T9 TRANSISTOR Search Results

T9 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

T9 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: T9 / R9 Long Range RF Modules Features • FM Narrow Band Crystal Stabilised • Range up to 1,000 Metres • 868MHz / 433MHz Versions • 4 channel versions • 434.075MHz • 433.920MHz • 434.225MHz • 434.525MHz • Miniature SIL Package • Data Rates Up To 57Kbps	Original	868MHz 433MHz 075MHz 920MHz 225MHz 525MHz 57Kbps 13dBm 121dBm	PDF
ARCO 0.1 Z Abstract: transformer 0-12v VRF151FLMP VK200-4B Text: VRF151FL VRF151FLMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151FL is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF151FL VRF151FLMP 175MHz 30MHz, 175MHz, MRF151 com/micnotes/1818 ARCO 0.1 Z transformer 0-12v VRF151FLMP VK200-4B	PDF
transformer 220-12 Abstract: vrf150 VRF150FL Text: VRF150FL VRF150FLMP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation	Original	VRF150FL VRF150FLMP 150MHz VRF150 150MHz, 30MHz, MRF150 com/micnotes/1818 transformer 220-12	PDF
500 watts amplifier schematic diagram Abstract: 100B4R7 700 watts power amplifier circuit diagram Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier	Original	MRF21060 MRF21060S 500 watts amplifier schematic diagram 100B4R7 700 watts power amplifier circuit diagram	PDF
T16 C6 Abstract: 500 watts amplifier schematic diagram Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier	Original	MRF19060 MRF19060S MRF19060 T16 C6 500 watts amplifier schematic diagram	PDF
j340 motorola Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	MRF21090 MRF21090S j340 motorola	PDF
CDR33BX104AKWS Abstract: MRF21060 MRF21060S Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060S MRF21060 CDR33BX104AKWS MRF21060S	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 RF Power Field Effect Transistors MRF21060R3 MRF21060S N–Channel Enhancement–Mode Lateral MOSFETs MRF21060SR3 The RF MOSFET Line Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060R3 MRF21060S MRF21060SR3	PDF
T17 motorola Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF19060 MRF19060S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF19060/D MRF19060 MRF19060S MRF19060/D T17 motorola	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21090/D MRF21090 MRF21090S MRF21090/D	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21090/D MRF21090 MRF21090S	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF19060/D SEMICONDUCTOR TECHNICAL DATA MRF19060 MRF19060R3 MRF19060S MRF19060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF19060/D MRF19060 MRF19060R3 MRF19060S MRF19060SR3	PDF
j340 motorola make Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060S The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060S MRF21060/D	PDF

