d1308
Abstract: d1297 D12971E 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor designed in millimeter 3.0 ±0.3 for high speed switching applications.
|
Original
|
2SK2411,
2SK2411-Z
2SK2411
d1308
d1297
D12971E
2SK2411-Z
C10535E
C11531E
MP-25
MP-25Z
|
PDF
|
2SJ357
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
d1308
Abstract: D1297 2SK2411 2SK2411-Z C10535E C11531E MP-25 MP-25Z
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SJ358
Abstract: MEI-1202
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SK2413
Abstract: IEI-1213 MEI-1202 MF-1134 TC-2494
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SK2412
Abstract: IEI-1213 MEI-1202 MF-1134 TC-8031
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2412 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2412 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2
|
Original
|
2SK2412
2SK2412
IEI-1209)
IEI-1213
MEI-1202
MF-1134
TC-8031
|
PDF
|
2SJ358
Abstract: MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package Drawings unit: mm The 2SJ358 is a P-channel vertical MOS FET that can be used as a switching element. The 2SJ358 can be 5.7 ±0.1 1.0 3 0.5 ±0.1 0.5 ±0.1 2.1
|
Original
|
2SJ358
2SJ358
MEI-1202
|
PDF
|
2SK2415
Abstract: 2SK2415-Z IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2415 is N-Channel MOS Field Effect Transistor designed + 0.2 1.5 – 0.1 in millimeters for high voltage switching applications.
|
Original
|
2SK2415,
2SK2415-Z
2SK2415
2SK2415-Z
IEI-1213
MEI-1202
MF-1134
|
PDF
|
IEI-1209
Abstract: 2SK2358 2SK2357
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transis- PACKAGE DIMENSIONS in millimeters tor designed for high voltage switching applications.
|
Original
|
2SK2357/2SK2358
2SK2357/2SK2358
2SK2358:
O-220
2SK2357:
IEI-1209)
IEI-1209
2SK2358
2SK2357
|
PDF
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
TC-2419
Abstract: TC-527 TC-447 TC-527HB LB 2 resin compound TC-564-1 Tc 521 A latex TC530
Text: Techform Products E L E C T R O N I C S, I N C. Temporary Solder Masks and Adhesives are now available through Kester's Techform line. The solder masks are applied to printed circuit boards to prevent solder from flowing onto edge connectors, gold fingers, or empty through-holes. The adhesives are designed to form a bond that will maintain
|
Original
|
4662-SM
2331-ZX
TC-2419
TC-527
TC-447
TC-527HB
LB 2
resin compound
TC-564-1
Tc 521 A
latex
TC530
|
PDF
|
Transistor D 2494
Abstract: 2SK2413 IEI-1213 MEI-1202 MF-1134 TC-8032
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2413 is N-Channel MOS Field Effect Transistor de- in millimeter signed for high speed switching applications. FEATURES • Low On-Resistance
|
Original
|
2SK2413
2SK2413
IEI-1209)
Transistor D 2494
IEI-1213
MEI-1202
MF-1134
TC-8032
|
PDF
|
2SK2410
Abstract: IEI-1213 MEI-1202 MF-1134
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2410 is N-Channel MOS Field Effect Transistor de- in millimeters signed for high speed switching applications. 4.5 ±0.2
|
Original
|
2SK2410
2SK2410
IEI-1209)
IEI-1213
MEI-1202
MF-1134
|
PDF
|
d1297
Abstract: d1308 2SK2357 2SK2358 C10535E C11531E
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2357/2SK2358 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2357/2SK2358 is N-Channel MOS Field Effect Transistor in millimeters designed for high voltage switching applications.
|
Original
|
2SK2357/2SK2358
2SK2357/2SK2358
2SK2357/2358)
2SK2358:
O-220
d1297
d1308
2SK2357
2SK2358
C10535E
C11531E
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SK2411
Abstract: 2SK2411-Z IEI-1213 MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2411 is N-Channel MOS Field Effect Transistor de- in millimeter 10.6 MAX. 10.0 • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
|
Original
|
2SK2411,
2SK2411-Z
2SK2411
2SK2411-Z
IEI-1213
MP-25
MP-25Z
|
PDF
|
2SK2412
Abstract: IEI-1213 MEI-1202 MF-1134
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SJ357
Abstract: C11531E
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
2SK2353
Abstract: 2SK2354 IEI-1209
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2353/2SK2354 is N-Channel MOS Field Effect Transis- PACKAGE DIMENSIONS tor designed for high voltage switching applications. in millimeters
|
Original
|
2SK2353/2SK2354
2SK2353/2SK2354
IEI-1209)
2SK2354:
2SK2353
2SK2354
IEI-1209
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2353/2SK2354 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N T he 2SK2353/2SK2354 is N -C hannel M O S Field E ffect T ra n s is PACKAGE DIM EN SIO N S to r d e sig ne d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .
|
OCR Scan
|
2SK2353/2SK2354
2SK2353/2SK2354
2SK2353:
2SK2354:
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ358 P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH Package D raw ings unit: m m T he 2S J358 is a P -channel v e rtic a l M O S FET th a t can be used as a s w itc h in g e le m e n t. The 2S J358 can be d ire c tly d riv e n by an 1C o p e ra tin g at 5 V.
|
OCR Scan
|
2SJ358
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2413 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2413 is N -C hannel M O S F ield E ffect T ra n s is to r d e PACKAGE D IM ENSIONS in m illim eter sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .
|
OCR Scan
|
2SK2413
2SK2413
I-1202
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N PACKAGE DIMENSIONS T he 2SK2410 is N -C hannel M O S F ield E ffect T ra n s is to r d e in m illim e te rs sig n e d fo r h ig h speed s w itc h in g a p p lic a tio n s .
|
OCR Scan
|
2SK2410
2SK2410
|
PDF
|
K2415
Abstract: NEC 2415 NEC JAPAN 2415 K 2415 mp32
Text: DATA SHEET NEC / MOS FIELD EFFECT TRANSISTOR / _ 2SK2415, 2SK2415-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION T h e 2S K 2415 is N -C hannel M O S Field Effect Transistor designed for high PACKAGE DIMENSIONS {in m illim eters v o ltag e sw itching applications.
|
OCR Scan
|
2SK2415,
2SK2415-Z
IEI-12Q9I
2SK2415
K2415
NEC 2415
NEC JAPAN 2415
K 2415
mp32
|
PDF
|
