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    Vishay Intertechnologies PTF513K0200BYR6

    Res Metal Film 3.02kOhm 0.1% ? 10ppm/?C 1/20W Axial Leaded T/R - Tape and Reel (Alt: PTF513K0200BYR6)
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    Avnet Americas PTF513K0200BYR6 Reel 20 Weeks 1,000
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    • 1000 $2.4534
    • 10000 $1.89336
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    Vishay Intertechnologies PTF5130K000BYR7

    Res Metal Film 30kOhm 0.1% ? 10ppm/?C 1/20W Axial Leaded T/R - Tape and Reel (Alt: PTF5130K000BYR7)
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    Avnet Americas PTF5130K000BYR7 Reel 20 Weeks 1,500
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    Newark PTF5130K000BYR7 Reel 1,500
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    • 1000 $3.01
    • 10000 $2.32
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    Vishay Intertechnologies PTF5130K100BYBF

    Res Metal Film 30.1kOhm 0.1% ? 10ppm/?C 1/20W Axial Leaded Bulk - Bulk (Alt: PTF5130K100BYBF)
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    Avnet Americas PTF5130K100BYBF Bulk 20 Weeks 100
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    • 1000 $2.65776
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    Vishay Intertechnologies PTF51316R00FZEK

    Res Metal Film 316Ohm 1% ? 5ppm/?C 1/20W Axial Leaded Bulk - Bulk (Alt: PTF51316R00FZEK)
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    Avnet Americas PTF51316R00FZEK Bulk 20 Weeks 100
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    • 100 $9.5316
    • 1000 $3.36336
    • 10000 $3.36336
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    Vishay Intertechnologies PTF513K0500BYEK

    Res Metal Film 3.05kOhm 0.1% ? 10ppm/?C 1/20W Axial Leaded Bulk - Bulk (Alt: PTF513K0500BYEK)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PTF513K0500BYEK Bulk 20 Weeks 100
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    • 1000 $2.65776
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    Newark PTF513K0500BYEK Bulk 100
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    • 100 $12.04
    • 1000 $9.67
    • 10000 $8.99
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    TF 513 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4890

    Abstract: No abstract text available
    Text: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


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    PDF EN4137 2SC4890 100ns 2039D 2SC4890] 2SC4890

    2SC4890

    Abstract: No abstract text available
    Text: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


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    PDF EN4137 2SC4890 100ns 2039D 2SC4890] 2SC4890

    2SC4891

    Abstract: EN4138
    Text: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


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    PDF EN4138 2SC4891 100ns 2039D 2SC4891] 2SC4891 EN4138

    2SC4891

    Abstract: EN4138 c 4138
    Text: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).


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    PDF EN4138 2SC4891 100ns 2039D 2SC4891] 2SC4891 EN4138 c 4138

    74HC1GU04

    Abstract: 74HC1GU04GW 74HCU04 HC1GU04
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1998 Nov 18 Philips Semiconductors Product specification Inverter 74HC1GU04 FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns.


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    PDF 74HC1GU04 SCA60 245106/00/01/pp16 74HC1GU04 74HC1GU04GW 74HCU04 HC1GU04

    74AHC1GU04

    Abstract: 74AHC1GU04GW
    Text: INTEGRATED CIRCUITS DATA SHEET 74AHC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1999 May 19 Philips Semiconductors Product specification Inverter 74AHC1GU04 FEATURES • Symmetrical output impedance QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.


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    PDF 74AHC1GU04 EIA/JESD22-A114-A EIA/JESD22-A115-A 245002/00/01/pp16 74AHC1GU04 74AHC1GU04GW

    74HC1G32

    Abstract: 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A
    Text: INTEGRATED CIRCUITS 74HC1G32 74HCT1G32 2-input OR gate Product specification File under Integrated Circuits, IC06 1997 Dec 16 Philips Semiconductors Product specification 74HC1G32 74HCT1G32 2-input OR gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns


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    PDF 74HC1G32 74HCT1G32 SCA55 budgetnum/printrun/ed/pp12 74HC1G32 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A

    NAND 74 SOT353

    Abstract: 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G00; 74HCT1G00 2-input NAND gate Product specification File under Integrated Circuits, IC06 1998 Jul 30 Philips Semiconductors Product specification 74HC1G00; 74HCT1G00 2-input NAND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns


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    PDF 74HC1G00; 74HCT1G00 74HC1G/HCT1G00 SCA60 245106/00/01/pp12 NAND 74 SOT353 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430

    hc1g08

    Abstract: 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G08; 74HCT1G08 2-input AND gate Product specification File under Integrated Circuits, IC06 1998 Nov 10 Philips Semiconductors Product specification 74HC1G08; 74HCT1G08 2-input AND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.


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    PDF 74HC1G08; 74HCT1G08 SCA60 245106/00/01/pp12 hc1g08 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g

    74HC-HCT02

    Abstract: 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G02; 74HCT1G02 2-input NOR gate Product specification File under Integrated Circuits, IC06 1998 Aug 31 Philips Semiconductors Product specification 2-input NOR gate FEATURES 74HC1G02; 74HCT1G02 QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.


