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    TC55V200 Price and Stock

    Toshiba America Electronic Components TC55V2001STI-10

    IC,SRAM,256KX8,CMOS,TSSOP,32PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55V2001STI-10 1,531
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Toshiba America Electronic Components TC55V2001STI-85L

    256K X 8 STANDARD SRAM, 85 ns, PDSO32
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55V2001STI-85L 999
    • 1 $12.75
    • 10 $12.75
    • 100 $12.75
    • 1000 $4.4625
    • 10000 $4.4625
    		Buy Now

    TC55V200 Datasheets (76)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V2001F-10 Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001F-10L Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001F-85 Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001F-85L Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FI Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FI-10 Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FI-10 Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FI-10L Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FI-10L Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FI-85 Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FI-85 Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FI-85L Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FI-85L Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FRI-10 Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FRI-10L Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FRI-85 Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FRI-85L Toshiba 262,144-Word BY 8-BIT STATIC RAM Scan PDF
    TC55V2001FT-10 Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FT-10L Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF
    TC55V2001FT-85 Toshiba 262,144 Word by 8 Bit Static RAM Scan PDF

    TC55V200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    am29f010b-70ef

    Abstract: A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference
    Text: Cross Reference Memory IC's and More www.amictechnology.com part number AMIC part number µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B A29F002 AM29F002B AM29F002BB-120JF AM29F002BB-55JD AM29F002BB-90EI


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B A29F002 am29f010b-70ef A29010-70F AM29F040B-55JF AM29F040B-90jf Pm25LV512A am29f800bb-70ef S29AL004D55TFI02 AM29F040B-90JI AM29F010B70JF tc55257 cross reference

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    256kx8 sram 5v

    Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
    Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power


    Original     		PDF TC551001C, 128Kx8 TC551001CI, TC554001A-V TC554001AI ismatch/20000921/09112000/TOSH/09112000/1 TC55V200 TC55V2001 TC55V2001I 256kx8 sram 5v toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    CYPRESS SAMSUNG CROSS REFERENCE

    Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
    Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: [email protected] Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V


    Original     		PDF K6Y0808C1D BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62UV2000-15 BS62LV2000-10 BS62LV2000-70 BS62XV256-25 32Kx8 CYPRESS SAMSUNG CROSS REFERENCE TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70

    um61256

    Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
    Text: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD441000L-B PD442000L-B PD442012L-XB PD444012L-B PD4504161 um61256 um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2001 F/FT/TR/ST/SR-85,-10,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001F/FT/TR/ST/SR is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		PDF TC55V2001 F/FT/TR/ST/SR-85 144-WORD TC55V2001F/FT/TR/ST/SR 152-bit 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2001 F/FT/TR/ST/SR-85,-10,-85L,-10L T O S H IB A M O S D IG IT A L IN T E G R A T E D C IRCUIT SILIC O N G ATE C M O S 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001F/FT/TR/ST/SR is a 2,097,152-bit static random access memory SRAM organized as 262,144


    OCR Scan     		PDF 144-WORD TC55V2001 F/FT/TR/ST/SR-85 TC55V2001F/FT/TR/ST/SR 152-bit TC55V2001F/FT/T R/ST/SR-85 32-P-0820-0 32-P-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2001 FI/FTI/TRI/STI/SRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001FI/FTI/TRI/STI/SRI is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device


    OCR Scan     		PDF 144-WORD TC55V2001 FI/FTI/TRI/STI/SRI-85 TC55V2001FI/FTI/TRI/STI/SRI 152-bit 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V200FT/TR-70#-85#-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-W O R D BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V200FT/TR is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by


    OCR Scan     		PDF 16-BIT TC55V200FT/TR-70# TC55V200FT/TR 152-bit 48-P-1214-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2001 F/FT/TR/ST/SR-85,-10,-85L,-1 OL TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001F/FT/TR/ST/SR is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		PDF 144-WORD TC55V2001 F/FT/TR/ST/SR-85 TC55V2001F/FT/TR/ST/SR 152-bit 32-P-0820-0 32-P-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2001 FI/FTI/TRI/STI/SRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001FI/FTI/TRI/STI/SRI is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device


    OCR Scan     		PDF 144-WORD TC55V2001 FI/FTI/TRI/STI/SRI-85 TC55V2001FI/FTI/TRI/STI/SRI 152-bit 32-P-0 TC55V2001FI/FTI/TRI/STI/SRI-85

    TAE 1102

    Abstract: No abstract text available
    Text: TOSHIBA TC55V200FT/rR/UB-70,-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 3 1 ,0 7 2 -W O R D BY 16-BIT FULL C M O S STATIC RAM DESCRIPTIO N The TC55V200FT/TR/UB is a 2,097,152-bit static random access memory SRAM organized as 131,072 words


    OCR Scan     		PDF TC55V200FT/TR/UB-70 072-WORD 16-BIT TC55V200FT/TR/UB 152-bit TC55V20QFT/TR/UB-7Q 48-P-1214-0 TAE 1102

    Static Random Access Memory SRAM

    Abstract: No abstract text available
    Text: T O S H IB A TC55V200FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V200FT/TR is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by


    OCR Scan     		PDF TC55V200FT/TR-85 072-WORD 16-BIT TC55V200FT/TR 152-bit 48-P-1214-0 Static Random Access Memory SRAM

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V200FT/TR-85<-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WC>RD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V200FT/TR is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by


    OCR Scan     		PDF TC55V200FT/TR-85< 072-WC 16-BIT TC55V200FT/TR 152-bit 48-P-1214-0 TC55V200FT/TR-85 TC55V200F77TR-85

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V200FT/TR-85,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55V200FT/TR is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single


    OCR Scan     		PDF TC55V200FT/TR-85 072-WORD 16-BIT TC55V200FT/TR 152-bit 48-P-1214-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2001F/FT/TR/ST/SR-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001F/FT/TR/ST/SR is a 2,097,152-bit static random access memory SRAM organized as 262,144 words by 8 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a


    OCR Scan     		PDF TC55V2001 F/FT/TR/ST/SR-85 144-WORD TC55V2001F/FT/TR/ST/SR 152-bit TC55V2001F/FT/T R/ST/SR-85 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2001 FI/FTI/TRI/STI/SRI-85,-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001FI/FTI/TRI/STI/SRI is a 2,097,152-bit static random access memory SRAM organized as


    OCR Scan     		PDF TC55V2001 FI/FTI/TRI/STI/SRI-85 144-WORD TC55V2001FI/FTI/TRI/STI/SRI 152-bit 32-P-0820-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2001 FI/FTI/TRI/STI/SRI-85,-10,-85L,-10L T O S H IB A M O S D IG ITAL IN TEG RA T ED CIRCUIT SILICON GATE C M O S 262,144-WORD BY 8-BIT STATIC RAM DESCRIPTION The TC55V2001FI/FTI/TRI/STI/SRI is a 2,097,152-bit static random access memory SRAM organized as


    OCR Scan     		PDF TC55V2001 FI/FTI/TRI/STI/SRI-85 144-WORD TC55V2001FI/FTI/TRI/STI/SRI 152-bit 32-P-0820-0