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    TECH MOS TECHNOLOGY Search Results

    TECH MOS TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    TECH MOS TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cecc32101-801

    Abstract: cecc32101801 CECC32101 CERAMIC CHIP CAPACITORS temex W CECC32101-801 specification 5KR11 CERAMIC CHIP CAPACITORS temex W 2C1 bx chb temex
    Text: CERAMIC & MOS CAPACITORS Contents CERAMIC & MOS CAPACITORS CONTENTS CONTENTS w e N f o t i y Spir nolog Tech PAGE GENERAL INFORMATION . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6-2 All specifications contained in that catalog are subject to change without notice.


    Original     		PDF

    Tech MOS Technology

    Abstract: 27BSC
    Text: Tech MOS Technology E 0.015X45º SOP-8 Packaging Outline H e2 e1 D A1 A C L 0.004max. SYMBOLS Millimeters Inches MIN. Nom. MAX. MIN. Nom. MAX. A 1.35 1.55 1.75 0.053 0.061 0.069 A1 0.10 0.17 0.25 0.004 0.007 0.010 C 0.18 0.22 0.25 0.007 0.009 0.010 D 4.80


    Original     		PDF 015X45º 004max. 27BSC 05BSC Tech MOS Technology 27BSC

    Untitled

    Abstract: No abstract text available
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF SCHS262 CD74FCT651, CD74FCT652 CD74FCT651 CD74FCT652

    Untitled

    Abstract: No abstract text available
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF SCHS262 CD74FCT651, CD74FCT652 CD74FCT651 CD74FCT652

    CD74FCT651

    Abstract: CD74FCT651EN CD74FCT651M CD74FCT652 CD74FCT652EN CD74FCT652M
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF CD74FCT651, CD74FCT652 SCHS262 CD74FCT651 CD74FCT652 CD74FCT651EN CD74FCT651M CD74FCT652EN CD74FCT652M

    Untitled

    Abstract: No abstract text available
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF SCHS262 CD74FCT651, CD74FCT652 CD74FCT651 CD74FCT652

    Untitled

    Abstract: No abstract text available
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF SCHS262 CD74FCT651, CD74FCT652 CD74FCT651 CD74FCT652

    CD74FCT651

    Abstract: CD74FCT651EN CD74FCT651M CD74FCT652 CD74FCT652EN CD74FCT652M
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF CD74FCT651, CD74FCT652 SCHS262 CD74FCT651 CD74FCT652 CD74FCT651EN CD74FCT651M CD74FCT652EN CD74FCT652M

    CD74FCT651

    Abstract: CD74FCT651EN CD74FCT651M CD74FCT652 CD74FCT652EN CD74FCT652M SCHS262
    Text: CD74FCT651, CD74FCT652 Data sheet acquired from Harris Semiconductor SCHS262 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • CD74FCT652 - Noninverting • Family Features - SCR Latchup Resistant BiCMOS Process and Circuit Design


    Original     		PDF CD74FCT651, CD74FCT652 SCHS262 CD74FCT651 CD74FCT652 CD74FCT651EN CD74FCT651M CD74FCT652EN CD74FCT652M SCHS262

    CD74FCT541* harris

    Abstract: CD74FCT540 CD74FCT540E CD74FCT540M CD74FCT541 CD74FCT541E CD74FCT541M CD74FCT541SM
    Text: Data sheet acquired from Harris Semiconductor SCHS257 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.4ns at VCC = 5V, TA = 25oC, CL = 50pF • CD74FCT540 - Inverting


    Original     		PDF SCHS257 CD74FCT540 CD74FCT541 CD74FCT540, CD74FCT540 CD74FCT541 CD74FCT541* harris CD74FCT540E CD74FCT540M CD74FCT541E CD74FCT541M CD74FCT541SM

    CD74FCT564

    Abstract: SCHS259 CD74FCT564E CD74FCT564M CD74FCT574 CD74FCT574E CD74FCT574M CD74FCT574SM
    Text: CD74FCT564, CD74FCT574 Data sheet acquired from Harris Semiconductor SCHS259 D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C • Buffered Inputs • Typical Propagation Delay: 5.6ns at VCC = 5V, TA = 25oC • Positive Edge Triggered


    Original     		PDF CD74FCT564, CD74FCT574 SCHS259 CD74FCT564 CD74FCT564 CD74FCT574 SCHS259 CD74FCT564E CD74FCT564M CD74FCT574E CD74FCT574M CD74FCT574SM

    HARRIS PACKAGE LOGIC FCT

    Abstract: CD74FCT843A CD74FCT843AM CD74FCT844A CD74FCT844AEN
    Text: CD74FCT843A, CD74FCT844A Data sheet acquired from Harris Semiconductor SCHS267 BiCMOS FCT Interface Logic, 9-Bit Transparent Latches, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR January 1997 Features MOS Use C Circuit Design Speed of Bipolar FAST /AS/S


