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    TANAKA WIRE 1.4 Search Results

    TANAKA WIRE 1.4 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-5XRJ11PPXS-014 Amphenol Cables on Demand Amphenol MP-5XRJ11PPXS-014 Flat Silver Satin Modular Crossed wiring Cable, RJ11 / RJ11 14ft Datasheet
    MP-64RJ4528GB-003 Amphenol Cables on Demand Amphenol MP-64RJ4528GB-003 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Blue 3ft Datasheet
    MP-64RJ4528GG-014 Amphenol Cables on Demand Amphenol MP-64RJ4528GG-014 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Green 14ft Datasheet
    MP-64RJ4528GR-007 Amphenol Cables on Demand Amphenol MP-64RJ4528GR-007 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Red 7ft Datasheet
    MP-64RJ4528GY-003 Amphenol Cables on Demand Amphenol MP-64RJ4528GY-003 Slim Category-6 (Thin CAT6) UTP 28-AWG Network Patch Cable (550-MHz) with Snagless RJ45 Connectors - Yellow 3ft Datasheet

    TANAKA WIRE 1.4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    0118-B

    Abstract: 0118b tanaka gold wire 1.0 mil ts333 tanaka TS3332LD tanaka CSW0118-BD DM6030HK TS3332LD DM6030HK-Pt
    Text: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V


    Original     		CSW0118-BD 22-Jan-07 CSW0118-BD 0118-B 0118b tanaka gold wire 1.0 mil ts333 tanaka TS3332LD tanaka DM6030HK TS3332LD DM6030HK-Pt PDF

    0118-B

    Abstract: 0118B tanaka gold wire 1.0 mil CSW0118-BD DM6030HK TS3332LD tanaka epoxy
    Text: 0.5-18 GHz GaAs pHEMT MMIC SPDT Switch CSW0118-BD January 2007 - Rev 22-Jan-07 Features Chip Diagram Broadband Coverage: 0.5 to 18.0 GHz Insertion Loss: 1.8 dB Typ. @ 10 GHz Isolation: 35 dB P1dB: +20 dBm, Typical Current Consumption: 50 µA, Typ. with Control Voltage of -7.0V, 0.0V


    Original     		CSW0118-BD 22-Jan-07 CSW0118-BD 0118-B 0118B tanaka gold wire 1.0 mil DM6030HK TS3332LD tanaka epoxy PDF

    ts333

    Abstract: tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt
    Text: 2.0-16.0 GHz GaAs MMIC Frequency Divider April 2007 - Rev 17-Apr-07 E1000-BD Features Divide-by-Four +5.0 dBm Output Power -30 dBc Fundamental Leakage Single-ended or Differential Input & Output 100% On-Wafer, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Apr-07 E1000-BD MIL-STD-883 XE1000-BD XE1000-BD-000V XE1000-BD-EV1 XE1000 ts333 tanaka gold wire current tanaka gold wire DM6030HK 8SDV0500 TS3332LD XE1000-BD XE1000-BD-000V XE1000-BD-EV1 DM6030HK-Pt PDF

    DM6030HK

    Abstract: CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy
    Text: 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Chip Diagram Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz


    Original     		13-Oct-06 CMM0016 076mm CMM0016-BDis CMM0016-BD DM6030HK CMM0016 CMM0016-BD TS3332LD tanaka gold wire tanaka epoxy PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0-20.0 GHz GaAs MMIC 1W Power Amplifier October 2006 - Rev 13-Oct-06 CMM0016 Features Chip Diagram Small Size: 2.32x1.30x0.076mm Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable - Fully Matched Unconditionally Stable P1dB: 29 dBm, Typ. @ 18 GHz


    Original     		13-Oct-06 CMM0016 076mm CMM0016-BDis CMM0016-BD PDF

    P1014

    Abstract: DM6030HK TS3332LD XP1006 XP1014 XP1014-BD-000V XP1006 bonding
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD August 2007 - Rev 03-Aug-07 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1014-BD 03-Aug-07 XP1006 MIL-STD-883 XP1014 I0005129 XP1014-BD-000V XP1014-BD-EV1 XP1014 P1014 DM6030HK TS3332LD XP1014-BD-000V XP1006 bonding PDF

    xp1014

    Abstract: P1014-BD
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier s 18 P1014-BD November 2008 - Rev 14-Nov-08 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit 100% On-Wafer RF, DC and Output Power Testing


    Original     		14-Nov-08 P1014-BD XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000V XP1014-BD-EV1 PDF

    p1014

    Abstract: No abstract text available
    Text: 8.5-11.0 GHz GaAs MMIC Power Amplifier Velocium Products 18 - 20 GHz HPA - APH478 P1014 November 2006 - Rev 01-Nov-06 Features XP1006 Driver Amplifier 18.0 dB Small Signal Gain +31.0 dBm Saturated Output Power 35% Power Added Efficiency On-chip Gate Bias Circuit


