Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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PDF
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UNITRODE
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles
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bq4014/bq4014Y
32-pin
10-year
256Kx8
bq4014
152-bit
UNITRODE
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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bq4010/bq4010Y
28-pin
10-year
bq4010
536-bit
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PDF
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bq4010
Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During
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bq4010/Y/LY
SLUS116A
28-Pin
536-bit
bq4010
bq4010LY
bq4010MA-150
bq4010MA-200
bq4010MA-70
bq4010MA-85
bq4010Y
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PDF
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T4 1060
Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)
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SST29EE512
SST29EE512512Kb
S71060
S71060-09-000
T4 1060
SST29EE512-70-4I-NHE
32-PIN
SST29EE512
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PDF
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NT5TU32M16AG-37B
Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8
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NT5TU128M4AB/NT5TU128M4AE
NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE
NT5TU32M16AF/NT5TU32M16AG
/NT5TU32M16AS
512Mb
NT5TU32M16AG-37B
NT5TU128M4AE
nt5tu64m8
nt5tu64m
NT5TU32M16
NT5T
nt5tu32m16ag
nt5tu64m8af
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PDF
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SST39LF512
Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet
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Original
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SST39LF512
SST39LF010
SST39LF020
SST39LF040
SST39VF512
SST39VF010
SST39VF020
SST39VF040
SST39LF/VF512
512Kb
SST39LF040
SST39VF040
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with
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bq4852Y
512Kx8
304-bit
10-year
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility
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Original
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bq4010/bq4010Y
bq4010
536-bit
28-pin
10-year
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PDF
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DS1250
Abstract: DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC
Text: DS1250Y/AB 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,
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DS1250Y/AB
4096k
DS1250Y)
DS1250AB)
32-pin
DS1250
DS1250AB
DS1250AB-100
DS1250AB-70
DS1250Y
DS1250Y-100
DS1250Y-70
DS9034PC
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PDF
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25x16
Abstract: ST24C16 ST24W16 ST25C16 ST25W16
Text: ST24C16, ST25C16 ST24W16, ST25W16 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24x16 versions – 2.5V to 5.5V for ST25x16 versions
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ST24C16,
ST25C16
ST24W16,
ST25W16
ST24x16
ST25x16
ST24W16
ST24C16
ST24/25C16
25x16
ST24C16
ST25C16
ST25W16
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PDF
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TAG 8926
Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130
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Original
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MCIMX31
MCIMX31L
MCIMX31RM
IOIS16
IOIS16/WP
MCIMX31L
TAG 8926
Lpg 899
SDC 2921
TF 6221 HEN LED display
12V+RELAY+1+C/8 pin ic sdc 3733
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles
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Original
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bq4010/Y/LY
SLUS116A
28-Pin
536-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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Original
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
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PDF
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M34D64
Abstract: M34D64-R M34D64-W
Text: M34D64 64 Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Quarter of Memory FEATURES SUMMARY 2 • Two Wire I C Serial Interface Supports 400 kHz Protocol ■ Figure 1. Packages Single Supply Voltage: – 2.5V to 5.5V for M34D64-W – 1.8V to 5.5V for M34D64-R
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M34D64
M34D64-W
M34D64-R
M34D64
M34D64-R
M34D64-W
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PDF
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bq4014
Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy
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Original
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bq4014/bq4014Y
256Kx8
bq4014
152-bit
32-pin
10-year
BQ4014MB-120
BQ4014MB-85
bq4014Y
BQ4014YMB-85
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PDF
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ir 0948
Abstract: No abstract text available
Text: Driver Transformers •4- .750 4 .660 t □ 11 11 1! II fj I -*j 1-4- .8 5 0 - ► 1 Tififr I ►j .515 I-4 -.2 0 0 -4—.850 — 4 .830 II II U II LJ Features t- -i TDH187 •Core:EI187 • Ae 0.228 • le 4.01 • AW 0.316 .1 7 5 4 TDH2425 • Core: El 2425
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OCR Scan
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TDH187
EI187
TDH2425
TDH375
TDH21
TDH625
ir 0948
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PDF
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10ST10
Abstract: lq55
Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type
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EN4794B
LC3564S,
ST-70/85/10
8192wordsX8
LC3564SS,
LC3564SM,
LC3564ST
8192-word
10ST10
lq55
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PDF
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SS 1091
Abstract: SED1510F0C LCD ALPHANUMERIC DISPLAY 1091
Text: SED1510 CMOS SEGMENT-TYPE LCD CONTROLLER DRIVER • Serial Data Interface • Built-in Display data RAM • 4 COM Driver Output and 32 SEG Driver Output • DESCRIPTION The SED1510 is an intelligent CMOS LCD driver-controller for segment type liquid crystal display with the
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OCR Scan
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SED1510
SED1510
SEG10
SEG11
SEG12
SEG13
SEG14
SEG15
SS 1091
SED1510F0C
LCD ALPHANUMERIC DISPLAY
1091
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PDF
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DS1245V
Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
Text: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola
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OCR Scan
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DS1245Y/AB
1024K
DS1245Y)
DS1245AB)
32-pin
2blH13D
DS1245YL/ABL
34-PIN
DS1245V
DS1245
DS1245AB
DS1245Y
DS1243AB-100
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PDF
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34-PIN
Abstract: DS1345 DS1345W DS9034PC
Text: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8
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OCR Scan
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DS1345W
1024K
128Kx
34-PIN
DS1345
DS1345W
DS9034PC
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PDF
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Untitled
Abstract: No abstract text available
Text: A J • ■ HY62256A H Y U N o n i m x M lt CMOS SRAM s e m ic o n d u c t o r M241201B-APR91 DESCRIPTION FEATURES The HY62256A is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabricated using HYUNDAI’S high perfor m ance twin tub CM OS process. This high
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OCR Scan
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HY62256A
M241201B-APR91
HY62256A
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PDF
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Untitled
Abstract: No abstract text available
Text: INTEGRATE] DEVICE bbE J> m 4A25771 GG12414 Ì7D « I D T VERY LOW POWER 3.3V CMOS FAST SRAM 256k 32k X 8-BIT) ADVANCE INFORMATION IDT713256SL Integrated Device Technology, Inc. FEATURES • Ideal for 16/32-bit notebook/sub-notebook cache at 20,25, and 33MHz, and for other battery-operated equipment
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OCR Scan
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4A25771
GG12414
IDT713256SL
16/32-bit
33MHz,
500uA
20/25/30ns
300uA
28-pin
IDT713256SL
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PDF
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