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    KOA Speer Electronics Inc RK73B1HTTC620J

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    KOA Speer Electronics Inc RK73H1HTTC6203F

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    KOA Speer Electronics Inc RK73H1HTTC6202F

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    SEI Stackpole Electronics Inc RNMF14FTC620K

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    Microchip Technology Inc TC620CVOA713

    THERMOSTAT PROG ACT HIGH 8SOIC
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    Newark TC620CVOA713 Reel 3,300
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    Mouser Electronics TC620CVOA713 3,239
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    Microchip Technology Inc TC620CVOA713 Reel 3,300 6 Weeks
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    Avnet Silica TC620CVOA713 7 Weeks 3,300
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    TC 620 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC620 Microchip Technology 5V, Dual Trip Point Temperature Sensors Original PDF
    TC620 Microchip Technology Logic Output Temperature Sensor Family Original PDF
    TC620 TelCom Semiconductor 5V, DUAL TRIP POINT TEMPERATURE SENSORS Original PDF
    TC6208 Tamarack Microelectronics 8 PORT 10/100 UNMANAGED ETHERNET SWITCH WITH FLOW-CONTROL, PRIORITY, TRUNKING Original PDF
    TC620CCOA Microchip Technology Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC Original PDF
    TC620CCOA Microchip Technology 5V, Dual Trip Point Temperature Sensor Original PDF
    TC620CCOA TelCom Semiconductor 5V, DUAL TRIP POINT TEMPERATURE SENSORS Original PDF
    TC620CCOA713 Microchip Technology Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC Original PDF
    TC620CCOA713 Microchip Technology 5V, Dual Trip Point Temperature Sensor Original PDF
    TC620CCOA713G Microchip Technology IC TEMP SENSOR ANALOG 8 pin SOIC N Original PDF
    TC620CCOAG Microchip Technology TEMP SWITCH, INT SENSOR, C OPT., 0C to +70C, 8-SOIC 150mil, TUBE Original PDF
    TC620CCPA Microchip Technology Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-DIP Original PDF
    TC620CCPA Microchip Technology 5 V, Dual Trip Point Temperature Sensor Original PDF
    TC620CCPA TelCom Semiconductor 5V, DUAL TRIP POINT TEMPERATURE SENSORS Original PDF
    TC620CCPAG Microchip Technology IC TEMP SENSOR ANALOG 8 pin PDIP Original PDF
    TC620CCVOA Microchip Technology 5V, dual trip point temperature sensors, high true control output Original PDF
    TC620CEOA Microchip Technology Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC Original PDF
    TC620CEOA Microchip Technology 5V, Dual Trip Point Temperature Sensor Original PDF
    TC620CEOA TelCom Semiconductor 5V, DUAL TRIP POINT TEMPERATURE SENSORS Original PDF
    TC620CEOA713 Microchip Technology Temperature Sensors, Transducers, Sensors, Transducers, IC TEMP SNSR 5V DUAL TRIP 8-SOIC Original PDF

    TC 620 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    R075

    Abstract: R056 R68 resistor kf 202 transistor YAGEO TYPE CR KT 210 R30-R33 470R 680R kc series vitrohm resistors
    Text: Series KC, KH, KV, KT, KF Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 1W 200 R056 - R20 R22 - 300R 330R - 9K1 2W 202 R075 - R43 R47 - 620R 680R - 20K 4W 206 R056 - R20


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    YAGEO TYPE CR

    Abstract: Yageo 680R Vitrohm resistors R-62
    Text: Series KP Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 2W 290 R10 - R27 R30 - 510R 560R - 7K5 4W 292 R15 - R56 R62 - 620R 680R - 11K 5W 294 R27 - R62 R68 - 1K1 1K2 - 20K


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    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


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    SEMiX452GB126HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


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    SEMiX452GAL126HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAR126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 455 A Tc = 80°C 319 A 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 394 A Tc = 80°C 272 A ICRM = 2xICnom VGES SEMiX 2s Trench IGBT Modules


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    SEMiX452GAR126HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX604GB12Vs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 880 A Tc = 80 °C 670 A 600 A ICnom ICRM SEMiX 4s ICRM = 3xICnom 1800 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 707 A Tc = 80 °C 529


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    SEMiX604GB12Vs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 587 A Tc = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 441 A Tc = 70 °C 342 A 400 A 800


