CDLE-420-297
Abstract: No abstract text available
Text: EVERLIGHT ELECTRONICS CO.,LTD. CDLE-420-297 Device Number : REV.: 2 Page: 1/4 3.0mm Round Type LED Lamps PART NO. : 4204-10SURC/S530-A5 █ Features : ● Choice of various viewing angles ● Available on tape and reel. ● Reliable and robust ECN: █ Package Dimensions:
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CDLE-420-297
4204-10SURC/S530-A5
30min
CDLE-420-297
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products M o to ro la P r e fe r re d D ev ic e TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS
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MMDF3P03HD/D
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S5P02H
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSF5P02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M S F 5P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors SINGLE TMOS POWER MOSFET 8.7 AMPERES
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MMSF5P02HD/D
S5P02H
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMDF3N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F 3N 02 H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors MiniMOS™ devices are an advanced series of power MOSFETs
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MMDF3N02HD/D
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BRB20100CT
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRB201OOCT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Power R ectifier M B R B 201O O C T D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the use of the Schottky Barrier principle
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MBRB201OOCT/D
418B-02
BRB20100CT
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TSF3N03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TSF3N 03H D Medium Power Surface Mount Products Motorola Preferred Device TM OS Single N -C hannel Field E ffect Transistor Micro8™ devices are an advanced series of power MOSFETs
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TSF3N03HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P03HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T S F 2P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Single P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs
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MTSF2P03HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD20N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet HDTMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand
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MTD20N06HD/D
69A-13
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M DF2C01HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M M D F2C 01 HD Medium Power Surface Mount Products Motorola Preferred Device Com plem entary TMOS Field Effect Transistors COMPLEMENTARY DUAL TMOS POWER FET
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DF2C01HD/D
MMDF2C01HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M M D F6N02HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMDF6N02HD Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 6.0 AMPERES
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F6N02HD/D
MMDF6N02HD
DF6N02HD/D
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Untitled
Abstract: No abstract text available
Text: M OTOROLA Order this document by M1MA141KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low
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M1MA141KT1/D
SC-70
1MA141KT1
1MA142KT1
M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
SC-70/SOT-323
M1MA141KT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA141WKT1/D SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Switching Diode M1MA141WKT1 M1MA142WKT1 This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package
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M1MA141WKT1/D
SC-70
M1MA141/2WKT1
inch/3000
M1MA141/2WKT3
inch/10
M1MA141WKT1
M1MA142WKT1
SC-70/SOT-323
A141W
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CIL TRANSISTOR 188
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTB52N06V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TM O S V™ MTB52N06V Motorola PrtfsrrM l Dw tc* Power Field Effect Transistor D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate T M O S V is a new technology designed to achieve an on-resistance
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MTB52N06V/D
MTB52N06V
CIL TRANSISTOR 188
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTSF2P02HD/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M T S F 2P 02H D Medium Power Surface Mount Products TMOS Single P-Channel Field Effect Transistor Motorola Preferred Device Micro8™ devices are an advanced series of power MOSFETs
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MTSF2P02HD/D
2PHX43416-0
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B20100C
Abstract: 201OOCT MBRB201OOCT
Text: MOTOROLA Order this document by MBRB201OOCT/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SWITCHMODE™ Pow er R e c tifie r MBRB201OOCT D2PAK Surface Mount Power Package Motorola Preferred Device The D2PAK Power Rectifier employs the use of the Schottky Barrier principle
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MBRB201OOCT/D
O-220
MBRB201OOCT
MBRB20100CT/D
B20100C
201OOCT
MBRB201OOCT
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3B2S
Abstract: df3p03
Text: M OTOROLA Order this document by MMDF3P03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 3P 03H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 100 m ii
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MMDF3P03HD/D
3B2S
df3p03
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA Order this document by MTD20P03HDL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P03HDL HDTMOS E-FET™ High Density Power FET DPAK for S urface Mount M o to r o la P r e fe r r e d D e v ic e TMOS POWER FET LOGIC LEVEL 19 AMPERES
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MTD20P03HDL/D
TD20P03HDL
69A-13
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3401LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3401LT1 Silicon Pin Diode Motorola Preferred Device This device is designed primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits. Supplied in a Surface Mount
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MMBV3401LT1/D
MMBV3401LT1
OT-23
O-236AB)
V3401LT1/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MUN5211DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 S E R IE S NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5211DW1T1/D
MUN5211DW1T1
OT-363
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MTD2955V
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate
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MTD2955V/D
MTD2955V
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un5313
Abstract: 5311DW
Text: MOTOROLA Order this document by MUN5311DW1T1/D SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 S ER IES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a
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MUN5311DW1T1/D
MUN5311DW1T1
OT-363
un5313
5311DW
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by m t d f i n o 2h d /d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TD F1N 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel Field Effect Transistor DUAL TMOS POWER MOSFET
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TDF1N02HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD1302/D SEMICONDUCTOR TECHNICAL DATA Advance Information H D T M O S E-FET H igh D e n s ity P o w e r FET DPAK fo r S u rfa c e M o u nt M TD1302 TMOS POWER FET 20 AMPERES 30 VOLTS RDS on = 0.022 OHM N-Channel Enhancement Mode Silicon Gate
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MTD1302/D
TD1302
69A-13
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TD9N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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TD9N10E/D
MTD9N10E/D
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