2SK2225
Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Text: CONTENTS • Index. 4 ■ General Information.
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PM50150K
31Max
2SK2225
2sj150
2sk1058
2SK215 equivalent
2sk135 application note
2SK975 equivalent
2SK2416
2sk135 audio application
2SK135 audio amplifier
2SK2225 equivalent
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AN569
Abstract: MTW20N50E
Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination
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MTW20N50E/D
O-247
AN569
MTW20N50E
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S 170 MOSFET TRANSISTOR
Abstract: MTW20N50E-D TO-247 Package
Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 with Isolated Mounting Hole Designer's MTW20N50E Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.24 OHM
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MTW20N50E/D
O-247
MTW20N50E
MTW20N50E/D*
TransistorMTW20N50E/D
S 170 MOSFET TRANSISTOR
MTW20N50E-D
TO-247 Package
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AN569
Abstract: MTW20N50E
Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N–Channel TO–247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW20N50E
r14525
MTW20N50E/D
AN569
MTW20N50E
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Untitled
Abstract: No abstract text available
Text: MTW20N50E Preferred Device Power MOSFET 20 Amps, 500 Volts N−Channel TO−247 This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is
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MTW20N50E
O-247
r14525
MTW20N50E/D
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Untitled
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain
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2SJ361
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td 6950
Abstract: 2SJ361
Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain
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2SJ361
td 6950
2SJ361
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Hitachi DSA002713
Abstract: No abstract text available
Text: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain
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2SJ361
Hitachi DSA002713
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Untitled
Abstract: No abstract text available
Text: New Product Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 10 nC APPLICATIONS
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Si4890BDY
Si4890BDY-T1-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 10 nC APPLICATIONS
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Si4890BDY
Si4890BDY-T1-E3
18-Jul-08
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transistor mj 1504
Abstract: AN569 MTV20N50E SMD310 mj 1504 transistor mj 1504 scheme
Text: MOTOROLA Order this document by MTV20N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N–Channel Enhancement–Mode Silicon Gate
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MTV20N50E/D
MTV20N50E
MTV20N50E/D*
transistor mj 1504
AN569
MTV20N50E
SMD310
mj 1504 transistor
mj 1504 scheme
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Si3458BDV
Abstract: Si3458BDV-T1-E3
Text: New Product Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 VDS (V) 60 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ) RoHS 3.5 nC APPLICATIONS
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Si3458BDV
Si3458BDV-T1-E3
08-Apr-05
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Si4890BDY
Abstract: Si4890BDY-T1-E3 69502
Text: Si4890BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.012 at VGS = 10 V 16 0.016 at VGS = 4.5 V 14 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4890BDY
Si4890BDY-T1-E3
Si4890BDY-T1-GE3
18-Jul-08
69502
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Untitled
Abstract: No abstract text available
Text: MTV20N50E Designer’s Data Sheet TMOS E−FET.™ Power Field Effect Transistor D3PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This
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MTV20N50E
MTV20N50E/D
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SI3458BDV-T1-GE3
Abstract: Si3458BDV Si3458BDV-T1-E3
Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3458BDV
2002/95/EC
Si3458BDV-T1-E3
Si3458BDV-T1-GE3
18-Jul-08
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8414 hr papst
Abstract: No abstract text available
Text: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum
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D-78112
D-74673
D-84030
8414 hr papst
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Si3458BDV
Abstract: Si3458BDV-T1-E3 Si3458BDV-T1-GE3
Text: Si3458BDV Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) (Ω) ID (A)d 0.100 at VGS = 10 V 4.1 0.128 at VGS = 4.5 V 3.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested
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Si3458BDV
2002/95/EC
Si3458BDV-T1-E3
Si3458BDV-T1-GE3
11-Mar-11
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Hitachi 2SJ
Abstract: Hitachi DSA002779
Text: 2SJ361 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline 2SJ361 Absolute Maximum Ratings Ta = 25°C
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2SJ361
Hitachi 2SJ
Hitachi DSA002779
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2sk 4207
Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Text: CONTENTS Index . 5 General Information . 9
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D-85622
2sk 4207
2SK176
2SK975 equivalent
2SJ177
2SJ318
PM45502C
2SK2225
2sk1058 2SJ162
pwm 100w audio amplifier
2SK1336 equivalent
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TDA 8841 IC
Abstract: No abstract text available
Text: Compact fans for AC and DC version 2014 Trendsetter in fan technology Uncompromising quality made by ebm-papst Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with
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D-78112
D-74673
D-84030
TDA 8841 IC
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Untitled
Abstract: No abstract text available
Text: 25 Vertretungen Zubehör AC-Radiallüfter AC-Axiallüfter ACmaxx / GreenTech EC-Kompaktventilatoren DC-Lüfter - Specials DC-Radiallüfter DC-Axiallüfter Übersicht DC-Axiallüfter / DC-Diagonallüfter 2014-11 DC-Axiallüfter Informationen DC-Axiallüfter
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einbin19
300-DC19
300-AC19
300-AC33
300-DC33
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MSM6950
Abstract: No abstract text available
Text: OKI semiconductor MSM6950B ANALOG FRONT END LSI GENERAL DESCRIPTION The M S M 6950B is an analog front-end LSI which is fabricated by O K I's low power con sumption CMOS silicon gate technology for modem chip set based on Bell 2 1 2A . C C IT T V . 22 and C C IT T V . 22 bis standard. The M SM 6950B consists of tw o BPFs, for lo w band
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MSM6950B
MSM6950B
6950B
d25Hz
725Hz
2900H
1800Hz
1600H
1600Hz
MSM6950
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MOSFET 20n50e
Abstract: 20N50E motorola 20n50e gs 431 transistor
Text: MOTOROLA Order this document by MTW20N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW20N50E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 w ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 20 AMPERES 500 VOLTS
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MTW20N50E/D
MTW20N50E
340K-01
MOSFET 20n50e
20N50E
motorola 20n50e
gs 431 transistor
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c 4977 transistor
Abstract: transistor on 4977 mosfet 452 JSs 97 diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount MTV20N50E TMOS POWER FET 20 AMPERES 500 VOLTS RDS on = 0.240 OHM N-Channel Enhancement-Mode Silicon Gate The D^PAK package has the capability of housing the largest chip
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MTV20N50E
c 4977 transistor
transistor on 4977
mosfet 452
JSs 97 diode
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