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    SKiM606GD066HD PDF

    Untitled

    Abstract: No abstract text available
    Text: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Tc = 25 °C 587 A Tc = 70 °C 467 A 600 A ICnom ICRM ICRM = 2xICnom 1200 A -20 . 20 V 6 µs -40 . 175 °C Tc = 25 °C 441 A Tc = 70 °C 342 A 400 A 800


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    SKiM606GD066HD PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC ICRM Tj = 150°C 1200 V Tc = 25°C 590 A Tc = 80°C 413 A 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25°C 533 A Tc = 80°C 367 A ICRM = 2xICnom VGES SEMiX 4s Trench IGBT Modules


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    SEMiX604GB126HDs PDF

    SID200S12

    Abstract: TF 620 M
    Text: SID200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode


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    SID200S12 125oC 800A/us SID200S12 TF 620 M PDF

    SII200S12

    Abstract: IGBT 150A
    Text: SII200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode


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    SII200S12 125oC 800A/us SII200S12 IGBT 150A PDF

    SDI200S12

    Abstract: No abstract text available
    Text: SDI200S12 SPT IGBT Modules Dimensions in mm 1mm = 0.0394" TC = 25oC, unless otherwise specified Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min Visol Inverse Diode


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    SDI200S12 125oC 800A/us SDI200S12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    SEMiX604GB126HDs E63532 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    SEMiX452GAL126HDs E63iX452GAL126HDs PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules ICRM = 2xICnom 800 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    SEMiX604GB126HDs E63532 PDF

    discharge diode

    Abstract: No abstract text available
    Text: SEMiX452GAL126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    SEMiX452GAL126HDs E63532 discharge diode PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s tpsc Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    SEMiX452GB126HDs E6353SEMiX452GB126HDs PDF

    C319A

    Abstract: SEMIX452GB126HDS
    Text: SEMiX452GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 150 °C 1200 V Tc = 25 °C 455 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMiX 2s Trench IGBT Modules ICRM = 2xICnom 600 A -20 . 20 V 10 µs -40 . 150 °C Tc = 25 °C


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    SEMiX452GB126HDs E63532 C319A SEMIX452GB126HDS PDF

    SKM900GA12E4

    Abstract: No abstract text available
    Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1311 A Tc = 80 °C 1007 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    SKM900GA12E4 SKM900GA12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKM900GA12E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 1305 A Tc = 80 °C 1003 A 900 A ICnom ICRM SEMITRANS 4 IGBT4 Modules ICRM = 3xICnom 2700 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C


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    SKM900GA12E4 PDF

    Untitled

    Abstract: No abstract text available
    Text: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules NOMP NOOP= NDOP QJOPM R SB I G1&321.1 K&0.% +- 5- '2).-.* -7%(&'2-)H N ZUU VAUU VBUU VSUU N WUU VCUU VTUU V@UU QJIN R TU I G*2)> VWUX J5 R WB YEH M[[J TC¥UW? M[[J TC]UW? M[[$ TC¥UW?


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    24N10

    Abstract: No abstract text available
    Text: AdvancedTechnical Information IXFK24N100 IXFX 24N100 V DSS ^D25 R Single MOSFET Die ft> Symbol Test Conditions v Td = 25°Cto 150°C Tj =25°C to150°C ;R GS=1 Mi2 V V ±20 i3 0 V V ' ar Tc =25°C Tc =25°C, N otel Tc =25°C 24 96 24 A A A Tc =25°C Tc =25°C


    OCR Scan
    IXFK24N100 24N100 to150 24N10 PDF

    Untitled

    Abstract: No abstract text available
    Text: nixYS Advanced Technical Information IXFX 90N30 IXFK 90N30 HiPerFET Power MOSFETs VDSS Single MOSFET Die Maximum Ratings TestConditions V Td = 25°C to 150°C Td = 25°C to 150°C; RGS = 1 M£i 300 300 V V Continuous Transient ±20 ±30 V V Tc Tc Tc Tc


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    90N30 PLUS247â PDF

    ixgk32n60

    Abstract: No abstract text available
    Text: ÎXYS HiPerFAST IGBT IXGH 32N60A 1XGH 32N60AS CES ^C25 v CE sat t,i Symbol Test Conditions v CES T j = 25°C to 150°C v CGR T j = 25°C to 150°C; RGE = 1 M il 600 V Continuous ±20 V V* GEM Transient ±30 V ^C25 Tc = 25°C 60 A Tc = 90°C 32 A ^CM Tc = 25“C, 1 ms


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    32N60A 32N60AS T0-247 32N60AS) O-247 B2-65 ixgk32n60 PDF