Thermal Resistance vs. Mounting Pad Area
Abstract: TB377
Text: Thermal Resistance vs. Mounting Pad Area Technical Brief October 1999 TB377 Author: J. Wojslawowicz T JM – T A P DM = -Z θJA 300 RθJA = 103.2 - 24.3 250 Rθβ, RθJA (oC/W) The maximum rated junction temperature, TJM, and the
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TB377
006in2
027in2
Thermal Resistance vs. Mounting Pad Area
TB377
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AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113DK8
AN9321
AN9322
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
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n13 sot 23
Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113T3ST
OT-223
330mm
100mm
EIA-481
n13 sot 23
44E10
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
TB334
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smps 5kw
Abstract: controller for PWM with IGBT ICL7660 pspice model 48V SMPS computer SMPS Circuit full bridge mosfet smps 5kw smps full bridge S.M.P.S dc-ac inverter Controller PWM igbt power 5kw pspice high frequency mosfet
Text: 891.1 WC-001 Power Topology 5/16/00 12:45 PM Page 2 POWER SUPPLY TOPOLOGIES Buck Step Down TYPE OF CONVERTER Boost (Step Up) Buck - Boost (Step Down/Up) SEPIC (Step Down/Up) CUK (Step Up/Down) Forward Flyback Push-Pull Two-Switch Forward Half Bridge Full Bridge
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WC-001
AN9889
AN9890
TB377
HIP6301
HIP6601
IPEC/2000
smps 5kw
controller for PWM with IGBT
ICL7660 pspice model
48V SMPS
computer SMPS Circuit
full bridge mosfet smps
5kw smps full bridge S.M.P.S
dc-ac inverter Controller PWM
igbt power 5kw
pspice high frequency mosfet
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76105dk8
Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
76105dk8
AN9321
AN9322
HUF76105DK8
HUF76105DK8T
MS-012AA
TB334
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76113
Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113T3ST
76113
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
HUF76105DK8
HUF76105DK8T136
HUF76105DK8T
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Untitled
Abstract: No abstract text available
Text: HUFA75309T3ST TM Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUFA75309T3ST
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309T
Abstract: TL 4941 Pspice AN9321 HUFA75309T3ST TB334
Text: HUFA75309T3ST Data Sheet Title UFA 309T T bject A, V, 70 m, annel raFE November 2000 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUFA75309T3ST
309T
TL 4941
Pspice
AN9321
HUFA75309T3ST
TB334
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Untitled
Abstract: No abstract text available
Text: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76131SK8
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Untitled
Abstract: No abstract text available
Text: HUF75309T3ST Data Sheet June 1999 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF75309T3ST
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Untitled
Abstract: No abstract text available
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,
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HUF76105DK8
6105D
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TA7611
Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
Text: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113T3ST
TA7611
TB334
AN7254
AN7260
AN9321
AN9322
HUF76113T3ST
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Untitled
Abstract: No abstract text available
Text: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76131SK8
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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AN9321
Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76113DK8
AN9321
AN9322
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
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76105DK8
Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
76105DK8
AN9321
AN9322
HUF76105DK8
HUF76105DK8T
MS-012AA
TB334
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76105DK8
Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Text: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76105DK8
Fil15mm)
MS-012AA
330mm
EIA-481
76105DK8
AN9321
HUF76105DK8
HUF76105DK8T
MS-012AA
TB334
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intersil 76131SK8
Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76131SK8
mana15mm)
MS-012AA
330mm
EIA-481
intersil 76131SK8
AN9321
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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AN7254
Abstract: AN9321 AN9322 HUF75309T3ST TB334
Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF75309T3ST
AN7254
AN9321
AN9322
HUF75309T3ST
TB334
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AN9321
Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
Text: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced
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HUF76113DK8
powe15mm)
MS-012AA
330mm
EIA-481
AN9321
HUF76113DK8
HUF76113DK8T
MS-012AA
TB334
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TA7613
Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Text: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76131SK8
TA7613
AN9321
AN9322
HUF76131SK8
HUF76131SK8T
MS-012AA
TB334
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Untitled
Abstract: No abstract text available
Text: HUF75309T3ST in t e r r ii Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET a 4377.3 Features • 3A, 55V T h is N -C hannel pow e r M O S F E T is m File N um ber • U ltra Low O n-Ftesistance, rc s jO N = 0 .0 7 0 0 m anu facture d using the innovative
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HUF75309T3ST
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