8002K
Abstract: TACB2J224 TACB2G824 TACB2E226 FTACB631V105 f 630 TACB2K563 3152F
Text: 高周波・大電流用（低圧用） RoHS指令 適合品 （標準品） ◆特 長 ● 弊社独自の円筒構造のため性能が優れております。 ● 通電時の発音が微小です。 （静音対応） ● 体積比で従来の TAC に比べ、平均 50％の小形化達成。
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250Vdc315Vdc400Vdc630Vdc800Vdc
033F22F
1100kHz
2100kHzFig
3100kHz
50Ao-p
8515K1057
12K6K
9095RH
1003O
8002K
TACB2J224
TACB2G824
TACB2E226
FTACB631V105
f 630
TACB2K563
3152F
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Untitled
Abstract: No abstract text available
Text: Nov 2006 HYB18M512160BF-6 HYE18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF-7.5 DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant Data S heet Rev.1.80 HY[B/E]18M512160BF 512-Mbit DDR Mobile-RAM HYB18M512160BF-6; HYE18M512160BF-6 HYE18M512160BF-7.5
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HYB18M512160BF-6
HYE18M512160BF-6
HYB18M512160BF-7
HYE18M512160BF-7
512-Mbit
18M512160BF
HYB18M512160BF-6;
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tl 0741
Abstract: No abstract text available
Text: GM71C4800A/AL GM71CS4800A/AL LG S em icon Co.,Ltd. 524,288 W ORDS x 8 BIT CMOS DYNAM IC RAM Description Features The G M 71C4800A/AL is the new generation dynamic RAM organized 524,288 x 8 bit. GM71C4800A/AL has realized higher density, higher performance and various functions by utilizing
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GM71C4800A/AL
GM71CS4800A/AL
71C4800A/AL
GM71CS4800A/AL
tl 0741
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TAC 2J 105
Abstract: TAC 2J 3A1250V
Text: FILM CAPACITORS FOR USE IN HIGH FREQUENCY AND HIGH VOLTAGE EQUIPMENT • Standaid Ratings W x H x T mm (M e ta lliz e d P o ly p ro p y le n e F ilm C a p a c ito r s ) T A C -S E R IE S \ (H ig h F req u e n cy U se, R esin D ip p e d T ype) • Specifications
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33juF)
000hrs.
TAC 2J 105
TAC 2J
3A1250V
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TM4SN64EPN10
Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •
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TM2SN64EPN
64-BIT
TM4SN64EPN
SMMS696
TM2SN64EPN.
TM4SN64EPN
66-MHz
168-Pin
TM4SN64EPN10
TM2SN64EPN-10
TM48N64EPN
TM4SN64EPN-10
TMS626812
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active suspension
Abstract: 3tr5 ujt transistor MSM56V16800E MSM56V16800E-10 MSM56V16800E-8 transistor mark BA
Text: E2G1053-18-54 O K I Sem iconductor MSM56V16800E Thisversion:,ul 1998 2-Bank x 1,048,576-Word x 8-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Oki’s CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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E2G1053-18-54
MSM56V16800E
576-Word
MSM56V16800E
cycles/64
active suspension
3tr5
ujt transistor
MSM56V16800E-10
MSM56V16800E-8
transistor mark BA
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LS7261/LS7262
Abstract: No abstract text available
Text: _ LSI COMPUTER SYSTEMS 54E D LSI/CSI sis- 53D4b0b Q00CH32 blO LSC T 'S X - /J’-02s- LS7260/LS7261 LS7262 Manufacturers of Custom and Standard L S I Circuits 1235 Walt Whitman Road, Melville, N Y 11747-3086 • Tel.: 516 271-0400 • Fax: (516) 271-0405
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53D4b0b
Q00CH32
LS7260/LS7261
LS7262
LS7260)
LS7261/LS7262)
LS7260/61/62
LS726Q/61/62
S304b0b
LS7261
LS7261/LS7262
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M27256-2F1
Abstract: M27256 30F1 M27256F1 27256-2 m27256 sgs 27256 eprom M27256-3F1 M27256-4F1 Z8000
Text: o z> 0 ù > 0 / o SVI2 7 2 5 6 — QQ2Q42- S 6 r S> 256K 32K x 8 c ASABLE PROM FAST ACCESS TIME: 200ns 250ns 300ns 450ns MAX MAX MAX MAX M27256-2F1 M27256F1/M27256F6/M27256-25F1 ' M27256-3F1/M27256-30F1 M27256-4F1/M27256-4F6/M27256-45F1 0 to 70°C STANDARD TEMPERATURE RANGE
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M27256
200ns
M27256-2F1
250ns
M27256F1/M27256F6/M27256-25F1
300ns
M27256-3F1/M27256-30F1
450ns
M27256-4F1/M27256-4F6/M27256-45F1
M27256
M27256-2F1
30F1
M27256F1
27256-2
m27256 sgs
27256 eprom
