PRSS0004ZC-A
Abstract: No abstract text available
Text: Magazine T03PL code Magazine PVC material Polyvinyl chloride Package name Renesas code Previous code TO-3PL* PRSS0004ZC-A T3PL Maximum storage No. Maximum storage No. Maximum storage No. Transistor/Magazine Magazine/Inner box Transistor/Inner box 25 10 250
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Original
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T03PL
PRSS0004ZC-A
PRSS0004ZC-A
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PDF
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M124
Abstract: R605A OE R611 m210 g
Text: PACKAGE DIMENSIONS mm T03PL E m a x. ' M110 5.0 ¿ 3 .2 .20 <§ 1 l° ‘ f « 3 ? « 101 o 4. CD 1 2 3 | 1 ! in I 3.0 •Ii 2.0 <n E E 0. 6 „ 3. 0 G a te C o lle c to r E m itte r 5.5 3.5 T03PF M116 ;° J 'eri 2 °± 2 - 0 ., 0.6 ; £ 3.0 I i iS 1 ij
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OCR Scan
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T03PL
T03PF
R606A
R604A
R607A
R605A
28max
4-ERG78
M124
R605A
OE R611
m210 g
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PDF
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1MBH50-090
Abstract: electrical symbols LC resonant circuit schematic symbols lc50a
Text: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply
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OCR Scan
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1MBH50-090
T03PL
1MBH50-090
electrical symbols
LC resonant
circuit schematic symbols
lc50a
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PDF
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2SK955
Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK955
2SK899
2SK2001
2SK1660
2SK725
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PDF
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ECG2322
Abstract: s34 zener diode diode t48 s34 diode philips ECG2328 philips ECG2329 ECG2328 ECG2331 ECG zener diode 2 Amp zener diode
Text: PHILIPS E C G INC SHE D Transistors c o n rd j ECG Type Description and Application • bbSB^fi 000715^ S34 « E C G (Maximum Ratings at Tc = 25°C Unless Otherwise Noted Collector To Base Volts Collector To Emitter Volts Base to Emitter Volts BV c b o BV c e o
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OCR Scan
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ECG2315
O-220
ECG2316
O-218)
ECG2317
ECG2318
O-220J
T41-1
ECG2337
ECG2322
s34 zener diode
diode t48
s34 diode
philips ECG2328
philips ECG2329
ECG2328
ECG2331
ECG zener diode
2 Amp zener diode
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PDF
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FS12UM-5
Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Text: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C
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OCR Scan
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O-220
O-220S
O-220FN
FS10UM-5
FS10VS-5
72R4L
FS12UM-5
FS12KM
MARKING CODE mosfet
FS16UM5
FS20KM-6
FS12KM-5
FS20UM-5
FS16KM-5
FS10KM-5
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PDF
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T0220F
Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Text: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)
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OCR Scan
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2SK1082
2SK962
2SK1217
T03PF
2SK1512
2SK1511
2SK1008-01
T0220
2SK1010-01
T0220F
T0-220F
2SK1084
2SK1388
2MI200F-025
2sk1018
2SK1390
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PDF
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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OCR Scan
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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PDF
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Step-Down Voltage Regulator smd 5pin ic
Abstract: 3296 Variable Resistor hm 9102 d pin diagram for 3296 Variable Resistor IC 7447 PIN CONNECTION DIAGRAM hm 9102 SMD 5pin co CI 7447 BSI-3.3S2ROFM SMD 3pin qf
Text: Output Voltage 1.8V-3.3V, 3V-5V Ultra High Efficiency 93% TO-3PL Size, Step-Down Non-lsolated Type DC-DC Converter Beiinix IB Watt BSI-mini Series BSI-mini Series is an ultra small, TO -3PL packaged type, and non-isolated type step-down DC-DC converter which has achieved ultra high efficiency by the latest synchronous rectification circuit technology. BSI-m ini Series
