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    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM1213-10 Internally Matched Power GaAs FETs X, Ku-Band Features • High power - PidB = 40.5 dBm at 12.7 GHz to 13.2 GHz • High gain - GidB - 6.0 dB at 12.7 GHz to 13.2 GHz • Broadband internally matched • Hermetically sealed package


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    TIM1213-10 2-11C1B) 1213-10L TD1725D PDF