M27256-3F1
M27256-4F1
Z8000
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D56V62160
Abstract: BA RX transistor d56v621 3tr5
Text: O K I Semiconductor MD56V62160/H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM D E SCRIPTIO N T he M D 5 6 V 6 2 1 6 0 /H is a 4 -b a n k x 1,048,576-w ord x 16-bit sy n c h ro n o u s d y n a m ic R A M , fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
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MP56V62160/H_
576-Word
16-Bit
MD56V62160/H
cycles/64
D56V62160
BA RX transistor
d56v621
3tr5
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FOR5J
Abstract: GTO thyristor 100A, 400V TO-220AH TSZ25G 5F13 TSS1G41 s6565g GTO thyristor 5A, 400V MSG100L41 TSS2G41S
Text: [ Thyristors P h a s e Control T h yristo rs : * i'eak off state v<>!t,tK<‘ and tewrse voilage Average "n-state current 50V 0. IA 0.3A 0.5A IA 2A S F 0 K ÎA 4 2 3A 100V SF0 R 1 H 4 2 SF0 R 3 H 4 2 SFOH5H43 SM H12 S F2 B 4 1 SF3 H 1 4 SF3H41 SF3 H 4 2 SF5 H 1 3
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SFOH5H43
SF3H41
SF5H41
1000A
I500A
SF1500C
SF1500J27
SF500H27
SF600H27
SF500D27
FOR5J
GTO thyristor 100A, 400V
TO-220AH
TSZ25G
5F13
TSS1G41
s6565g
GTO thyristor 5A, 400V
MSG100L41
TSS2G41S
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736T
Abstract: No abstract text available
Text: HYM72V32C736T8 , 32Mx72, 32Mx8 based PC133 DESCRIPTION T he H Y M 72V 32 C 736T 8 S e ries are 32M x72bits EC C S ynchro nous DR AM M odules. T he m odules are com posed o f nine 32M x8bits CM O S S ynchronous D R AM s in 400 m il 54pin TS O P -II package, one 2K bit E E PR O M in 8pin TS S O P package on a 168pin glass-e poxy
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HYM72V32C736T8
32Mx72,
32Mx8
PC133
x72bits
54pin
168pin
0022uF
736T
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Untitled
Abstract: No abstract text available
Text: irrte1* M51C256H HIGH PERFORMANCE RIPPLEMODETm 256K x 1 CHMOS DYNAMIC RAM M ilita ry M51C256H-15 M51C256H-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 High Reliability Ceramic— 16 Pin DIP Ripplem ode Operation — Continuous Data Rate over 12 MHz
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M51C256H
M51C256H-15
M51C256H-20
M51C256H
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor E2G1052-17-X1 M D 5 6 V 6 2 1 6 0 /H 4-Bank x 1,048,576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The M D 56V 62160/H is a 4-bank x 1,048,576-w ord x 16-bit synchronous dynam ic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs
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E2G1052-17-X1
576-Word
16-Bit
62160/H
576-w
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs O ’d ' MH16S72VJB-6 r 1,207,959,552-BIT 16,777,216-WORD BY 72-BIT Synchronous DYNAMIC RAM ^ -PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION The MH16S72VJB is 16777216 - word x 72-bit Synchronous
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MH16S72VJB-6
552-BIT
216-WORD
72-BIT
MH16S72VJB
72-bit
85pin
94pin
10pin
95pin
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Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64FFC-10,10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64FFC is 8388608 - word by 64-bit Synchronous DRAM module. This consists of four
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MH8S64FFC-10
536870912-BIT
64-BIT
MH8S64FFC
64-bit
144-pin
MIT-DS-0281
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH16S72BDFA-7, -8 1,207,959,552-BIT 16,777,216-W O RD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are su bject to change w ith o u t notice. DESCRIPTION The MH16S72BDFA is 16777216 - word x 72-bit Synchronous DRAM module. This consist of eighteen
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MH16S72BDFA-7,
552-BIT
72-BIT
MH16S72BDFA
16S72BD
100MHz
MIT-DS-0329-0
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH32S72QJA-7, -8 2415919104-BIT 33554432-W O RD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are su bject to change w ith o u t notice. DESCRIPTION The MH32S72QJA is 33554432 - word x 72-bit S ynch ron ous DRAM module. This consist of eighteen
