N2M400
Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)
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KS05013
MBN800E33D
MBN1200E33D
MBN1200D33C
MBN600C33A
MBN400C33A
MBN1200E25C
N2M400
MBN1200D33A
MBM300GS12AW
C2E1
MBM200JS12EW
MBN600C33A
MBN600GS12AW
MBM75GS12AW
MBN1200D33C
MBN1200E25C
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S1723-04
Abstract: BPW34 application VTD34 BPW34 BPW34 application note SFH206K BPW34F SFH205 VTD205 VTD205K
Text: Alternate Source/ Second Source Photodiodes VTD31AA CLD31AA INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 13 CERAMIC CHIP ACTIVE AREA: .026 in2 (16.73 mm2) PRODUCT DESCRIPTION Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of
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VTD31AA
CLD31AA
S1723-04
BPW34 application
VTD34
BPW34
BPW34 application note
SFH206K
BPW34F
SFH205
VTD205
VTD205K
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lensed
Abstract: VTT1222W phototransistor visible light VTT1223W VTT1225 VTT1226 VTT1227 VTT3323LA VTT3324LA VTT3325LA
Text: .025" NPN Phototransistors VTT1222W, 23W Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26W T-1¾ (5 mm) WIDE ANGLE CHIP TYPE: 25T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A small area high speed NPN silicon phototransistor mounted in a 5 mm diameter lensed, end looking,
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VTT1222W,
VTE12xxW
VTT7222
VTT7223
VTT7225
lensed
VTT1222W
phototransistor visible light
VTT1223W
VTT1225
VTT1226
VTT1227
VTT3323LA
VTT3324LA
VTT3325LA
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C2E1
Abstract: N5108 MBM300GS12AW MBN600GS12AW MBM400GR6 mbn1200gr12a 4862G G3E3 Hitachi DSA002734 MBN1200D33A
Text: Date:Mar.2002 Status List M:Mass production KS02007 A:Abolition GR - A Series Advanced GR Series Absolute Maximum Ratings Connection Single Type Characteristics Outline Status 0.4 N-7 M 1.2 0.35 N-6 M 0.7 1.1 0.3 N-5 M 2.2 0.7 1.1 0.3 M- 9 M 1,250 2.2 0.6
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MBN1200GR12A
MBN600GR12A
MBN400GR12A
MBM300GR12A
MBM200GR12A
MBM150GR12A
MBM100GR12A
KS02007
MBM400GR6
MBM300GR6
C2E1
N5108
MBM300GS12AW
MBN600GS12AW
4862G
G3E3
Hitachi DSA002734
MBN1200D33A
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VTT9102
Abstract: VTT1212 VTT1214 VTT9002 VTT9003 VTT9103 opto 101 case to106 transistor To-106 transistor case To 106
Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted
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VTT1212,
VTE12xx
VTT9102
VTT9103
VTT9102
VTT1212
VTT1214
VTT9002
VTT9003
VTT9103
opto 101
case to106
transistor To-106
transistor case To 106
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mbm150gr12
Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics
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MBN1200E17D
MBN1600E17D
MBN1800E17D
KS10004
mbm150gr12
MBN1200D33A
C2E1
MBM300GS12A
5252 F 1002
MDN1200D33
m8nd
mbm200js12ew
MBM800E17D
mbn1200e25c igbt
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SFH205
Abstract: BPW34F VTD205 VTD34F SECOND SOURCE
Text: Alternate Source/ Second Source Photodiodes VTD34F BPW34F INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION Planar silicon photodiode in a molded plastic package. The package material filters out visible light
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VTD34F
BPW34F
SFH205
VTD205
VTD34F
SECOND SOURCE
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VTT1117
Abstract: VTT1015 VTT1016 VTT1017 VTT1115 VTT1116 TO46 package VTE10xx
Text: .050" NPN Phototransistors VTT1015, 16, 17 TO-46 Flat Window Package PACKAGE DIMENSIONS inch mm CASE 1 PRODUCT DESCRIPTION TO-46 (FLAT WINDOW) CHIP TYPE: 50T ABSOLUTE MAXIMUM RATINGS A large area high sensitivity NPN silicon phototransistor in a flat lensed, hermetically sealed, TO-46 package. The
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VTT1015,
VTE10xx
VTT1115
VTT1116
VTT1117
VTT1117
VTT1015
VTT1016
VTT1017
VTT1115
VTT1116
TO46 package
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schematic retro reflective sensor
Abstract: VTR17D1 VTR16D1 sensor acetone opto-switch dark activated lamp switches high sensitivity reflective phototransistor hydrocarbon sensor Reflective Optical Sensor Opto-23
Text: Reflective Optoswitch VTR16D1 Arrow Retro with PCB Mount Leads PRODUCT DESCRIPTION This series of reflective optical switches combines an infrared emitting diode IRED with an NPN phototransistor (VTR16D1) in a one piece, sealed, IR transmitting plastic case.
