BFG425W
Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:
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RNR-T45-97-B-0688
900MHz
BFG425W
BFG425W
900MHz.
900MHz,
900mhz driver
amplifier 900mhz
DRIVER DESIGN
philips c3
RF 900MHz
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BGA2003
Abstract: MLG1608 sot343r2
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-98-B-0709 Author : R. Damen Date : 1998-October-30 Department : Philips Semiconductors Product Group : Discrete SemiConductors - Nijmegen Netherlands Copy : APPLICATION NOTE
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RNR-T45-98-B-0709
1998-October-30
BGA2003
BGA2003:
BGA2003
MLG1608
sot343r2
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X04211
Abstract: X04421 BGA2031 MLG1608 PCS1900 X0421
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. : RNR-T45-99-BAuthor : Jeroen Bouwman and Jarek Lucek Date : 1999-October 18 Department : Philips Semiconductors Product Group : Discrete Semiconductors - Nijmegen Netherlands , Mansfield MA, USA
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RNR-T45-99-BAuthor
1999-October
BGA2031
PCS1900
BGA2031
X04211
X04421
MLG1608
X0421
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B 0920
Abstract: Philips X7R Philips npo 0805 SOT343 C5 RNR-T45-97-B-0920 bfg540w/x 0805CS transistor model list B0920 TRANSISTOR noise figure measurements
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The
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RNR-T45-97-B-0920
400MHz
BFG540W/X
BFG540W/X
400MHz,
400MHz:
400MHz
B 0920
Philips X7R
Philips npo 0805
SOT343 C5
RNR-T45-97-B-0920
0805CS
transistor model list
B0920
TRANSISTOR noise figure measurements
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2n2222+spice+model
Abstract: No abstract text available
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0920 : T.F. Buss : 20-11-97 : P.G. Transistors & Diodes, Development 400MHz LOW NOISE AMPLIFIER WITH THE BFG540W/X Abstract: This application note contains an example of a Low Noise Amplifier with the BFG540W/X RF-transistor. The
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RNR-T45-97-B-0920
400MHz
BFG540W/X
BFG540W/X
400MHz,
400MHz:
400MHz
2n2222+spice+model
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BFG425W
Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.
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RNR-T45-97-B-0686
Aug1997
900MHz
BFG425W
BFG425W
900MHz.
900MHz,
do30dBm,
-30dBm,
BFG425W APPLICATION
RNR-T45-97-B-0686
transistor bipolar driver schematic
Z048
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KIC77
Abstract: No abstract text available
Text: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D/E*T/T2/M/M2 Series KIC77A/B/C/D*T/T2 This IC is a system reset IC built in delay time circuit.
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KIC77A/B/C/D/E16
50T/T2/M/M2
KIC77A/B/C/D/E*
KIC77A/B/C/D*
KIC77
240/50/100/200/400ms
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t2F sot 23
Abstract: marking m2 KIC77
Text: SEMICONDUCTOR KIC77A/B/C/D/E16~50T/T2/M/M2 TECHNICAL DATA Analog CMOS Integrated Circuits CMOS System Reset IC Built-in Delay time circuit Monolithic IC KIC77A/B/C/D*T/T2/M/M2 Series KIC77A~D*T/M This IC is a system reset IC built in delay time circuit.
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KIC77A/B/C/D/E16
50T/T2/M/M2
KIC77A/B/C/D*
KIC77A
KIC77
240/50/100/200/400ms
t2F sot 23
marking m2
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DR-B 2003
Abstract: drb 2003 PS73633 package MARKING T46 TPS73615-EP TPS73630-EP TPS73618-EP TPS73632-EP TPS73625-EP
Text: TPS736xx www.ti.com SBVS038T – SEPTEMBER 2003 – REVISED AUGUST 2010 Cap-Free, NMOS, 400mA Low-Dropout Regulator with Reverse Current Protection FEATURES 1 • 2 • • • • • • • • • • Stable with No Output Capacitor or Any Value or Type of Capacitor
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TPS736xx
SBVS038T
400mA
30mVRMS
100kHz)
DR-B 2003
drb 2003
PS73633
package MARKING T46
TPS73615-EP
TPS73630-EP
TPS73618-EP
TPS73632-EP
TPS73625-EP
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BF908 Application Note
Abstract: BF998 bf1109 dual-gate philips rf mosfets RGG20 mosfets fl philips TRANSISTOR mosfet 9V BF909R JBT SWITCH
Text: Philips Semiconductors Application of Philips Dual-gate MOSFETs Philips Semiconductors B.V. Report nr. Author Date Department : RNR-T45-97-F-805 : T.H. Uittenbogaard : 7 -Oct.-1997 : P.G. Transistors & Diodes, Development APPLICATION OF PHILIPS DUAL-GATE MOSFETS
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RNR-T45-97-F-805
12Vtypes
BF998,
BF908
BF1100,
OT143)
BF998R,
BF908R
BF1100R,
OT143R)
BF908 Application Note
BF998
bf1109
dual-gate
philips rf mosfets
RGG20
mosfets fl philips
TRANSISTOR mosfet 9V
BF909R
JBT SWITCH
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Untitled
Abstract: No abstract text available
Text: • bbS3T31 Q 0 2 S W T45 W A P X N AMER PHILIPS/DISCRETE PZT2907 PZT2907A b?E D SILICON PLANAR EPITAXIAL TRANSISTORS PNP medium power transistors in a microminiature SM D envelope SOT-223 . Designed prim arily fo r high-speed switching and driver applications.