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MH32S72QJA-7,
2415919104-BIT
3554432-W
72-BIT
MH32S72QJA
32S72Q
100MHz
100MHz
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68681
Abstract: No abstract text available
Text: Signetics 68681 Dual Asynchronous Receiver/Transmitter DUART Product Specification Military Microprocessor Products DESCRIPTION The S ignetics 68681 D ual U niversal A syn ch ro n o us R eceiverH Vansm itter (D U AR T) is a sing le -ch ip M O S -LS I co m
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814400
Abstract: marking CEZ MAS 10 RCD mb814400 MB814400-10 MB814400-12 MB814400-80 ZIP-20P-M02 marking Z1p
Text: Novem ber 1991 Edition3.0 :• , .-y,-.:. FUJITSU . DATASHEET M B 8 1 4400-80/-10/-12 CMOS 1 M X 4 B I T FAST PAGE MODE DRAM CM O S 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu MB814400 is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304
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MB814400-80/-1o/-12
MB814400
MB614400
024-bits
814400
marking CEZ
MAS 10 RCD
MB814400-10
MB814400-12
MB814400-80
ZIP-20P-M02
marking Z1p
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Untitled
Abstract: No abstract text available
Text: I = =• = IBM13N8644HCC IBM13N8734HCC P relim inary 8M x 64/72 O n e-B an k U nbuffered S D R A M M odule Features • 168-Pin Unbuffered 8-Byte Dual In-Line Memory Module • 8Mx64/72 Synchronous DRAM DIMM • Three speed sorts: • -260 and -360 for PC100 applications
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168-Pin
8Mx64/72
PC100
66MHz
IBM13N8644HCC
IBM13N8734HCC
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JASO d 605-74
Abstract: JIS D 5500 JIS C-3406 LT 7220 JASO 7002 JASO d605 tensile strength crimping pull test AMP connector Mark VII
Text: AMP Product Specification 108-5165 19 OCT 99 « ¿ w s » Rev. B1 Multi-Interlock Mark II Connector for wire to board termination v —£11 MIC C o n ten ts First 16 pages following this top sheet English version Next 17 pages Japanese version When only one of above versions is supplied to customers, this top sheet shall be
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FJOO-1742-99
J-002-1
D605-74
MIL-STD-20
JASO d 605-74
JIS D 5500
JIS C-3406
LT 7220
JASO 7002
JASO d605
tensile strength crimping pull test
AMP connector Mark VII
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Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH4S64BKG -7,-8,-10 268435456-BIT 4194304 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH4S64BKG is 4194304 - word by 64-bit Synchronous DRAM module. This consists of four
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MH4S64BKG
268435456-BIT
64-BIT
64-bit
144-pinnts
MIT-DS-0245-0
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Untitled
Abstract: No abstract text available
Text: Preliminary Speo. M it s u b is h i lsis Some contents are subject to change w ithout notice. MH8S64AKD -8,-10,-8L,-10L 536870912-BIT 8388608 - WORD BY 64-BIT SynchronousDRAM DESCRIPTION The MH8S64AKD is 8388608 - word by 64-bit Synchronous DRAM module. This consists of eight
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MH8S64AKD
536870912-BIT
64-BIT
64-bit
MIT-DS-0131-1
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HD63803
Abstract: 63b03 AS3922 W9600 63a03 HD63B03XP HD6303RP mc 1513 HD63B03YP HD63A03RP
Text: HD6303R,HD63A03R,-HD63B03R CMOS MPU Micro Processing Unit The H D 6303R is an 8-bit CMOS m icro processing u n it which has th e com pletely com patible instruction set w ith th e HD6301V 1, 128 bytes RAM, Serial C om m unication Interface (SCI), parallel I/O po rts and m ulti function tim er are incorpora
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HD6303R
HD63A03R
HD63B03R
HD6301V1.
HD6303R.
HMCS6800
HD63803
63b03
AS3922
W9600
63a03
HD63B03XP
HD6303RP
mc 1513
HD63B03YP
HD63A03RP
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