100B100JCA500X Abstract: 465B MRF21090 MRF21090S Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21090/D MRF21090 MRF21090S MRF21090 100B100JCA500X 465B MRF21090S	PDF
2001RF Abstract: J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060 MRF21060R3 MRF21060SR3 GX03005522 NI-780 Text: MOTOROLA Order this document by MRF21060/D SEMICONDUCTOR TECHNICAL DATA MRF21060 MRF21060R3 MRF21060SR3 The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to	Original	MRF21060/D MRF21060 MRF21060R3 MRF21060SR3 MRF21060 MRF21060R3 2001RF J205 "RF MOSFET" motorola ups schematic CDR33BX104AKWS MRF21060SR3 GX03005522 NI-780	PDF
SMD Transistors w04 Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5 Text: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package	Original	OT143 BFS17W BFS17AW S858TA3 TSDF1205W S503TRW TSDF1220W S504TRW TSDF1250W S505TRW SMD Transistors w04 smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5	PDF
11105 IC Abstract: pMOS transistor Text: February t9^7 PRELIMINARY ro ML4865 High Voltage High Current Boost Regulator GENERAL DESCRIPTION FEATURES The M L4865 is a high voltage, continuous conduction boost regulator designed for DC to D C conversion in multiple cell battery powered systems. Continuous	OCR Scan	ML4865 200kH L4865 ML4865CS-2 ML4865ES-2 11105 IC pMOS transistor	PDF
power factor PIC circuit Abstract: dc constant speed control motor drive circuit pic SIEMENS MOTOR load sensor pic circuit TLE 4207 G equivalent PIC dc motor speed control 5208-6G siemens motor series 9 motor control using PIC Text: 6 Protection Circuits 6.1 General T T9 task of protection circuits is to protect the motor, the PIC itself, and the other components of the circuit, T 'i:j hazards are • overvoltage, • overcurrent • overtemperature, As described above in the section on disturbances,	OCR Scan	5208-6G power factor PIC circuit dc constant speed control motor drive circuit pic SIEMENS MOTOR load sensor pic circuit TLE 4207 G equivalent PIC dc motor speed control 5208-6G siemens motor series 9 motor control using PIC	PDF
I682 Abstract: T-973 accm sot23-5 682 SOT23 Text: T9-73 05; R e v O ; 10/97 A lif lX I A I Sw itched-Capacitor Voltage Doublers G eneral D escription Oscillator control circuitry and four power M O SFET switches are included on-chip. The MAXI 682 operates at 12kHz and the MAX1683 operates at 35kHz. A typi	OCR Scan	T9-73 1682/MAX 682/MAXI 110pA 12kHz MAX1683 35kHLD I682 T-973 accm sot23-5 682 SOT23	PDF
TH3L10Z Abstract: TH3L10 TH3L20 T7K40 2SCI469 2SD574 2sc3427 dica20 T5L20 Tk3Lio Text: ? • SEMICONDUCTOR ARISTO-CRAFT t,b « E IA J No. !o A VOBO VOEO •'(V ) (V) T7T5 2SB983 -6 0 -5 0 -7 T 7S 5 2 S D I3 4 5 60 50 7 T 7S 3 2SC3427 50 30 7 T I0 S 4 2SC3428 60 40 10 450 360 PT hFE (W ) (M S ) to n . 40 70 100 50 85 7<4"j:y > /7 max. t9 tf	OCR Scan	2SB983 2SDI345 2SC3427 2SC3428 T3M36 2SGI466 T3M40 2SOI467 TI0M36 2SCI468 TH3L10Z TH3L10 TH3L20 T7K40 2SCI469 2SD574 dica20 T5L20 Tk3Lio	PDF
NJ01 Abstract: No abstract text available Text: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect	OCR Scan	00D37S1 T-91-01 NJ01	PDF
T17 TRANSISTOR Abstract: sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6 Text: L A 7 3 0 1, 7 3 0 1 M No.2404 SAIÊYO F Monolithic Linear IC VHS VTR P l a y b a c k He a d Am p , Re c/ o r d"Vi n g Am p I Ji' v Functions • 4-channel playback head amp . 2-channel recording amp ♦ PB; 2 head select switches, k mode select switch^/ . KEC: 4 head select switches, 2 mode select switches	OCR Scan	LA730 7301M 6CM61E) vii555Vpp 630kK& 2J40H- T17 TRANSISTOR sanyo 1042 LA7301 LA7301M transistor t20 DIP920 transistor t8 6CM6	PDF
AC27 Abstract: No abstract text available Text: 551 2SC o VHF O ^ _ SILICON NPN EPITAXIAL PLANAR TRANSISTOR Æ f X teffl ffl o o 5s V D y N P N X t : 5 > * i / ? l ; 7 l s - t B h ÿ y 5J Z S > fè VHp Power Ampi ¡ fi er Appi i cat ion s Frequency Multipl ier Appi ¡cations • c l 175UHZ -C P 0 = 13.5W Min. )	OCR Scan	175MHz 260MHz 400MHz 00LLE0T0R A027A 500mA 150mA 250mA 200MHz AC27	PDF

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T9 TRANSISTOR Search Results

T9 TRANSISTOR Result Highlights (5)

T9 TRANSISTOR Datasheets Context Search

Untitled

ARCO 0.1 Z

transformer 220-12

500 watts amplifier schematic diagram

T16 C6

j340 motorola

CDR33BX104AKWS

Untitled

T17 motorola

Untitled

Untitled

Untitled

j340 motorola make

Untitled

100B100JCA500X

2001RF

SMD Transistors w04

11105 IC

power factor PIC circuit

I682

TH3L10Z

NJ01

T17 TRANSISTOR

AC27