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    PDF 74HC1G02; 74HCT1G02 SCA60 245106/00/01/pp12 74HC-HCT02 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02

    Untitled

    Abstract: No abstract text available
    Text: I METAL FILM FLAT CHIP RESISTORS JIS C 5222-1989*&&,p, q-~~ % RN73 RN73 RN73 Tf g I TYPE ~ 2A 26 2E ’ & DlMENSlONS m m WkO.2 LkO.2 2.0 1.25 1.6 2.5 3.2 - ’ c 0.4 + 0.2 I ’ d IfI “0: 0.3 0.5 LO.3 0.4 tf0.1 . 0.5 0.6 : l‘.C.Ii. +!!SSMt f% %!


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    PDF 51-150k lo-150k lo-360k IO-360k 560k-111 lo-510k 51-2401i lo-240k 51-13Oli

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


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    PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    Untitled

    Abstract: No abstract text available
    Text: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.


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    PDF I50F-060 I75F-060 2MBI100F-060 2MBI50L-060 2MBI75L-060 2MBI100L-060 2MBI150L-060 2MBI150LB-060 2MBI200L-060 2MBI200LB-060

    Untitled

    Abstract: No abstract text available
    Text: AN5137K AN5137K * 7 - t U trWft'i'WffliftiiM, PLLfcifc, AGC, AFC, SIFH1H Color TV Video IF Amplifier, PLL Detector, AGC, AFC, SIF Circuit • tt « AN 5137 K Ii , Unit: mm f] =7 - TV COB*\% 43|B]JgJ £ j; V %p tf ^ Jfj jj. g ffl catti #i ;CATvuwter-5 h x i,


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    PDF AN5137K 28-Lead 5135N /5138N AN5136K, AN5137KiOttlii* AN5135NK/ 5138NK

    2mb1200

    Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060
    Text: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600


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    PDF 2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 2MB1200LB-060 2MBI300L-060 2MBI300LB-060 2MBI400L-060 2mb1200 M-219 m219 1MBI300F-060 2mbi200f

    d0117

    Abstract: No abstract text available
    Text: 5134300 K E N N E D Y CM S C OR P K E N N E D Y -CM S} CORP 93D 00114 D T-'tf-'ûS'10 D eT J S 1 3 4 3 D D 0 G □ □ 114 4 High Frequency, High Slew Rate Product Specifications and Price information Hybrid Amplifiers Models 750, 760, 770, 780 Features:


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    PDF 125mA 513M30D d0117

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN4138 f 2SC4891 N PN T riple Diffused P la n a r Silicon T ra n sisto r Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu r e s • H igh Speed tf= 100ns typ . • H igh reliability (Adoption of HVP process).


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    PDF EN4138 2SC4891 100ns T03PM 5132MH

    TSP50C42

    Abstract: tsp50c4x TSP50C TSP50C41
    Text: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this


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    PDF TSP50C4X BRN09 BRN10 TSP50C42 TSP50C TSP50C41

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber: E N 4137 2SC4890 No.4137 N PN Triple Diffused P la n a r Silicon T ran sisto r , Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications , F e a tu r e s • H igh Speed tf= 100ns typ . - H igh reliability (Adoption of H V P process).


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    PDF 2SC4890 100ns 00S03fl

    51374-3028

    Abstract: SD-51374-027
    Text: 10 ä is NOTES: 2. MATERIAL ; v > : ; : ^ 7 : l c p G S B tf|j y ’- : K e a u l 94v -o HOUSINGsLCPiLIQUID CRYSTAL POLYMER ,GLASS FILLED,WHITE,UL94V-0 7 ? 3 1n l - 5 ' : P P S, UL94V-0 ACTUATOR:PPS POLYPHENYLENE SULFIDE),GLASS FILLED,BROWN,UL94V-0 ( t = 0. 1 5)


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    PDF UL94V-O UL94V-0 703-1JL-9 UL94V-0 SD-51374-027 EN-02JA1021) 51374-3028 SD-51374-027

    mosfet 5130

    Abstract: CA5130M
    Text: CA5130, CA5130A Í D SHARRIS U U E M t c tf l D U C T O R 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage CA5130A and CA5130 are integrated circuit operational am plifiers that combine the advantage of both CMOS and


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    PDF CA5130, CA5130A 15MHz, CA5130A CA5130 CA5130AE CA5130AT CA5130E CA5130M mosfet 5130 CA5130M

    Untitled

    Abstract: No abstract text available
    Text: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.


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    PDF SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 500ps -300mA, -220mA 10K/100K

    Untitled

    Abstract: No abstract text available
    Text: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.


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    PDF SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 500ps -300mA, -220mA 10K/100K 24-pin 28-pin SY10/100/101474-3

    transistor c 4137

    Abstract: 16AF a006 2SC4890 le1110A BU510
    Text: Ordering number: E N 4 1 3 7 N°-4i37. II 2SC4890 N P N T riple Diffused P la n a r Silicon T ra n s isto r Very High-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • H ig h Speed tf= 100ns typ . •H igh re lia b ility (A doption of H V P process).


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    PDF EN4137 2SC4890 100ns transistor c 4137 16AF a006 2SC4890 le1110A BU510