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    SEI Stackpole Electronics Inc RMCF0402FT953K

    RES 953K OHM 1% 1/16W 0402
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    DigiKey RMCF0402FT953K Cut Tape 70,994 1
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    SEI Stackpole Electronics Inc RMCF0603FT953K

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    SEI Stackpole Electronics Inc RMCF1206FT953K

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    Diodes Incorporated FZT957TA

    TRANS PNP 300V 1A SOT223-3
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    Richtek Technology Corp RT9524GQW

    IC BATT CHG LI-ION 1CELL 10WDFN
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    T9.5 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T9500 Flambeau BOX PLAS CLEAR 17.25""LX16.750""W Original PDF
    T9501 Amphenol Telaire IP67 HARSH ENVIRONMENT RELATIVE Original PDF
    T9501 Flambeau BOX PLAS CLEAR 17.25""LX16.750""W Original PDF
    T9502 Flambeau BOX PLAS CLEAR 17.25""LX16.750""W Original PDF
    T95181/391G TT Electronics Resistor: Thick Film: 180/390: 2%: TERM: 9SIP Original PDF
    T95181/391J TT Electronics Resistor: Thick Film: 180/390: 5%: TERM: 9SIP Original PDF
    T95221/271G TT Electronics Resistor: Thick Film: 220/270: 2%: TERM: 9SIP Original PDF
    T95221/271J TT Electronics Resistor: Thick Film: 220/270: 5%: TERM: 9SIP Original PDF
    T95221/331G TT Electronics Resistor: Thick Film: 220/330: 2%: TERM: 9SIP Original PDF
    T95-24A-46 Circuit Assembly Connector: Wire to Board Connector: M: 95: 2.54: THRU Original PDF
    T95302/622J TT Electronics Resistor: Thick Film: 3K/6.2K: 5%: TERM: 9SIP Original PDF
    T95331/391G TT Electronics Resistor: Thick Film: 330/390: 2%: TERM: 9SIP Original PDF
    T95A685K016CSBL Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 6.8UF 16V 10% 1507 Original PDF
    T95B156K016CSAL Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    T95B156K016CSAS Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    T95B156K016CSBL Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    T95B156K016CSSL Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    T95B156K016CSSS Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    T95B156K016CZAL Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    T95B156K016CZAS Vishay Sprague Tantalum Capacitors, Capacitors, CAP TANT 15UF 16V 10% 1611 Original PDF
    ...

    T9.5 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    H 1061

    Abstract: SST29EE010 SST29VE010 SST29EE010-90-4C-NH
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 S71061-11-000 H 1061 SST29VE010 SST29EE010-90-4C-NH PDF

    Untitled

    Abstract: No abstract text available
    Text: W632GU6KB 16M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		W632GU6KB PDF

    Untitled

    Abstract: No abstract text available
    Text: W631GU6KB 8M  8 BANKS  16 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		W631GU6KB PDF

    W631GG6KB-12

    Abstract: W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I
    Text: W631GG6KB 8M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		W631GG6KB W631GG6KB-12 W631GG6KB-15 W631GG6KB15A DDR3 DIMM SPD JEDEC 24si 9x13 W631GG6KB15K w631gg6k W631GG6KB12I W631GG6KB-15I PDF

    AVQ100B-48S05

    Abstract: AVQ100B-48S3V3 AVQ100 AVQ100B-48s0 AGQ100-48S1V5 AVQ-10 AGQ100
    Text: AGQ100&AVQ100B Series DC/DC Converter TRN AGQ100&AVQ100B Series DC/DC Converter Technical Reference Notes Industry Standard Quarter Brick: 36~75V Input, 1.2V~5V Single Output Features • • Industry Standard Quarter Brick : 2.28”X 1.45’’ X 0.38’’ open frame or


    Original     		AGQ100 AVQ100B 6-75V AGQ100-48S1V2 AGQ100-48S1V5 AGQ100-48S1V8 AVQ100B-48S05 AVQ100B-48S3V3 AVQ100 AVQ100B-48s0 AVQ-10 PDF

    W631GU8KB15K

    Abstract: No abstract text available
    Text: W631GU8KB 16M  8 BANKS  8 BIT DDR3L SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		W631GU8KB W631GU8KB15K PDF

    W632GG6KB

    Abstract: W632GG6KB15I
    Text: W632GG6KB 16M  8 BANKS  16 BIT DDR3 SDRAM Table of Contents1. GENERAL DESCRIPTION . 5 2. FEATURES . 5


    Original     		W632GG6KB W632GG6KB15I PDF

    SST29EE010

    Abstract: SST29EE010-70-4C-PHE transistor 1061 SST29VE010
    Text: 1 Mbit 128K x8 Page-Write EEPROM SST29EE010 / SST29VE010 SST29EE / VE0101Mb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE010 – 2.7-3.6V for SST29VE010 • Superior Reliability