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VTR16D1
VTR16D1)
VTR17xx
schematic retro reflective sensor
VTR17D1
VTR16D1
sensor acetone
opto-switch
dark activated lamp switches
high sensitivity reflective phototransistor
hydrocarbon sensor
Reflective Optical Sensor
Opto-23
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opto-switch
Abstract: optoswitch VTL13D7-20 vtl23 phototransistor visible light VTL11D1 VTL11D1-20 VTL11D3 VTL11D3-20 VTL11D5-20
Text: Transmissive Optoswitch VTL11D1 - D7 Slotted Switch — 0.395 High PRODUCT DESCRIPTION This series of interrupter type transmissive optoswitches combines an infrared emitting diode IRED with an NPN phototransistor in a one piece, sealed, IR transmitting plastic
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VTL11D1
VTL13
VTL23D3A00
VTL23D1A22
opto-switch
optoswitch
VTL13D7-20
vtl23
phototransistor visible light
VTL11D1-20
VTL11D3
VTL11D3-20
VTL11D5-20
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2SK2911
Abstract: No abstract text available
Text: Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A 0.4 0.16 0 to 0.1 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5
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ENN6313
2SK2911
2SK2911]
2SK2911
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2SK2911
Abstract: TA-2137 63131
Text: Ordering number:ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2091A 0.4 0.16 0 to 0.1 0.8 1.1 1 0.95 0.95 2 1.9 2.9 0.5
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ENN6313
2SK2911
2SK2911]
2SK2911
TA-2137
63131
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4558 opamp
Abstract: 4558 dd 4558 lowpass filter portable dvd player block diagram TDA1311 portable dvd player power supply 4558 dd data portable dvd player f 4558 sunplus* DVD
Text: MS6313 MOSA ELECTRONICS Stereo Audio DAC FEATURES • Excellent Power Supply Rejection Ratio PSRR •Easy application : • • • • • • • Voltage Output Space saving package(SOP8) Low power consumption Low total harmonic distortion Wide dynamic range(16-bit resolution)
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MS6313
16-bit
MS6313
MS6313AS
4558 opamp
4558 dd
4558 lowpass filter
portable dvd player block diagram
TDA1311
portable dvd player power supply
4558 dd data
portable dvd player
f 4558
sunplus* DVD
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S1723-04
Abstract: VTH2090
Text: Alternate Source/ Second Source Photodiodes VTH2090 S1723-04 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE This PIN photodiode consists of a chip with a 9.2 x 9.2
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VTH2090
S1723-04
VTH2090
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VTD205K
Abstract: to-92 type MO-63132 pt 100 to92 SFH205K
Text: VTD205K Alternate Source/ Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear,
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VTD205K
SFH205K
VTD205K
to-92 type
MO-63132
pt 100 to92
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S1723-04
Abstract: VTH2090 S1723 TF65
Text: Alternate Source/ Second Source Photodiodes VTH2090 S1723-04 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) PRODUCT DESCRIPTION CASE 53 BLACK CERAMIC CHIP ACTIVE AREA: .131 in2 (84.64 mm2) SPECTRAL RESPONSE This PIN photodiode consists of a chip with a 9.2 x 9.2
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VTH2090
S1723-04
VTH2090
S1723
TF65
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SFH205
Abstract: VTD205 photodiode 011
Text: Alternate Source/ Second Source Photodiodes VTD205 SFH205 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 60 TO-92 TYPE (ROUND LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a cast epoxy