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OCR Scan
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BDD20041118
Step-Down Voltage Regulator smd 5pin ic
3296 Variable Resistor
hm 9102 d
pin diagram for 3296 Variable Resistor
IC 7447 PIN CONNECTION DIAGRAM
hm 9102
SMD 5pin co
CI 7447
BSI-3.3S2ROFM
SMD 3pin qf
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PDF
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T70 N03 412
Abstract: FS70SM FS10UM-2
Text: S h o r t F o rm D 3 t3 Powerex, Inc., 200 H lllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET - Low Voltage Trench Gate (continued) 10.0V Driver Voltage n-channel MOSFETs Electrical Characteristics Maximum Ratings, Tc = 25°C
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OCR Scan
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O-220
O-220S
T0-220FN
FS10AS-2
FS10UM-2
FS10VS-2
FS10KM-2
72R4L
T70 N03 412
FS70SM
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PDF
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FX50SM-2
Abstract: FX20KM-06 FX50VS06 FX6AS-06 fx6um-06 FX30KM06 marking Td FX3AS-06 FX6KM-06
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Short Form Data Selector Guide Discrete MOSFET Low Voltage Trench Gate - 10.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device V qss •d VGSS Number (V)
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OCR Scan
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fx6as-03
fx6km-03
to-220fn
fx6um-03
to-220
fx6vs-03
to-220s
fx3as-06
fx3km-06
FX50SM-2
FX20KM-06
FX50VS06
FX6AS-06
fx6um-06
FX30KM06
marking Td
FX6KM-06
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PDF
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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OCR Scan
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001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
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PDF
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2SK2079-01M
Abstract: 2SK2079 2SK2001-01M 2SK1549 2SK900 2SK901 2SK902 2SK905 2SK906 2SK947M
Text: MOSFETs F-l Series Low RdS ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Miiximum Ratin as I d (A) V d s s (V ) 45
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OCR Scan
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2SK905
2SK906
2SK900
T0220
2SK947M
T0220F15
2SK901
2SK1549
T03PF
2SK902
2SK2079-01M
2SK2079
2SK2001-01M
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PDF
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS SIE » MMTbSÜS ODllOMM 473 IHIT4 T 3 GN6075E Silicon N Channel IGBT HITACHI Application Mar. 1992 TO-3PL High speed power switching Features • High speed switching tf = 200 ns typ, 400 ns max • Low on saturation voltage v CE(sat) = 4V m ax
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OCR Scan
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GN6075E
GD110MT
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PDF
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2SK962
Abstract: T03P 2MI200F-025
Text: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)
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OCR Scan
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2SK1082
2SK962
2SK1217
2SK1512
2SK1511
T03PF
2SK1008-01
2SK1010-01
2SK1012-01
2SK1014-01
T03P
2MI200F-025
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PDF
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2SK2079
Abstract: 2SK2079-01M
Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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OCR Scan
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2SK2079
2SK2079-01M
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PDF
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T0247AC
Abstract: IRG4PC50FD T0-220AB bup314 T0-247AC bup314d IRG4BC40U T0220AB IRG4PC50UD BUP212
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 electronics CunoBbie TpaH3MCTopbi IGBT copTMpoBKa no HanpflweHMro UCE TpaH3Mcrop IGBT (Insulated Gate Bipolar Transistor) npeflCTaBrmeT c o 6 om 6 M n o r m p H b iM T p a H 3 M C T o p c M3 o n M p o B a H H H M 3 a T B o p o M , y n p a B r m e M b iM H a n p a ^ e H M e M . O h x a p a K T e p M 3y e T c a b h c o k m m
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OCR Scan
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B03M0WH0CTb
npe06pa30Baiennx
paUP212
T0220AB