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bbS3T31
PZT2907
PZT2907A
OT-223)
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES Low Voltage SOT-23 Temperature Sensors ADT45/ADÏ50 FEATURES Low Voltage O peration 2.7 V to 12 V Calibrated D irectly in °C 10 m V/°C Scale Factor ±2°C Accuracy Over Tem perature (typ) ±0.5°C Linearity (typ) Stable w ith Large Capacitive Loads
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OT-23
ADT45/AD
ADT45
ADT50
OT-23
OT-23)
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ECG2501
Abstract: ECG2513 ECG2506 ecg2504 ECG2414 ECG2415 ECG2416 ECG2417 ECG2418 ECG2419
Text: Transistors cont'd ECG Type Description and Application (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts bvcbo b v c eo Baseto Emitter Volts b v EBO Max. Collector Current Iq Amps Max. Device Diss. Pn
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ECG2415
ECG2414)
OT-23
T20-4
ECG2416
ECG2417)
ECG2417
ECG2416)
ECG2501
ECG2513
ECG2506
ecg2504
ECG2414
ECG2418
ECG2419
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Untitled
Abstract: No abstract text available
Text: FZT955 FZT956 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 2 - OCTOBER 1995_ FEATURES * 4 Amps continuous current (10 Amps peak current) * Very low saturation voltages * Excellent gain characteristics specified up to 3 Amps
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FZT955
FZT956
OT223
FZT955
FZT855
FZT956
-100mA,
50MHz
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BFP91A
Abstract: BFP91A NPN PHILIPS BFQ23C SOT173
Text: PhilipsSemiconductors^^ gg bbSBTBl DQ31477 00^ M APX Product specification NPN 6 GHz wideband transistor BFP91A N AUER PHILIPS/DISCRETE DESCRIPTION bRE PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT173X microstripline envelopes. It features
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bbS3T31
BFP91A
OT173
OT173X
BFQ23C.
OT173.
BFP91A
BFP91A NPN PHILIPS
BFQ23C
SOT173
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lc 945 p transistor NPN
Abstract: BFR96S
Text: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device
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hhS3R31
D031A15
BFR96S
BFQ32S.
BFR96S/02
lc 945 p transistor NPN
BFR96S
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors BC 807 BC 808 • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 817, BC 818 NPN Type Marking Ordering Code PinCionfigur ation
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Q62702-C1735
62702-C1689
Q62702-C1721
Q62702-C1736
Q62702-CÃ
Q62702-C1692
OT-23
BC807
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ECG2349
Abstract: ECG245 ECG260 ECG253 ECG274 ECG249 ECG265
Text: PHILIPS E C fi INC SME D • Darlington Power Transistors Description NPN PNP Collector To Base Volts BVC b o Emitter To Base Volts BVEB0 Collector To Emitter Volts b v Ceo Max. Collector Current Iq Amps bbSB'ìefl üüü71b3 TbS « E C G Maximum Ratings at Tc =25°C
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ECG243
ECG245
ECG247
ECG249
ECG251
ECG2349
ECG97
ECG99
ECG98
ECG244
ECG260
ECG253
ECG274
ECG265
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NDS0605
Abstract: No abstract text available
Text: National Semiconductor' April 19 95 NDS0605 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel e nhancem ent m o d e p o w e r field effect tra n sisto rs are produced using N ational's pro p rie ta ry, high cell density, DMOS technology.
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NDS0605
bSD1130
NDS0605
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BUV98
Abstract: BUV98A BUV98AV BUV98V sot227a
Text: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.
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ABUV98
BUV98A
BUV98IV)
OT227B
BUV98V
BUV98
BUV98AV
sot227a
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transistor ecg246
Abstract: ECG251 ECG2317 ECG252 ECG246 ecg 126 transistor ECG260 ecg253 ECG245 ECG247
Text: PH IL IP S E C G INC SME D • Darlington Power Transistors Description NPN PIMP Collector To Base Volts BVc b O Emitter To Base Volts BVEBO Collector To Emitter Volts b v Ceo Max. Collector Current 1C Amps bb SB ^ f l GO OT l b B TbS m Z C G Maximum Ratings at T c =25°C
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bbS312fl
ECG243
ECG244
ECG245
ECG246
ECG247
ECG248
ECG249
ECG250
ECG251
transistor ecg246
ECG2317
ECG252
ecg 126 transistor
ECG260
ecg253
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transistor ECG 152
Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ECG 152
Bt 2313
transistor outlines
transistor ecg36
TRANSISTOR ecg 379
ECG157
123AP
transistor ECG 332
Philips ECG 152
ECG 3041
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transistor ecg36
Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Text: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo
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DDD714b
ECG36
ECG36MP*
ECG37)
T48-1
ECG37
ECG37MCP
ECG36)
ECG36
ECG37
transistor ecg36
transistor ECG 152
TRANSISTOR ecg 379
transistor. ECG 123AP
transistor ECG 332
ecg 126 transistor
TRANSISTOR ECG 69
TRANSISTOR Outlines
ecg 123 transistor
transistor pnp ecg 180
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ecg2504
Abstract: ECG2506 ECG2501 ECG2510 Transistor 126m ECG2414 ECG2415 ECG2416 ECG2417 ECG2418
Text: T ran sisto rs cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v CBO Description and Application Collector To Emitter Volts bvceo Baseto Emitter Volts b v EBO Max. Collector Current Iç Amps Max. Device Diss. Pn
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ECG2415
ECG2414)
OT-23
T20-4
ECG2416
ECG2417)
ECG2417
ECG2416)
ecg2504
ECG2506
ECG2501
ECG2510
Transistor 126m
ECG2414
ECG2418
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