TSHF5400
Abstract: No abstract text available
Text: TSHF5400 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5400
TSHF5400
D-74025
02-Aug-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSHF5400 Vishay Telefunken ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5400
TSHF5400
D-74025
02-Aug-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSHF5200 Vishay Telefunken ¾ High Speed IR Emitting Diode in ø 5 mm T–1 Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5200
TSHF5200
D-74025
02-Aug-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSHF5400 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5400
TSHF5400
D-74025
20-May-99
|
PDF
|
BPV10NF
Abstract: No abstract text available
Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and
|
Original
|
BPV10NF
950nm)
870nm)
78mm2
D-74025
|
PDF
|
TSHF5400
Abstract: No abstract text available
Text: TSHF5400 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5400 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5400
TSHF5400
D-74025
02-Aug-99
|
PDF
|
TSHF5200
Abstract: No abstract text available
Text: TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5200
TSHF5200
D-74025
02-Aug-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5200
TSHF5200
D-74025
20-May-99
|
PDF
|
8439
Abstract: BPV10NF
Text: TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and
|
Original
|
BPV10NF
950nm)
870nm)
78mm2
D-74025
8439
|
PDF
|
TSHF5200
Abstract: No abstract text available
Text: TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm T–1¾ Package Description 94 8390 TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic
|
Original
|
TSHF5200
TSHF5200
D-74025
02-Aug-99
|
PDF
|
Nauen
Abstract: Telefunkenzeitung hitachi ft 4500 l Deutsche Post siemens zeitung Seite47 EIFAh Mess sender
Text: Gesellschaft für drahtlose Telegraphie :b m• H: System Telefunken entstanden aus den funkentelegraphischen Abteilungen der Allgemeinen Elektrizitäts-Gesellschaft System Slaby - Arco und Siemens & Halske (System Prof. Braun und Siemens & Halske) Z e n t r a l v e r w a l t u n g : Berlin SW11, Hallesches Ufer 12/13
|
Original
|
|
PDF
|
BPV10NF
Abstract: No abstract text available
Text: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
|
PDF
|
BPV10NF
Abstract: No abstract text available
Text: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BPV10NF Vishay Telefunken High Speed Silicon PIN Photodiode Description 94 8390 BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T–1¾ plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs l=950nm and GaAlAs (l=870nm) IR emitters. BPV10NF is optimized for serial infrared links
|
Original
|
BPV10NF
BPV10NF
950nm)
870nm)
78mm2
D-74025
20-May-99
|
PDF
|
|
|
BPW86
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC mBnSNBOBN electronic CrulM•fechootogAS 1?E D ■ ÖTSOOTb 0000500 T ■ A L G 6 BPW 86 j _ T - w - g a t Silicon Photo PIN Diode N-Type Applications: Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.
|
OCR Scan
|
1000M
BPW86
|
PDF
|
photodiode bpw 46
Abstract: BPW24 "PHOTOVOLTAIC CELL"
Text: ki 1. TELEFUNKEN ELECTRONIC 17E D • fl'iSOG'ïb 00003Rfl 7 BPW 24 *¡nHLIlJFty]I?flGSIlI?i] electronic CrutMTichnotoote» _ T -H I-S 3 Silicon Photo PIN Diode Applications: High speed photo detector Features: • Hermetically sealed case
|
OCR Scan
|
00003Rfl
ECT018
5033/ICE
U/ps950nm
photodiode bpw 46
BPW24
"PHOTOVOLTAIC CELL"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Temic S e m i c o n d u c t o r s IrDA-Compatible Data Transmission TELEFUNKEN Semiconductors 04.96 Temic S e m i c o n d u c t o r s Table o f Contents Paving the Way to a Wireless Information
|
OCR Scan
|
D-74025
|
PDF
|
configuration of IC 7912
Abstract: 7912 pin configuration ic 7912 7912 ct S191P
Text: TELEFUNKEN ELECTRONIC •ÜTlUlPtUUKtiK e le c tro n ic CrMtJvtTWwotoc*» 17E D ■ ß^EOD^b DOOÔSSfl 3 ■ A L G G S191P T-*t l"g3 _ Silicon Photo PIN Diode N-Type) Applications Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.
|
OCR Scan
|
S191P
S191P
configuration of IC 7912
7912 pin configuration
ic 7912
7912 ct
|
PDF
|
BPW87
Abstract: No abstract text available
Text: L i i - TELEFUNKEN ELECTRONIC 17E D • Ô^SOCHt. ODDfiSm £ BPW 87 electronic CcMlMüKhnûiogw« _ T - m - S 3 Silicon Photo PIN Diode N-Type Applications Wide band detector for demodulation of fast signals, e.g. of lasers and GaAs-LED's.
|
OCR Scan
|
BPW87
BPW87
|
PDF
|
u 327 md
Abstract: U427 T 427 transistor U427B u327md U428 427 DIP8 U327 U428B-FP RC transmitter
Text: ^ MME fl'iSDOTb 0GlGbS3 7 W t A L G G » U 427 B • U 428 B-FP DRIVER FOR IR TRANSMITTER DIODES CURRENT SINK 'T' 3 “07 w “ TELEFUNKEN ELECTRONIC Tech n o lo g y: Bipolar . Features: • Current stabilisation starts at Vr = 1.2 V • Control voltage VJ = 3 . 10 V
|
OCR Scan
|
|
PDF
|
CIP200
Abstract: bpw84 8417E ks920
Text: 17E D TELEFUNKEN ELECTRONIC • ÛTEDOTb 0D0fl4cib 7 « A L G G BPW 84 m iR D K lK lK l electronic _ T “*fI" S 3 Out* T«chooioate% >J Silicon Photo PIN Diode Applications: High speed photo detector 1 J Features: • • • • • Angle of half sensitivity ± p = 65°
|
OCR Scan
|
IAL66
CIP200
bpw84
8417E
ks920
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Tem ic TELEFUNKEN Semiconductors BPV 10 NF High Speed Silicon PIN Photodiode Description BPV10NF is a high sensitive and wide bandwidth PIN photodiode in a standard T -P A plastic package. The black epoxy is an universal IR filter, spectrally matched to GaAs X=950nm and
|
OCR Scan
|
BPV10NF
950nm)
870nm)
78mm2
D-74025
|
PDF
|
BV EI 304 3160
Abstract: str f 6456 ic sw 2604 BV EI 304 3510 BV EI 303 3535 STR 6755 STR 6456 STR G 6352 AMI Semiconductor 9449 sw 2604 ic
Text: T e m ic Sales Offices Semiconductors Addresses Europe France TEMIC France Les Quadrants 3, avenue du centre B.P. 309 78054 St.-Q uentin-en-Y velines Cedex Tel: 33 1 3060 7000 Fax: 33 1 3060 7111 Germany TEMIC TELEFUNKEN m icroelectronic GmbH Erfurter Strasse 31
|
OCR Scan
|
|
PDF
|
CQX48B
Abstract: IR Emitters "IR Emitters"
Text: VISH A Y Vishay Telefunken ▼ Selector Guide IREDs Infrared Emitting Diodes Package Dim. Fig- Characteristics Jype + /- tp Standard IR Emitters GaAs 950 nm in Plastic Package T 40° 25 ! CQY36N am 10 26 L / mW/sr Ip / mA VF/ V CQY37N 12 ° 5 (>2.2) TSUS4400
|
OCR Scan
|
CQY36N
CQY37N
TSUS4400
CQX48B
TSSS2600
TSUS5200
TSUS5201
TSUS5202
TSUS5400
TSUS5401
IR Emitters
"IR Emitters"
|
PDF
|