SKM224A
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56
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8414 hr papst
Abstract: No abstract text available
Text: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum
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D-78112
D-74673
D-84030
8414 hr papst
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RQK0303MGDQATL-E
Abstract: RQK0303MGDQA SC-59A
Text: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0303MGDQA
REJ03G1276-0400
PLSP0003ZB-A
RQK0303MGDQATL-E
RQK0303MGDQA
SC-59A
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Untitled
Abstract: No abstract text available
Text: Data Sheet PA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
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PA2690T1R
R07DS1000EJ0101
PA2690T1R
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 36 144 A
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P600
Abstract: 15KP 15KP17 15KP18 15KP20 15KP22 15KPJ17 t-d 94v 0
Text: DATA SHEET 15KP SERIES GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE- 17 to 220 Volts 15000 Watt Peak Pulse Power P-600 FEATURES .052 1.3 .048 ( 1.2 ) 1.0 ( 25.4 ) MIN. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O
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P-600
P-600
5000W
P600
15KP
15KP17
15KP18
15KP20
15KP22
15KPJ17
t-d 94v 0
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GSS4816S
Abstract: GSS6900S
Text: Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : CH1 BVDSS 30V N-CH RDS ON 30m N-CH ID 5.7A CH2 BVDSS 30V N-CH RDS(ON) 22m N-CH ID 9.8A GSS6900S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Description The GSS6900S provide the designer with the best combination of fast switching, ruggedized device design,
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GSS6900S
GSS6900S
GSS4816S
GSS4816S
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GSS4816S
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2006/04/28 REVISED DATE : CH1 BVDSS 30V N-CH RDS ON 22m N-CH ID 6.7A CH2 BVDSS 30V N-CH RDS(ON) 13m N-CH ID 11.5A GSS4816S DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE Description The GSS4816S provide the designer with the best combination of fast switching, ruggedized device design,
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GSS4816S
GSS4816S
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet RQK0303MGDQA R07DS0306EJ0500 Previous: REJ03G1276-0400 Rev.5.00 Mar 28, 2011 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 42 m typ (VGS = 10 V, ID = 1.8 A) Low drive current High speed switching
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RQK0303MGDQA
R07DS0306EJ0500
REJ03G1276-0400)
PLSP0003ZB-A
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2n0404
Abstract: SPB80N04S2-04 SPP80N04S2-04
Text: SPP80N04S2-04 SPB80N04S2-04 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version •=175°C operating temperature ID • Avalanche rated P-TO263-3-2 40 V 3.4 mΩ 80 A P-TO220-3-1
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SPP80N04S2-04
SPB80N04S2-04
P-TO263-3-2
P-TO220-3-1
P-TO220-3-1
Q67040-S4260
P-TO263-3-2
Q67040-S4257
2n0404
SPB80N04S2-04
SPP80N04S2-04
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SD 1351
Abstract: No abstract text available
Text: SPICE Device Model SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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SUP/SUB85N03-04P
S-60545Rev.
10-Apr-06
SD 1351
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Values Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC
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GI6679
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/08/04 REVISED DATE : GI6679 BVDSS RDS ON ID P-CHANNEL ENHANCEMENT MODE POWER MOSFET -30V 9m -75A Description The GI6679 provide the designer with the best combination of fast switching, ruggedized device design, low
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GI6679
GI6679
O-251
O-251
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Untitled
Abstract: No abstract text available
Text: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .
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B14N04/K14N04FM
VNP14N04FI/VNV14N04
VNP14N
O-263
VNB14N04,
VNK14N04FM,
VNP14N04FI
VNV14N04
14N04FI-VNV14N04
PowerSO-10
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Untitled
Abstract: No abstract text available
Text: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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VNP28N04FI
VNB28N04/VNV28N04
VNP28N
VNP28N04FI,
VNB28N04
VNV28N04
MOSFETSNB28N04-VNV28N04
PowerSO-10
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Untitled
Abstract: No abstract text available
Text: rz J Ä T# S C S -T H O M S O N [M G IM llL iO T » ! V N H 100N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TA R G E T D A T A TYPE Vclamp RDS on 1lim VN H 100N04 42 V 0 .0 1 2 Û 100 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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100N04
O-218
VNH100N04
VNH100N04
7T2T237
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Untitled
Abstract: No abstract text available
Text: Æ T S G S -1H 0M S 0N D lsi S IIL[lCTIs! iD©S VNW50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S (o n ) I lim VNW 50N 04A 42 V 0.012 Q. 50 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNW50N04A
O-247
VNW50N04A
P025P
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Untitled
Abstract: No abstract text available
Text: Æ T S G S - 1 H M S N n lsi S IIL[iCTIsî iD©S V N W 100 N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET P R E L IM IN A R Y D A T A TYPE V clamp RDS(on) 11im VNW 100N 04 42 V 0 .012 Q. 1 00 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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O-247
VNW100N04
P025P
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3217b
Abstract: NEC 4216160 4216160 IC-3217B 4218160
Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D escription The /iPD42S16160, 4216160, 42S18160, 4218160 are 1 048 576 words by 16 bits dynamic CMOS RAMs.
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uPD42S16160
uPD4216160
uPD42S18160
uPD4218160
16-BIT,
/iPD42S16160,
42S18160,
PD42S16160,
42S18160
50-pin
3217b
NEC 4216160
4216160
IC-3217B
4218160
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Untitled
Abstract: No abstract text available
Text: SD-3988Q-010 24,41 [,981 ] 2,54 1 , 100 ] 14,71 570] B+5,08 [B+,200] 5,00 [,197] 0,80 [,024] ADX. V I E ! SCALE 1:1 9 BIRCUIT SHOWN H m 1,80 [.083] 01 10 [ ,043] H i H 1 H _ T H B 2,50 H 1,70 [,087] 0,50 0 20 ] 0,90 [,035] 2,54 [,100] ' 3,78 149] — t ^ — t— ®
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SD-3988Q-010
8831XX
SD-39880-010
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Untitled
Abstract: No abstract text available
Text: se MIKRDn Absolute Maximum Ratings V a lu e s Units Symbol C onditions 1 VcES VcGR lc IcM Vges Rge = 20 k ii Tease = 25/80 °C Tease = 25/80 °C¡ tp = 1 ms 1700 1700 7 5 /5 0 144/100 ±20 per IGBT, Tease = 25 °C AC, 1 min. DIN 4 0 040 DIN IEC 68T .1 500
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fll3bb71
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Untitled
Abstract: No abstract text available
Text: VNP49N04FI VNB49N04 / VNV49N04 “OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V CLAMP R DS ON • l im 42 V 20 m£2 49 A VNP49N 04FI VN B49N 04 VN V49N 04 „ „ „ „ „ „ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP
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VNP49N04FI
VNB49N04
VNV49N04
VNP49N
VNP49N04FI,
VNB49N04,
VNV49N04
O-263
PowerSO-10â
VNP49N04FI
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avantek microwave
Abstract: AVANTEK MSA Avantek UA-152
Text: AVANTEK INC SQE llMlifak QQQbfiSb Ö D AVANTEK data sheet MSA-0400 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers October, 1989 Tws-Ol Avantek Chip Outline1 Features • • • • Cascadable 50 £2 Gain Block 3 dB Bandwidth; DC to 4.0 GHz
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MSA-0400
MSA-0400
avantek microwave
AVANTEK MSA
Avantek UA-152
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Untitled
Abstract: No abstract text available
Text: s e M IKRO n Absolute Maximum Ratings Sym bol V ds V dgr Id Idm V gs Conditions ' Rgs = 20 kQ Visol humidity climate Units 800 V 800 V 36 144 A A ±20 V 700 W - 5 5 . . .+150 °C 2 500 V Pd Tj, Tstg Values A C , 1 min DIN 40 040 DIN IEC 68 T.1 55/150/56 A
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fll3bb71
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