BUP213
BUP313
T0218AB
BUP313D
T0247AC
IRG4PC50FD
T0-220AB
bup314
T0-247AC
bup314d
IRG4BC40U
T0220AB
IRG4PC50UD
BUP212
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PDF
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IGBT 200A 1200V
Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D
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OCR Scan
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bup203
t0220)
BUP212
BUP213
BUP313
BUP313D
BUP314
BUP314D
GT20D101-T0s
GT20D201-T0s
IGBT 200A 1200V
T0247
T0220AB
BUP313D
IGBT IRG4BC20KD
igbt 20A 1200v
IGBT 1200V 60A
T0247A
BUP314D
MG50Q2YS40
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PDF
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marking code H8
Abstract: FS30UMJ-06 MP-3 Package MOSFET A20 N03
Text: m u a s * Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O f t F O F /T i D â t d Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage n-channel MOSFETs Max imum Ratings, Tc = 25°C Electrical Characteristics
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OCR Scan
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FS10ASJ-03
FS10UMJ-03
O-220
FS10VSJ-03
O-220S
FS10KMJ-03
O-220FN
FS30ASJ-03
FS30UMJ-03
marking code H8
FS30UMJ-06
MP-3 Package
MOSFET A20 N03
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PDF
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FS30ASH03
Abstract: No abstract text available
Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h O C t F O fT T i D d t 3 Selector Guide Discrete MOSFET - Low Voltage Trench Gate 2.5V Driver Voltage n-channel MOSFETs Maximum Ratings, Tc = 25°C Electrical Characteristics
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OCR Scan
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FS10ASH-03
FS10UMH-03
O-220
FS10VSH-03
O-220S
FS10KMH-03
O-220FN
FS30ASH-03
FS30UMH-03
FS30ASH03
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PDF
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7D30A-050EHR
Abstract: 7D50A-050EHR 7D75A-050EHR 7D150A-050EHR EXB841 6D20A-050EJR fuji darlington module 7d30a-050 fuji ipm 7d30a
Text: COLLIER SEMICONDUCTOR INC MflE 22307*15 00 015 7b 3ÖÜ J> ICOL Power Darlington Modules <S • EXB850 • EXBS40 900 VOLT IGBTs FOR RESONANT APPLICATIONS Device Type IMB50-090A MBT001 VCE8 Votts (min) 900 900 le Amps (min) 50 60 Rth (J-c) °C/Watts (max)
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OCR Scan
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000157b
IMB50-090A
MBT001
T03PL
EXB850
EXB851
EXB851
EXB840
EXB841
7D30A-050EHR
7D50A-050EHR
7D75A-050EHR
7D150A-050EHR
6D20A-050EJR
fuji darlington module
7d30a-050
fuji ipm
7d30a
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PDF
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1MBH50-090
Abstract: No abstract text available
Text: 1MBH50-090 50A Fuji Power Module Outline Drawings • Features • High Voltage (900V) • Low Saturation Voltage • Voltage Drive a 2.0 1 ■ A p p lications 5.45 5 .45 • Resonant Mode eS I—'}J i h“ != .1 — 1. cd • Microwave Ovens • Power Supply
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OCR Scan
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1MBH50-090
T03PL
1MBH50-090
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PDF
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2SK1134
Abstract: 2SK2000A 2SK900 2SK905 2SK905A 2SK906 2SK906A 2SK947M
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 Volts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
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PDF
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2mb175
Abstract: 1MBH60-090 2MB175L-060 HIGH VOLTAGE DIODE for microwave ovens 1mbh 1MBH65-090 ERD60-100 T0220AB T03PL imbi300
Text: \W]IGBT mold types • • • • High speed sw itching • Low saturation vo ltag e V o lta g e drive m e th o d perm its lo w p o w er drive Su ited fo r high fre q u e n c y p o w e r supplies, such as m icro w a ve ovens W h e n using these IGBTs, FUJI'S fast recovery d io d e ER D 60-100 is required.
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OCR Scan
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ERD60-100
1MBH60-090
T03PL
1MBH65-090
1MBH65
2MBI300LB
2MBI400L-060
2mb175
2MB175L-060
HIGH VOLTAGE DIODE for microwave ovens
1mbh
T0220AB
imbi300
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PDF
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