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    TCL 012-124 DC Search Results

    TCL 012-124 DC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd
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    TCL 012-124 DC Price and Stock

    Traco Power TCL-012-124-DC

    DC/DC DIN RAIL SUPPLY 24V 24W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TCL-012-124-DC Box 17 1
    • 1 $96.8
    • 10 $85.078
    • 100 $74.7773
    • 1000 $69.25
    • 10000 $69.25
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    Traco Power TCL 012-124 DC

    Isolated DC/DC Converters - DIN Rail Mount Product Type: DC/DC; Package Style: DIN-rail; Output Power (W): 12; Input Voltage: 9.5-18 VDC; Output 1 (Vdc): 24; Output 2 (Vdc): N/A; Output 3 (Vdc): N/A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TCL 012-124 DC 81
    • 1 $93.71
    • 10 $85.07
    • 100 $74.77
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    Verical TCL 012-124 DC 10 1
    • 1 $122.4261
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    TCL 012-124 DC 3 1
    • 1 $109.144
    • 10 $104.006
    • 100 $96.936
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    Newark TCL 012-124 DC Bulk 23 1
    • 1 $75.99
    • 10 $66.31
    • 100 $63.33
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    RS TCL 012-124 DC Bulk 12 20 Weeks 1
    • 1 $97.77
    • 10 $88.97
    • 100 $81.15
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    TME TCL 012-124 DC 3 1
    • 1 $86.62
    • 10 $82.54
    • 100 $76.93
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    Neutron USA TCL 012-124 DC 50
    • 1 $266.51
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    Traco Power TCL012-124DC

    Isolated DC/DC Converters - DIN Rail Mount
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager TCL012-124DC 50 1
    • 1 $78.23
    • 10 $72.35
    • 100 $68.29
    • 1000 $68.29
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    TCL 012-124 DC Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCL 012-124 DC Traco Power Power Supplies - External/Internal (Off-Board) - DC DC Converters - DC/DC CONVERTER 24V 24W Original PDF

    TCL 012-124 DC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PC2-6400

    Abstract: SODIMM DDR2 Mechanical Dimensions NT1GT64UH8C0FN-3C 9850ft PC2-5300 SSTL-18 NT2GT64U8HC0BN-3C nanya 2Gb 800 sodimm 64mx16 A2149
    Text: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400 PC2-6400 -37B -3C -AD


    Original
    NT1GT64UH8C0FN NT2GT64U8HC0BN PC2-4200 PC2-5300 PC2-6400 DDR2-533/667/800 64Mx16 /128Mx8 PC2-4200 PC2-5300 PC2-6400 SODIMM DDR2 Mechanical Dimensions NT1GT64UH8C0FN-3C 9850ft SSTL-18 NT2GT64U8HC0BN-3C nanya 2Gb 800 sodimm 64mx16 A2149 PDF

    CS 49E 210

    Abstract: No abstract text available
    Text: NT256T64UH4B0FY Preliminary 256MB: 32M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 32Mx16 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module • 32Mx64 DDR2 Unbuffered DIMM based on 32Mx16 DDR2 SDRAM NT5TU32M16BG


    Original
    NT256T64UH4B0FY 256MB: 240pin 32Mx16 240-pin 32Mx64 NT5TU32M16BG) CS 49E 210 PDF

    ACT-D16M96S

    Abstract: BSA1 BS-B1
    Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM


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    ACT-D16M96S 16MegaBit 50-MHz 192-cycle SCD3370 BSA1 BS-B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM


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    ACT-D16M96S 16MegaBit 50-MHz SCD3370 PDF

    SDRAM aeroflex micron die

    Abstract: CKE 2009 4164 dram 524,288-word x 16-bit MT48LC16M16A2 Y16Y BA1182 DQ86 BA872
    Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module www.aeroflex.com/Avionics September 9, 2009 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM


    Original
    ACT-D16M96S 16MegaBit 50-MHz 192-cycle SCD3370 SDRAM aeroflex micron die CKE 2009 4164 dram 524,288-word x 16-bit MT48LC16M16A2 Y16Y BA1182 DQ86 BA872 PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1998 Revision 1.1 data sheet GOB256UV6431 A -(67/84/100/125)Q-S 2MByte (256K x 64) CMOS Synchronous Graphic Module General Description The GOB256UV6431(A)-(67/84/100/125)Q-S is a high performance, 2-megabtye synchronous, graphic RAM module organized as 256K words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.


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    GOB256UV6431 144-pin, MB81G83222- 256Kx32 GOB256UV6431 GOB256UV6431A: PDF

    tsop 66

    Abstract: No abstract text available
    Text: July 1998 Revision 1.1 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512K x 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431(A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized as 512K words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.


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    GOB512UV6431 144-pin, MB81G83222- 256Kx32 GOB512UV6431 GOB512UV6431A tsop 66 PDF

    GM71V18163C

    Abstract: No abstract text available
    Text: GM71V18163C GM71VS18163CL LG S em icoo C o.,Ltd. # 1,048,576 W O R D S x 16 B IT CM OS D Y N A M IC RA M Description The Features G M 71V S 18163C /CL is the new generation dynam ic R A M organized 1,048,576 x 16 bit. G M 71V (S)18163C /CL has realized higher density, higher perform ance and various


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    GM71V18163C GM71VS18163CL 18163C 18163C/CL 42pin PDF

    KKZ 09

    Abstract: kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12
    Text: @ LG Semicon. Co. LTD Description Features The GM71V S 16163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)16163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The


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    GM71V 6163A/AL 42pin 400mil KKZ 09 kkz 12 28 pin kkz 12 27 pin 405A757 kkz 12 PDF

    GM71V18163BT6

    Abstract: GM71V18163BJ7 GM71V18163BT7 GM71V18163BT gm71v18163bj6 irp 540
    Text: @ LG Semicon. Co. LTD. D escription Features The GM71V S 18163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)18163B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


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    18163B/BL GM71V 42pin 400mil GM71V18163BT6 GM71V18163BJ7 GM71V18163BT7 GM71V18163BT gm71v18163bj6 irp 540 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY6416C1EG-80H TENTATIVE TO SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1EG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.