    Original     		01-Nov-06 APH478 P1014 XP1014 I0005129 XP1006 MIL-STD-883 XP1014-BD-000W XP1014-BD-000V XP1014-BD-EV1 PDF

    M1004-BD

    Abstract: 26BAM0545 DM6030HK TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
    Text: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


    Original     		26-Feb-07 M1004-BD MIL-STD-883 XM1004-BD XM1004-BD-000V XM1004-BD-EV1 XM1004-BD M1004-BD 26BAM0545 DM6030HK TS3332LD XM1004-BD-000V XM1004-BD-EV1 PDF

    180 Degree hybrid

    Abstract: 180 Degree broadband hybrid 26BAM0545 DM6030HK M1004-BD TS3332LD XM1004-BD XM1004-BD-000V XM1004-BD-EV1
    Text: 20.0-38.0 GHz GaAs MMIC Balanced Mixer February 2007 - Rev 26-Feb-07 M1004-BD Features Fundamental Balanced Mixer 8.0 dB Conversion Loss +25.0 dBm Input Third Order Intercept IIP3 35.0 dB LO to RF Isolation 100% On-Wafer RF Testing 100% Visual Inspection to MIL-STD-883


    Original     		26-Feb-07 M1004-BD MIL-STD-883 XM1004-BD XM1004-BD-000V XM1004-BD-EV1 XM1004-BD 180 Degree hybrid 180 Degree broadband hybrid 26BAM0545 DM6030HK M1004-BD TS3332LD XM1004-BD-000V XM1004-BD-EV1 PDF

    PB-CMM1100-BD-0000

    Abstract: tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD CMM1100-BD-000V DM6030HK TS3332LD
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD September 2008 - Rev 28-Sep-08 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Commercial-Level Visual Inspection Using Mil-Std-883 Method 2010


    Original     		CMM1100-BD 28-Sep-08 Mil-Std-883 metallizaD-000V PB-CMM1100-BD-0000 CMM1100-BD PB-CMM1100-BD-0000 tanaka epoxy tanaka TS3332LD epoxy transistor BD 140 CMM1100-BD-000V DM6030HK TS3332LD PDF

    L1004-BD

    Abstract: DM6030HK TS3332LD XL1004 XL1004-BD-000V XL1004-BD-000W XL1004-BD-EV1
    Text: 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier L1004-BD April 2007 - Rev 21-Apr-07 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 17.0 dB Small Signal Gain 1.8 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		L1004-BD 21-Apr-07 MIL-STD-883 XL1004-BD-000V XL1004-BD-000W XL1004-BD-EV1 XL1004 L1004-BD DM6030HK TS3332LD XL1004-BD-000V XL1004-BD-000W XL1004-BD-EV1 PDF

    L1004-BD

    Abstract: DM6030HK TS3332LD XL1004 XL1004-BD-000V XL1004-BD-000W XL1004-BD-EV1 ts333
    Text: 35.0-45.0 GHz GaAs MMIC Low Noise Amplifier L1004-BD April 2007 - Rev 21-Apr-07 Features Chip Device Layout Balanced Design Excellent Input/Output Match Self-biased Architecture 17.0 dB Small Signal Gain 1.8 dB Noise Figure 100% On-Wafer RF, DC and Noise Figure Testing


    Original     		L1004-BD 21-Apr-07 MIL-STD-883 XL1004-BD-000V XL1004-BD-000W XL1004-BD-EV1 XL1004 L1004-BD DM6030HK TS3332LD XL1004-BD-000V XL1004-BD-000W XL1004-BD-EV1 ts333 PDF

    PB-CMM1100-BD-0000

    Abstract: TS3332LD CMM1100-BD CMM1100-BD-000V DM6030HK
    Text: 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier CMM1100-BD April 2007 - Rev 30-Apr-07 Features Self Bias Architecture 16.0 dB Small Signal Gain 3.8 dB Noise Figure +15.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 Chip Device Layout


    Original     		CMM1100-BD 30-Apr-07 MIL-STD-883 CMM1100-BD-000V PB-CMM1100-BD-0000 CMM1100-BD PB-CMM1100-BD-0000 TS3332LD CMM1100-BD-000V DM6030HK PDF

    tanaka gold wire 1.0 mil

    Abstract: m430 f CMM0015-BD-000V tanaka gold wire M430 tanaka epoxy tanaka gold wire data sheet tanaka wire 1.4 VIREO usb mp3 module circuit diagram CMM0015-BD
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0015-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 11.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point +38.0 dBm Third Order Intercept


