Reihe der Impor te ähnlicher Empfänger aus der Sowjetunion fort. Abgesehen von
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QUARTZ402"
145x213x73
III/18/379
tungsram
rft halbleiter
service-mitteilungen
service mitteilungen rft
RFT Service Mitteilung
Tesla
VEB Funkwerk Erfurt
VEB Kombinat
Mitteilung VEB RFT
Servicemitteilungen
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PLB16002U
Abstract: No abstract text available
Text: -7 = -3 3 - O S ' P re lim in a ry s p e c ific a tio n P h ilip s S e m ic o n d u c to rs PLB16002U SbE D 711GÛEt 0 0 M b 402 3b2 FEATURES D E S C R IP T IO N • Input m atching cell allows an easier design of circuits • Diffused em itter ballasting
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PLB16002U
FO-229
00Mb402
PLB16002U
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b20100
Abstract: ptc 205 ir 520 T0-204MA
Text: Series PTC 401, PTC 402 High Voltage NPN Transistors 3 Amperes * 700 Volts FEATURES • High Voltage Rating - 7 0 0 Volts • Industrial and Military Applications • Superior Resistance to Thermal Fatigue APPLICATIONS • Switching Regulators • PWM Inverters
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BUL 380
Abstract: BUL 390 NPN Transistor 10A 24V transistor sd 965 SD1400-03 M118 930MHZ 25CC SD1400-3
Text: H ffS-nnnnj-*. »ra r* S IV U C r O S e m i P ro g re s a P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 b U l 4 U U -0 RF & MICROWAVE TRANSISTORS 900-960MHZ CLASS C, BASE STATIONS CLASS C TRANSISTOR
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900-960MHZ
930MHz
SD1400-03
SD1400-3
960MHz
SD1400-3
BUL 380
BUL 390
NPN Transistor 10A 24V
transistor sd 965
M118
930MHZ
25CC
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Untitled
Abstract: No abstract text available
Text: H m www S M lC ITßSQ uil « » mm W « w «UPI W « 1^0 Commerce Drive Afxfx Montgomeryville, PA 18936-1013 Tel: {215 631-3840 o n « o U 1 4 U U ” d> RF & MICROWAVE TRANSiSTORS 9Q0-960MHZ CLASS C, BASE STATIONS G LA S S C T R A N S IS T O R FREQUENCY
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9Q0-960MHZ
SD1400-03
SD1400
968MHz
SD1400-3
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C2223
Abstract: HR-R capacitor C2223 ic C2223-18 2238 capacitor 24v
Text: M i c r o s e m i 140 Commerce Drive Montgomeryvilie, PA 18936-1013 Tel: 215 631-9840 T C C 2 2 2 3 - 1 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQ ïNCY 7. ? .-? 3GHz POWER OUT 18.SW POWER GAIN fi 5dB VOLTAGE ?4 (IV HERMETIC PACKAGE
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1CC2223-18
wi1870
C2223-18
13S/3
C2223
HR-R capacitor
C2223 ic
C2223-18
2238 capacitor 24v
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transistor k 4110
Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili
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i-noa36Â
osit34Â
354G-01
transistor k 4110
K 4014 transistor
vqe 14e
TLO51
wf vqe 24 d
DIODE 4014
IC 4022
MOC70
S 417T
WF VQE 13
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m147 transistor
Abstract: 1029F M147 ci m147 SD1868
Text: Hi f I r l / C lU O J v f I If P ro g re s s P o w ered b y T ec h no log y 140 Com m erce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 SD1868 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 1.6-1.65GHz POWER OUT
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SD1868
65GHz
SD1868
S88SDI868-34
m147 transistor
1029F
M147
ci m147
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2sb772 TO92
Abstract: 2sb772 2SB772S 2SD882
Text: m Semiconductor 2SB772/2SB772S PNP Epitaxial Silicon Transistor AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING • Complement to 2SD882 M AXIM U M R A TIN G S ITa = 2 5 X. \ Symbol 2SB772S 2SB772 Unit Characteristic Max Max V -50 -50 Collector-Base Voltage
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2SB772/2SB772S
2SD882
2SB772S
2SB772
300-500-L000
371R4Ã
2sb772 TO92
2SD882
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TCC2223-18
Abstract: tic 223 M147 SD1870 23GHz filter
Text: m m m R F Products m Microsemi P ro g re ss Pow ered b y T ech nology 140 C o m m erce D rive M o n tg o m e ry v ille , PA 18936-1013 Tel: 215 631-9840 TC C 22 2 3 -1 8 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS FREQUENCY 2.2-2 3GHz
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TCC2223-18
SD1870
2223-1B
TCC2223-18
10OpF
000pF
988TCC2223-18-04
tic 223
M147
23GHz filter
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transistor c 6073
Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005
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00003b2
TQ-204MA
PTC102
transistor c 6073
TRANSISTOR 431p
transistor c 6073 circuit diagram
ptc 820
TF PTC
PTC886
6063 T0
ptc 205
ptc 500
ptc b
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Untitled
Abstract: No abstract text available
Text: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING
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AM81719-030
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2SD2436
Abstract: 2SC4969 2SB1584 2sd2433 2sb1582 2sb1583 2sd2434 2SC4971 2sc4973 2sd2432
Text: T Mini 3-pin Package IW f é Outline Transistors, Diodes s T S - a a O S m / 'C y 'f r - S / 't t . ? & |M > 3 il}:F 5 - S !i:ifc '< . a e.cc u — K a u t i J i t f i i t t i t £ / * • : / * r - y - e t c n - j f y - y 0) f f * Art) .7mmt » < , * » 0 5 f 5 lW b l= lllttt' t l i t o
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machine71
2SC4972
2SC4974
2SC4975
2SC4973
MA152A
MA1U152A
MA1U152K
MA152K
MA1U152WA
2SD2436
2SC4969
2SB1584
2sd2433
2sb1582
2sb1583
2sd2434
2SC4971
2sc4973
2sd2432
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4027 ram
Abstract: 4027-3 ITT 4027 pin diagram 4027 4027 ttl 56482
Text: Signetics Memories - R A M 4027-4096 Bit Dynamic RA M C O N N E C T IO N D IA G R A M G E N E R A L D E S C R IP T IO N T h e 4 0 2 7 is fabricated with n-channe! silicon gate tech nology fo r high perform ance and high functional density, and uses a single transistor d ynam ic storage cell and
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16-pin
4027 ram
4027-3 ITT
4027 pin diagram
4027
4027 ttl
56482
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