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    THMY6416C1EG-80H 216-WORD 64-BIT THMY6416C1EG TC59S6408FT 64-bit cycles16C1EG) PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD Description Features The GM71V S 18163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)18163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The


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    8163A/AL 42pin 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: 128K x 64 FLOW THRU ZBT SRAM 128K x 64 PIPELINE ZBT SRAM ADVANCE INFORMATION IDT7MB V41 53 IDT7MBV4154 FEATURES: DESCRIPTION: • Low profile 160-lead AMP Free Height Surface Mount Board-to-Board Connectorfam ily 5mm-8mm plug options • High speed - 50 MHz flow thru, 100 MHz pipeline


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    IDT7MBV4154 160-lead IDT7MBV4153/54 V4153 PDF

    BEG-80

    Abstract: No abstract text available
    Text: TOSHIBA TH M Y728071BEG-80.-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-W ORD BY 72-BIT SYNCHRONOUS D RA M MODULE DESCRIPTION The THMY728071BEG is a 8,388,608-word by 72-bit synchronous dynamic RAM module consisting of nine TC59S6408BFT/BFTL DRAMs and an unbuffer on a printed circuit board.


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    THMY728071 BEG-80 608-WORD 72-BIT THMY728071BEG TC59S6408BFT/BFTL 72-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: GMM7658287CNTG-5/6 u 8,388,608WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features * 144 pins Dual In-Line Package - GMM7658287CNTG : Gold plating * Extended Data Out EDO Mode Capability * Single Power Supply * Fast Access Time & Cycle Time ,TT .


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    GMM7658287CNTG-5/6 608WORDS GMM7658287CNTG 16bit 50pin GMM7658287CNTG PDF

    Untitled

    Abstract: No abstract text available
    Text: GM71C18163C GM71CS18163CL S e m i c o n C o . .L td . 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM71C S 18163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM 71C(S) 18163C/CL has realized higher density, higher performance and various


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    GM71C18163C GM71CS18163CL GM71C 18163C/CL 42pin PDF

    Untitled

    Abstract: No abstract text available
    Text: GM71V S 18163C(CL) 1Mx16, 3.3V, 1K Ref, EDO * * * * Pin Configuration 1,048,576 W ords x 16 Bit Organization Extended Data Out M ode Capability Single Pow er Supply (3.3V+/-0.3V) Fast Access Tim e & Cycle Time Vcx-E 3 3 1015 ¡o] 1/014 1/02 (T 3 1/013 1/03 H


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    GM71V 18163C 1Mx16, 18163C/CL 42pin 100us. 100us, Q26lQ PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs ' MH1S72CXJ-10,-12,-15 75,497,472-BIT 1,048,576-WQRD BY 72-BIT Synchronous DYNAMIC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH1S72CXJ is an 1M word by 72-bit Synchronous dynamic RAM module and consists of five industry standard


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    MH1S72CXJ-10 472-BIT 576-WQRD 72-BIT MH1S72CXJ 72-bit 576-WORD PDF

    NEC 4218165-60

    Abstract: PD42S18165-60
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿IPD42S18165, 4218165 16 M-BIT DYNAM IC RAM 1 M-W ORD BY 16-BIT, EDO, BYTE READ/W RITE MODE D e s c rip tio n The luPD42S18165, 4218165 are 1.048.576 words by 56 bits CMOS dynamic RAMs with optional EDO, EDO is a kind of the page mode and is useful for the read operation.


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    uPD42S18165 uPD4218165 16-BIT, luPD42S18165 /rPD42S18165 42S18165. 50-pin 42-pin PP42S18165, IR35-207-3 NEC 4218165-60 PD42S18165-60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMD12N11 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


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    THMD12N11 B70f75f80 216-WORD 64-BIT THMD12N11B TC59WM815BFT 64-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: G M 71V 16163C tf71VS16163CL G M 71V S16163C L i, 048,576 w o r d s x i 6 b i t I jc 'îpmîivm fVi i fii ^ e r r m o n i.- o .y iA e t, ,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description Features The GM 71V S 16163 C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit.


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    16163C tf71VS16163CL S16163C GM71V 16163C/CL 16163C/CL 42pin PDF

    TC59WM815BFT

    Abstract: 674h AN 7580
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


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    THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit 674h AN 7580 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


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    THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit PDF

    ic ns 4263

    Abstract: No abstract text available
    Text: GM71C4263C GM71CS4263CL LG S e m ic o r t C o .,L td . 262,144 WORDS x 16 BIT CMOS DYNAMIC RAM # Description Features The GM71C S 4263C/CL is the new generation dynamic RAM organized 262,144 x 16 bit. GM71C (S)4263 C/CL has realized higher density, higher performance and various


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    GM71C4263C GM71CS4263CL GM71C 4263C/CL GM71C 0D07bStl ic ns 4263 PDF