    Original     		CMM0015-BD 26-Apr-07 MIL-STD-883 CMM0015-BD-000V PB-CMM0015-BD-0000 CMM0015-BD tanaka gold wire 1.0 mil m430 f CMM0015-BD-000V tanaka gold wire M430 tanaka epoxy tanaka gold wire data sheet tanaka wire 1.4 VIREO usb mp3 module circuit diagram PDF

    BD 149 transistor

    Abstract: tanaka gold wire 1.0 mil piconics Resistor CMM0014-BD tanaka epoxy transistor BD 140 CMM0014-BD-000V DM6030HK M380 TS3332LD
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0014-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture 11.5 dB Small Signal Gain +24.0 dBm P1dB Compression Point +35.0 dBm Third Order Intercept


    Original     		CMM0014-BD 26-Apr-07 MIL-STD-883 CMM0014-BD-000V PB-CMM0014-BD-0000 CMM0014-BD BD 149 transistor tanaka gold wire 1.0 mil piconics Resistor tanaka epoxy transistor BD 140 CMM0014-BD-000V DM6030HK M380 TS3332LD PDF

    m430 f

    Abstract: m430 VD100 tanaka gold wire 1.0 mil VIREO usb mp3 module circuit diagram CMM0015-BD CMM0015-BD-000V DM6030HK PB-CMM0015-BD-0000 TS3332LD
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0015-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 11.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point +38.0 dBm Third Order Intercept


    Original     		CMM0015-BD 26-Apr-07 MIL-STD-883 CMM0015-BD-000V PB-CMM0015-BD-0000 CMM0015-BD m430 f m430 VD100 tanaka gold wire 1.0 mil VIREO usb mp3 module circuit diagram CMM0015-BD-000V DM6030HK PB-CMM0015-BD-0000 TS3332LD PDF

    tanaka TS3332LD epoxy

    Abstract: tanaka gold wire tanaka gold wire data sheet tanaka wire tanaka epoxy tanaka TS3332LD tanaka wire 1.4 CMM0016-BD CMM0016-BD-000V DM6030HK
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD March 2008 - Rev 04-Mar-08 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept


    Original     		CMM0016-BD 04-Mar-08 MIL-STD-883 providM0016-BD-0000 CMM0016-BD tanaka TS3332LD epoxy tanaka gold wire tanaka gold wire data sheet tanaka wire tanaka epoxy tanaka TS3332LD tanaka wire 1.4 CMM0016-BD-000V DM6030HK PDF

    CMM0016-BD

    Abstract: CMM0016 CMM0016-BD-000V DM6030HK PB-CMM0016-BD-0000 TS3332LD
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD March 2008 - Rev 04-Mar-08 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept


    Original     		CMM0016-BD 04-Mar-08 MIL-STD-883 andM0016-BD-0000 CMM0016-BD CMM0016 CMM0016-BD-000V DM6030HK PB-CMM0016-BD-0000 TS3332LD PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept


    Original     		26-Apr-07 CMM0016-BD MIL-STD-883 CMM0016-BD-000V PB-CMM0016-BD-0000 PDF

    OC 74 germanium transistor

    Abstract: P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD XP1020-BD-000V power transistor gaas
    Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier P1020-BD January 2007 - Rev 30-Jan-07 Features Compact, Low Cost Design 20.0 dB Small Signal Gain +27.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010


    Original     		P1020-BD 30-Jan-07 MIL-STD-883 XP1020-BD XP1020-BD-000V XP1020-BD-EV1 XP1020-BD OC 74 germanium transistor P1020 15MPA0566 DM6030HK TS3332LD XP1020-BD-000V power transistor gaas PDF

    44MPA0478

    Abstract: DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD
    Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1028-BD April 2007 - Rev 17-Apr-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 14.0 dB Small Signal Gain +29 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		P1028-BD 17-Apr-07 MIL-STD-883 XP1028-BD-000V XP1028-BD-EV1 XP1028 44MPA0478 DM6030HK TS3332LD XP1028-BD XP1028-BD-000V XP1028-BD-EV1 P1028-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 24.0-34.0 GHz GaAs MMIC Power Amplifier 28MPA0304 May 2005 - Rev 05-May-05 Features Chip Device Layout tio n Excellent Saturated Output Stage 16.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		05-May-05 28MPA0304 MIL-STD-883 PDF

    Untitled

    Abstract: No abstract text available
    Text: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2007 - Rev 03-May-07 D1002 Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing


    Original     		03-May-07 D1002 MIL-STD-883 PDF