IDT72V223
Abstract: IDT72V233 IDT72V243 IDT72V253 IDT72V263 IDT72V273 IDT72V283 IDT72V293 72V273
Text: PRELIMINARY 3.3 VOLT HIGH-DENSITY SUPERSYNC II NARROW BUS FIFO IDT72V223, IDT72V233 IDT72V243, IDT72V253 IDT72V263, IDT72V273 IDT72V283, IDT72V293 512 x 18/1,024 x 9, 1,024 x 18/2,048 x 9 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9 8,192 x 18/16,384 x 9, 16,384 x 18/32,768 x 9
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IDT72V223,
IDT72V233
IDT72V243,
IDT72V253
IDT72V263,
IDT72V273
IDT72V283,
IDT72V293
IDT72V223
IDT72V223
IDT72V233
IDT72V243
IDT72V253
IDT72V263
IDT72V273
IDT72V283
IDT72V293
72V273
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TAA 293
Abstract: No abstract text available
Text: SMART SM5360830U4Q6UU Modular Technologies July 14, 1997 32MByte 8M x 36 DRAM Module - 4Mx16 based 72-pin SIMM with Level Translators Features Part Numbers • • • • • • • • • • SM5360830F4Q6UU SM5360830E4Q6UU Configuration : Parity
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SM5360830U4Q6UU
32MByte
4Mx16
72-pin
SM5360830F4Q6UU
SM5360830E4Q6UU
50/60/70ns
400mil
AMP-7-382486-2
AMP-822019-4
TAA 293
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DSP56000
Abstract: DSP56300 DSP56301 DSP56302 DSP56303 DSP56303PV80 102AAA 5782.00 DSP56000 APR
Text: MOTOROLA Order by APR 26/D Motorola Order Number Rev. 0 , 4/05/99 Semiconductor Application Note by Phil Brewer 1 Introduction This application note describes how to interface Flash memory to Motorola’s DSP56300 family of digital signal processors (DSPs). This document is a supplement to the
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DSP56300
24-Bit
Office141
DSP56000
DSP56301
DSP56302
DSP56303
DSP56303PV80
102AAA
5782.00
DSP56000 APR
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KM641003J-15
Abstract: KM641003J-20
Text: CMOS SRAM KM641003 256K x 4 Bit With OE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) : 40 mA(max.) (CMOS): 10 mA(max.) Operating KM641003J-15 : 170 mA(max.) KM 641003J-17: 160 mA(max.)
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KM641003
KM641003J-15
KM641003J-17
KM641003J-20:
KM641003J
32-SOJ-4CK)
KM641003
576-bit
KM641003J-15
KM641003J-20
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Untitled
Abstract: No abstract text available
Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma ble ROM fabricated using silicon gate CMOS process
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KM23C8100AFP2
KM23C8100AFP2
150ns
KM23C8100AFP2)
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44C160
Abstract: No abstract text available
Text: KM44C16004A, KM44C16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data Out M ode CM O S DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. ,
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KM44C16004A,
KM44C16104A
16Mx4
44C160
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MC421000A32BA70
Abstract: MC-421000A32FA-80
Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-421000A32BA, 421000A32FA 1 M-WORD BY 32-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description The MC-421000A32BA, 421000A32FA are 1,048,576 words by 32 bits dynam ic RAM module on which 2 pieces of 16 M DRAWI: /¿PD4218160 are assembled.
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MC-421000A32BA,
421000A32FA
32-BIT
421000A32FA
uPD4218160
b427S2S
M72B-50A46
MC421000A32BA70
MC-421000A32FA-80
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Untitled
Abstract: No abstract text available
Text: HYUNDAI HYM540A400 M-Series 4M x 40-blt CMOS DRAM MODULE PREUMINARY DESCRIPTION The HYM540A400 is a 4M x 40-blt Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ or TSOP-II on a 72 pin glass-epoxy printed circuit board. 0.22^ F decoupling capacitor Is mounted for
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HYM540A400
40-blt
HY5116400
HYM540A400M/LM/TM/LTM
HYM540A400MG/LMG/TMG/LTMG
HYM540400M/MG
HYM540400TM/TMG
1CE08-01-FEB94
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Untitled
Abstract: No abstract text available
Text: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe
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MB81CWOOA-70L/-80L/-10L
MB81C1000A
26-lead
MB81C1000A-70L
MB81C1000A-80L
MB81C1000A-10L
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Untitled
Abstract: No abstract text available
Text: KM64B261A BiCMOS SRAM 65,536 WORD x 4 Bit High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 6, 7, 8 ns max. • Low Power Dissipation Standby (TTL) : 90mA (max.) (CM O S): 20mA (max.) • Operating Current : 160mA (f = 100 MHz.)
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KM64B261A
160mA
28-SOJ-3QO
KM64B261A
144-bit
200mV
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Untitled
Abstract: No abstract text available
Text: PRRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-424000LAB72F 3.3 V OPERATION 4 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description T h e M C-424000LAB72F is a 4,194,304 w ords by 72 bits dynam ic RAM module on w hich 18 pieces of 16 M
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MC-424000LAB72F
72-BIT
C-424000LAB72F
/1PD4217400L
MC-424000LAB72-A60.