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VTD205
SFH205
VTD205
photodiode 011
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Untitled
Abstract: No abstract text available
Text: Alternate Source/ Second Source Photodiodes VTD34 BPW34 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 22 MINI DIP CHIP ACTIVE AREA: .012 in2 (7.45 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a transparent molded
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VTD34
BPW34
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VTT1212
Abstract: VTT1214
Text: .040" NPN Phototransistors VTT1212, 1214 Clear T-1¾ 5 mm Plastic Package PACKAGE DIMENSIONS inch (mm) CASE 26 T-1 ¾ (5 mm) CHIP TYPE: 40T PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS A medium area high speed NPN silicon phototransistor possessing excellent sensitivity and good speed mounted
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VTT1212,
VTE12xx
VTT1212
VTT1214
VTT1212
VTT1214
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SFH206
Abstract: VTD206
Text: Alternate Source/ Second Source Photodiodes VTD206 SFH206 INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch (mm) CASE 61 TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) ABSOLUTE MAXIMUM RATINGS PRODUCT DESCRIPTION Large area planar silicon photodiode in a cast epoxy
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VTD206
SFH206
VTD206
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high sensitivity reflective phototransistor
Abstract: photoswitch npn RPS1C Vactec VTR17
Text: RPS1-C JL e B rB RETRO PHOTO-SWITCH vac tec VTR16 VTR17 VTRI/c 0-8.0mm SENSING OPTOELECTRONICS SEALED CASE LED-PHOTOTRANSISTOR 10900 PAGE BI3/D. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 P R O D U C T D E S C R IP T IO N FEATURES • Sealed case—no dust problems due to
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VTR16
VTR17
high sensitivity reflective phototransistor
photoswitch npn
RPS1C
Vactec
VTR17
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Untitled
Abstract: No abstract text available
Text: LED-1 B HIGH POWER GaAs INFRARED EMITTING DIODES 920 nm il OPTOELECTRONICS 1 0 900 PAGE BLVD. ST. LOUIS, M O . 63132 USA PHONE 3 1 4 -4 2 3 -4 9 0 0 TW X 910-764-0811 FEATURES: PRODUCT DESCRIPTION: • Eight standard packages in This series of Infrared emitting diodes {IREDs consists of
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10pps.
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VTT9012
Abstract: VTT9112 VTT1010 VTT9313 Vcn-50V VTT1013 VTT1031 bd 7122 VTA3121 31T52
Text: V TT A -3B VTT PHOTODARLINGTONS VTA c h ip s VTA-C/VTT-C MATCHED LED-TRANSISTORS VTM PHOTOTRANSISTORS J^ E G zG V A C TE C OPTOELECTRONICS 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA • • • TWX 910-764-0811 PRODUCT DESCRIPTION FEATURES • • PHONE 314-423-4900
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82M63
VTT9012
VTT9112
VTT1010
VTT9313
Vcn-50V
VTT1013
VTT1031
bd 7122
VTA3121
31T52
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Untitled
Abstract: No abstract text available
Text: VTD206K Alternate Source/ Second Source Photodiodes SFH206K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch(mm) CASE 61 PRODUCT DESCRIPTION TO-92 TYPE (FLAT LENS) CHIP ACTIVE AREA: .011 in2 (7.41 mm2) Large area planarsilicon photodiode in a waterclear, cast epoxy sidelooker,
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VTD206K
SFH206K
3030fci01
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