    Original     		SST29EE010 SST29VE010 SST29EE VE0101Mb SST29EE010 S71061 SST29EE010" SST29VE010" SST29EE010-70-4C-PHE transistor 1061 SST29VE010 PDF

    hynix ddr3

    Abstract: ddr3 2133 DDR3-2133 DDR3-1333 DDR3-1866 780max
    Text: DDR3 Device Operation DDR3 SDRAM Device Operation 1 DDR3 Device Operation Contents 1. Functional Description 1.1 Simplified State Diagram 1.2 Basic Functionality 1.3 RESET and Initialization Procedure 1.3.1 Power-up Initialization Sequence 1.3.2 Reset Initialization with Stable Power


    Original     		PDF

    RTL8192

    Abstract: RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308
    Text: Point LABEL-LOGO BEZEL-ODD KNOB-ODD LENS-ODD HDD Componet BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A Object description LABEL-LOGO_SAMSUNG;NP,SEC,ARTPAPER+OPP COATING,-,-,-,-,W


    Original     		BA68-10150B BA81-06661A BA81-06662A BA81-06663A BA59-02348A BA43-00207A BA69-40003A BA44-00242A BA81-07036A BA42-00235A RTL8192 RTL819 abc c789 100uf 10p MEC1308-NU BA59-02570A tps51620 w192 BA41-01100A rtl-8192 mec1308 PDF

    sot23 w32

    Abstract: SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g
    Text: Main System Design location Level Parts Code Parts Description Spec.


    Original     		WLL3141 BA44-00238A BA44-00243A BA44-00162A BA42-00133A BA59-02154A BA92-04714A BA99-07566A BA70-00388A BA39-00431A sot23 w32 SOT23 DMB BA39-00628A TESA4982 HED55XXU12 BA41-00725A SMD Code 12W SOT-23 A3212ELH/HED55XXU12 LF80537NE0301MN w342 9g PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Specifications Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG)


    Original     		EDJ1108BABG EDJ1116BABG EDJ1108BABG) EDJ1116BABG) 78-ball 96-ball 1600Mbps/1333Mbps/1066Mbps/800Mbps PDF

    EDJ4208BASE-DJ-F

    Abstract: EDJ4208BASE EDJ4208BASE-GN-F 1024M ELPIDA DDR3 User
    Text: DATA SHEET 4G bits DDR3 SDRAM EDJ4204BASE 1024M words x 4 bits EDJ4208BASE (512M words × 8 bits) Specifications Features • Density: 4G bits • Organization  128M words × 4 bits × 8 banks (EDJ4204BASE)  64M words × 8 bits × 8 banks (EDJ4208BASE)


    Original     		EDJ4204BASE 1024M EDJ4208BASE EDJ4204BASE) EDJ4208BASE) 78-ball 1600Mbps/1333Mbps/1066Mbps M01E1007 EDJ4208BASE-DJ-F EDJ4208BASE EDJ4208BASE-GN-F ELPIDA DDR3 User PDF

    T9342

    Abstract: T9508
    Text: SEPTEMBER 8, 1995 TEST REPORT #95444F CURRENT CARRYING CAPACITY PART NUMBER: TSW/SSW SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. 1 Contech Research This is to certify that the evaluation described herein was


    Original     		95444F 10012-l T9342 T9508 PDF

    EDJ4208EASE-DJ

    Abstract: EDJ4208EASE-DJ-F 1024M DDR3 4G SPD DDR3L-1066F DDR3L-1333
    Text: DATA SHEET 4G bits DDR3L SDRAM EDJ4204EASE 1024M words x 4 bits EDJ4208EASE (512M words × 8 bits) Specifications Features • Density: 4G bits • Organization  128M words × 4 bits × 8 banks (EDJ4204EASE)  64M words × 8 bits × 8 banks (EDJ4208EASE)


    Original     		EDJ4204EASE 1024M EDJ4208EASE EDJ4204EASE) EDJ4208EASE) 78-ball 1333Mbps/1066Mbps M01E1007 EDJ4208EASE-DJ EDJ4208EASE-DJ-F DDR3 4G SPD DDR3L-1066F DDR3L-1333 PDF

    EDJ4216BASE

    Abstract: E1646E41 105WR
    Text: DATA SHEET 4G bits DDR3 SDRAM EDJ4216BASE 256M words x 16 bits Specifications Features • Density: 4G bits • Organization: 32M words × 16 bits × 8 banks • Package: 96-ball FBGA ⎯ Lead-free (RoHS compliant) and Halogen-free • Power supply: VDD, VDDQ = 1.5V ± 0.075V


    Original     		EDJ4216BASE 96-ball 1600Mbps/1333Mbps/1066Mbps M01E1007 E1646E41 EDJ4216BASE E1646E41 105WR PDF