M168S-60A3
ti427SES
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Untitled
Abstract: No abstract text available
Text: HYUNDAI H Y 5 1 1 7 1 0 0 SEMICONDUCTOR Series 16Mx 1-bit CM OS DRAM DESCRIPTION The HY5117100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating
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HY5117100
1AD04-10-APR93
HY5117100JC
HY5117100UC
HY5117100TC
HY5117100LTC
HY5117100RC
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Untitled
Abstract: No abstract text available
Text: M H4M 09A 0J-6,-7,-8/ MH4M09A0JA-6,-7,-8 FAST PAGE MODE 37748736-BIT 4194304-WORD BY 9-BIT DYNAMIC RAM DESCRIPTION The M H 4M Û 9A 0J/JA is 4194304 word x 9 bit dynamic RAM and consists of nine industry standard 4M x 1 dynamic RAMs in SOJ. The mounting of SOJ on a single in-line package provides
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MH4M09A0JA-6
37748736-BIT
4194304-WORD
09A0JA-
748736-BIT
MH4M09A0J-6
-8/MH4M09A0JA-6
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TSOP 86 Package
Abstract: msm5116165b
Text: O K I Semiconductor MSM5116 16 5 B_ E 2 G 0 0 5 3 - 1 7 -4 1 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION TheMSM5116165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The MSM5116165B achieves high integration, high-speed operation, and low-power
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MSM5116165B
576-Word
16-Bit
TheMSM5116165B
MSM5116165B
42-pin
50/44-pin
TSOP 86 Package
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KM6161002J-15
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b7E D • 7^4142 DDlTb^fi 21G PRELIMINARY KM6161002 SMGK CMOS SRAM 65,536 WORD x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 17, 20ns Max. • Low Power Dissipation Standby
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KM6161002
KM6161002J-15:
230mA
KM6161002J-17:
220mA
KM6161002J-20:
210mA
KM6161002J:
44-Pin
KM6161002
KM6161002J-15
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSC23CV132SL-xxBS8 1,048,576-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23CV132SL-xxBS8 is a fully decoded 1,048,576-word x 32-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 1M x 4 in TSOP packages
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MSC23CV132SL-xxBS8
576-Word
32-Bit
MSC23CV132SL-xxBS8
72-pin
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Untitled
Abstract: No abstract text available
Text: KM44C268C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM44C268C
KM44C268C
110ns
KM44C268C-7
130ns
KM44C268C-8
150ns
KM44C268C-6
20-LEAD
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514900AJ-7
Abstract: No abstract text available
Text: HM514900A/AL Series Preliminary 524,288-word x 9-bit Dynam ic Random Access Memory T h e H ita c h i H M 5 1 4 9 0 0 A are C M O S d y n a m ic RAM o rg a n iz e d as f i 2 4 , 2 8 8 - w o rd O rd erin g Inform ation x 9 - b it . Type No. Access time HM 514900AJ-7
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HM514900A/AL
288-word
514900AJ-7
514900AJ-8
28-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 4 1 9 A J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 2 6 2 1 4 4 -word by 18-bit dynamic RAMS, fabricated with the high performance CMOS process, and is
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4718592-BIT
262144-WORD
18-BIT
M5M44190AJ
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M5M44400
Abstract: No abstract text available
Text: V -T .V B T .'-'- 'S 's {O'TAV V O D V V ' MU FAST PAGE MODE DYNAMIC RAM 2M x 36 M BIT Max. Access Type name time Load memory Outward dimensions Data sheet W x H x D mm) page 107.95 x 25.4 x 8.6 3 /1 4 1 0 7 .9 5 x 3 1 .9 7 x 3 .9 4 /1 4 (ns) MH2M36BDJ-7
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MH2M36BDJ-7
MH2M36BNDJ-7
MH2M36BDJ-8
MH2M36BNDJ-8
MH2M36BTJ-7
MH2M36BNTJ-7
MH2M36BTJ-8
MH2M36BNTJ-8
M5M44400BTP,
41000BVP,
M5M44400
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Untitled
Abstract: No abstract text available
Text: AS4C256K16E0 5V 256Kx 16 CMOS DRAM EDO Features • Refresh - 5 1 2 refresh cycles, 8 m s refresh interval - RAS-only o r CAS-before-RAS refresh o r self-refresh - Self-refresh o p tio n is available for n e w g en eratio n device • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits
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AS4C256K16E0
256Kx
AS4C256K16E0-25)
S4C256K16E0-30JC
S4C256K16E0-35JC
AS4C256K16E0-50JC
S4C256K16E0-50TC
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D4242
Abstract: IC 741 cn
Text: b 4 E 7 5 2 S DOMEMOS T 2 D B i N E C E MOS INTEGRATED C IR CU IT / ¡P D 4 2 S 1 6 1 7 0 L ,4 2 S 1 7 1 7 0 L ,4 2 S 1 8 1 7 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O D E & BYTE W R ITE M O DE P R E LIM IN A R Y -DESCRIPTIO N The NEC u PD42S16170L, u PD42S17170L and
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uPD42S16170L
uPD42S17170L
uPD42S18170L
b427525
004EbBL>
475mil)
P32VF-100-475A
P32VF-100-475A
D4242
IC 741 cn
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DS3235
Abstract: DS3600 DS3235-1 PNC11 P10C68 P11C68 PNC10C68 PNC11C68
Text: s» 5 Ë GEC PLESSEY MARCH 1993 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3 6 0 0 - 1 .5 P 1 0 C 6 8 /P 1 1 C 6 8 Previously PNC10C68 and PNC11C68 CMOS/SNOS NVSRAM HIGH PERFORMANCE 8 K x 8 NON-VOLATILE STATIC RAM (Supersedes DS3159-1.3, DS3160-1.3, DS3234-1.1, DS3235-1.1)
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ds3600-1
P10C68/P11C68
PNC10C68
PNC11C68)
DS3159-1
DS3160-1
DS3234-1
DS3235-1
P10C68
P11C68
DS3235
DS3600
PNC11
PNC11C68
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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