    Original     		PDF CD74FCT843A, CD74FCT844A SCHS267 FCT843A) CD74FCT843A HARRIS PACKAGE LOGIC FCT CD74FCT843A CD74FCT843AM CD74FCT844A CD74FCT844AEN

    CD74FCT861A

    Abstract: No abstract text available
    Text: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,


    Original     		PDF CD74FCT861A SCHS268 10-Bit CD74FCT861A CD74FCT861AM

    CD74FCT861A

    Abstract: No abstract text available
    Text: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,


    Original     		PDF CD74FCT861A SCHS268 10-Bit CD74FCT861AM CD74FCT861A

    CD74FCT861A

    Abstract: No abstract text available
    Text: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,


    Original     		PDF CD74FCT861A SCHS268 10-Bit CD74FCT861AM CD74FCT861A

    CD74FCT861A

    Abstract: CD74FCT861AM CD74FCT861AM96
    Text: CD74FCT861A Data sheet acquired from Harris Semiconductor SCHS268 January 1997 Features BiCMOS FCT Interface Logic, 10-Bit Bus Transceiver, Three-State D ENDE M M O S EC IGN NOT R NEW DES ology n Tech FOR MOS Use C • Buffered Inputs • Typical Propagation Delay: 6.0ns at VCC = 5V,


    Original     		PDF CD74FCT861A SCHS268 10-Bit CD74FCT861AM CD74FCT861A CD74FCT861AM CD74FCT861AM96

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 SGS-THOMSON TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro­ duced with MOS, and not the usual bipolar tech­ nology. Special characteristics are high switching speeds and easy driving. This introductory note describes


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    Untitled

    Abstract: No abstract text available
    Text: rz T SGS-THOMSON *•7#. ¡»mmgsraraofss TECHNICAL NOTE AN INTRODUCTION TO POWER MOS A POWER MOS transistor is a power transistor pro­ duced with MOS, and not the usual bipolar tech­ nology. Special characteristics are high switching speeds and easy driving. This introductory note describes


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INFORMATION POWER MOS devices are made using well proven SGS-THOMSON technology. POWER MOS tech­ nology stands, with equal stature, firmly alongsi­ de the company’s POWER BIPOLAR technologies. This DATABOOK has been produced to comple­ ment the advances in silicon technology and iso­


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    VDMOS

    Abstract: VDMOS DEVICE
    Text: /T T SGS-THOMSON ^ 7 Ê R Æ O iS ^ O ilL tlÊ iri^ lS ^ D Ê S TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS


    OCR Scan     		PDF S-8471 VDMOS VDMOS DEVICE

    VDMOS DEVICE

    Abstract: No abstract text available
    Text: S G S -T H O M S O N itLKSTTMIiÎODÊS TECHNICAL NOTE EVOLUTION OF POWER MOS TRANSISTORS The vertical double diffused MOS silicon gate tech­ nology represents the final evolution of the deve­ lopment of a process to obtain POWER MOS devices, started in SGS in 1977.


    OCR Scan     		PDF S-8471 VDMOS DEVICE

    IRFP450FI

    Abstract: IRF540FI ISOWATT221 Tech MOS Technology STLT20FI
    Text: GENERAL INFORMATION The Power M OS devices presented in this databook are made using well proven SGS-THOMSON tech­ nology. SGS-THO MSO N Power MOS technology stands, with equal stature, firmly alongside the com pany's wide range of devices in Power BIPOLAR and


    OCR Scan     		PDF BUZ71FI STLT19FI STLT20FI IRFZ20FI IRF520FI IRF530FI IRF540FI IRF620FI IRF820FI IRF821 IRFP450FI ISOWATT221 Tech MOS Technology

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INFORMATION POW ER MOS devices are made using well proven SG S-THO M SO N technology. POW ER M OS tech­ nology stands, with equal stature, firmly alongsi­ de the company’s POWER BIPOLAR technologies. This DATABOOK has been produced to comple­


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    VL2793PC

    Abstract: vl2797 fd1771 floppy stepping motor diagram VL2797PC VL2797CC FD-179x
    Text: V L S I Tech nology , in c . VL2793 • VL2797 FLOPPY DISK FORMATTER/ CONTROLLER FAMILY FEATURES DESCRIPTION • On-chip PLL data separator • Soft sector format compatibility The VL279X are N-Channel Silicon Gate MOS LSI devices which perform the functions of a Floppy Disk Format­


    OCR Scan     		PDF VL2793 VL2797 F0179X VL279X VL279X, FD1771 FD179X 250ns 500ns for51 VL2793PC vl2797 floppy stepping motor diagram VL2797PC VL2797CC FD-179x