    EDJ2104EDBG

    Abstract: ELPIDA DDR3 DDR3L-1066 edj2108EDBG E1797E41 EDJ2108EDBG-DJ-F EDJ2108EDBG-GN-F
    Text: DATA SHEET 2G bits DDR3L SDRAM EDJ2104EDBG 512M words x 4 bits EDJ2108EDBG (256M words × 8 bits) Specifications Features • Density: 2G bits • Organization  64M words × 4 bits × 8 banks (EDJ2104EDBG)  32M words × 8 bits × 8 banks (EDJ2108EDBG)


    Original     		EDJ2104EDBG EDJ2108EDBG EDJ2104EDBG) EDJ2108EDBG) 78-ball 1600Mbps/1333Mbps/1066Mbps M01E1007 E1797E41 EDJ2104EDBG ELPIDA DDR3 DDR3L-1066 edj2108EDBG E1797E41 EDJ2108EDBG-DJ-F EDJ2108EDBG-GN-F PDF

    J1108

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Specifications Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG)


    Original     		EDJ1108BABG EDJ1116BABG EDJ1108BABG) EDJ1116BABG) 78-ball 96-ball 1600Mbps/1333Mbps/1066Mbps/800Mbps J1108 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR3 SDRAM L EO EDJ5304BASE 128M words x 4 bits EDJ5308BASE (64M words × 8 bits) EDJ5316BASE (32M words × 16 bits) Features • Density: 512M bits • Organization ⎯ 16M words × 4 bits × 8 banks (EDJ5304BASE) ⎯ 8M words × 8 bits × 8 banks (EDJ5308BASE)


    Original     		EDJ5304BASE EDJ5308BASE EDJ5316BASE M01E0706 PDF

    E1629E20

    Abstract: EDJ1108BFBG-DJ-F
    Text: PRELIMINARY DATA SHEET 1G bits DDR3 SDRAM EDJ1104BFBG 256M words x 4 bits EDJ1108BFBG (128M words × 8 bits) Specifications Features • Density: 1G bits • Organization ⎯ 32M words × 4 bits × 8 banks (EDJ1104BFBG) ⎯ 16M words × 8 bits × 8 banks (EDJ1108BFBG)


    Original     		EDJ1104BFBG EDJ1108BFBG EDJ1104BFBG) EDJ1108BFBG) 78-ball 1600Mbps/1333Mbps/1066Mbps M01E0706 E1629E20 E1629E20 EDJ1108BFBG-DJ-F PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 512M bits DDR3 SDRAM EDJ5308BBBG 64M words x 8 bits EDJ5316BBBG (32M words × 16 bits) Specifications Features • Density: 512M bits • Organization  8M words × 8 bits × 8 banks (EDJ5308BBBG)  4M words × 16 bits × 8 banks (EDJ5316BBBG)


    Original     		EDJ5308BBBG EDJ5316BBBG EDJ5308BBBG) EDJ5316BBBG) 78-ball 96-ball 1333Mbps/1066Mbps PDF

    EDJ8216B5MB

    Abstract: E1824E
    Text: PRELIMINARY DATA SHEET 8G bits DDR3L SDRAM, DDP EDJ8216E5MB 512M words x 16 bits Specifications Features • Density: 8G bits • Organization  64M words × 16 bits × 8 banks • Package  96-ball FBGA  DDP: 2 pieces of 4G bits chip sealed in one


    Original     		EDJ8216E5MB 96-ball 1600Mbps/1333Mbps M01E1007 E1826E20 EDJ8216B5MB E1824E PDF

    A1A4M

    Abstract: ELPIDA DDR3 User
    Text: DATA SHEET 1G bits DDR3 SDRAM EDJ1108BABG 128M words x 8 bits EDJ1116BABG (64M words × 16 bits) Features • Density: 1G bits Organization  16M words × 8 bits × 8 banks (EDJ1108BABG)  8M words × 16 bits × 8 banks (EDJ1116BABG) • Package  78-ball FBGA (EDJ1108BABG)


    Original     		EDJ1108BABG EDJ1116BABG EDJ1108BABG) EDJ1116BABG) 78-ball 96-ball 1600Mbps/1333Mbps/1066Mbps/800Mbps A1A4M ELPIDA DDR3 User PDF

    K3L10

    Abstract: No abstract text available
    Text: M 3D E 271 F5 Î H O tm A S fll R R 3 7 3 IS S E M I C O N D U C T O R IH kZCD4020BMS,CD4024BMS CD4040BMS HA R R I S S E M I C O N D SE C T O R 5 0 E D Decem ber 1992 CMOS Ripple-Carry Binary Counter/Dividers 'T - 4 6 - Z S - n Pinouts Features CD4020BMS TOP VIEW


    OCR Scan     		CD4020BMS CD4024BMS CD4040BMS 100nA CD4020BMS CD4020BMS. CD4040BMS CD4024BMSH K3L10 PDF